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flammable Abstract: BA01202 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs HBT> Preliminary BAO1202 GaAs HBT HYBRID IC Specifications are subject to change without notice. DESCRIPTION The BA01202 is GaAs RF amplifier designed for N-CDMA PCS hand-held phone. FEATURES Low voltage Vc=3.2V High power Po=28dBm	OCR Scan	BA01202 28dBm 2288Mcps, 25MHz flammable	PDF

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flammable

Abstract: BA01202
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs HBT> Preliminary BAO1202 GaAs HBT HYBRID IC Specifications are subject to change without notice. DESCRIPTION The BA01202 is GaAs RF amplifier designed for N-CDMA PCS hand-held phone. FEATURES Low voltage Vc=3.2V High power Po=28dBm

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BA01202 28dBm 2288Mcps, 25MHz flammable

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