BARE DIODE Search Results

Zurich E2

Abstract: b50c laser diode bar Bookham bookham LASER
Contextual Info: Data sheet 50W 806nm High Power Bare Laser Diode Bar B50C-806-01 Features • Bare 10mm x 1.2mm laser bar • 50W operating power • Highly reliable single quantum well MBE structure • Excellent solderability The Bookham Technology B50C-806-01 bare laser bar

B60C-806-01

Abstract: bookham diode 60W
Contextual Info: Data sheet 60W 806nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 60W operating power B60C-806-01 • Highly reliable single quantum well MBE structure The Bookham Technology B60C-806-01 bare laser diode bar series has been designed to provide the

Contextual Info: 120W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 2.4mm laser diode bar • 120W operating power B120C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham B120C-9xx-01 bare laser diode bar series has been designed to provide the increased brightness

B80C

Abstract: bare diode bookham diode
Contextual Info: Data sheet 80W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 80W operating power B80C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham Technology B80C-9xx-01 bare laser diode bar series has been designed to provide the

Selector Guide

Abstract: do-218ab DO218AB
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Bare Die Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Products in Several Versions to Accommodate a Wide Variety of Assembly Techniques and Applications TABLE OF CONTENTS

laser diode bar

Abstract: bookham diode
Contextual Info: Data sheet 40W 806nm 30% Fill Factor High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 30% Fill Factor 150µm emitter / 500µm pitch • 40W operating power B40C-806-01 • Highly reliable single quantum well MBE structure

Contextual Info: DATA SHEET 256M bits SDRAM Bare Chip ECS2532AACN-A 8M words x 32 bits Features • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

Contextual Info: DATA SHEET 256M bits SDRAM Bare Chip ECS2532JECN-A 8M words x 32 bits Features • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)

Contextual Info: DATA SHEET 256M bits SDRAM Bare Chip ECS2532EECN-A 8M words x 32 bits Features • Density: 256M bits • Organization  2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.)

Contextual Info: DATA SHEET 256M bits SDRAM Bare Chip ECS2532CACN-A 8M words x 32 bits Features • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)

Contextual Info: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1216AACN-A 8M words x 16 bits Features • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

Contextual Info: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1216AACN-A 8M words x 16 bits Specifications Features • Density: 128M bits • Organization  2M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

E0743E20

Contextual Info: PRELIMINARY DATA SHEET 64M bits SDRAM Bare Chip ECS6432AFCN-A 2M words x 32 bits Features • Density: 64M bits • Organization  512K words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

Contextual Info: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1232JCCN-A 4M words x 32 bits Features • Density: 128M bits • Organization  1M words × 32 bits × 4 banks  Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)

Contextual Info: DATA SHEET 256M bits SDRAM Bare Chip ECS2532CACN-A 8M words x 32 bits Specifications Features • Density: 256M bits • Organization ⎯ 2M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 2.5V ± 0.2V • Clock frequency: 133MHz (max.)

AX12

Contextual Info: PRELIMINARY DATA SHEET 256M bits SDRAM Bare Chip ECS2516ADCN-A 16M words x 16 bits Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

Contextual Info: PRELIMINARY DATA SHEET 64M bits SDRAM Bare Chip ECS6416AHCN-A 4M words x 16 bits Features • Density: 64M bits • Organization  1M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

Contextual Info: PRELIMINARY DATA SHEET 128M bits SDRAM Bare Chip ECS1232ECCN-A 4M words x 32 bits Features • Density: 128M bits • Organization  1M words × 32 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Clock frequency: 111MHz (max.)

AX12

Contextual Info: PRELIMINARY DATA SHEET 256M bits SDRAM Bare Chip ECS2516AFCN-A 16M words x 16 bits Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

AX12

Contextual Info: PRELIMINARY DATA SHEET 256M bits SDRAM Bare Chip ECS2516ADCN-A 16M words x 16 bits Specifications Features • Density: 256M bits • Organization  4M words × 16 bits × 4 banks • Package: Bare chip • Power supply: VDD, VDDQ = 3.3V ± 0.3V • Clock frequency: 133MHz (max.)

Contextual Info: DATA SHEET 128M bits SDRAM Bare Chip ECS1232ABCN-A 4M words x 32 bits Features The ECS1232ABCN is a 128M bits SDRAM organized as 1,048,576 words × 32 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. This product is Bare Chip.

AN-1061

Abstract: Ultrasonic welding circuit centrifuge machine for acceleration epoxy adhesive paste cte table soft solder die bonding ultrasonic flow meter ultrasonic transducer circuit ultrasonic generator ultrasonic bond Ultrasonic Transducer for gas meter
Contextual Info: Application Note AN-1061 Bare Die: Die Attach and Wire Bonding Guidance for setting up assembly processes By Richard Clark Table of Contents Page Introduction .1 Storage and Handling .2

U-CP-80C0055-preliminary

Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Contextual Info: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

10g DFB

Abstract: dfb 10g dfb laser 1300 nm bare die DFB 1300 rise time laser diode bare chip DFB laser bare die
Contextual Info: PRELIMINARY DATASHEET | MAY 21, 2004 Uncooled 4 Gb/s CWDM DFB Bare Die The 4 Gb/s CWDM DFB laser diode chip is designed to facilitate extended temperature operation. Target applications include LX4 transceivers, SONET OC-48, and SDH STM-16. Performance Highlights