BA-20 DIODE Search Results

BB205

Abstract: BB105 BB209 BB109 Din 5461 BA111 BA121 BB204 BB205 g BB104
Contextual Info: Dioden Capacitance diodes Type Group Fig. Nr. Maximum ratings Characteristics Cd £/r = 3 V CD ( i / R = 3 V ) CD at V CD ( t / R = 25 V) CD (£/r = 30 V) PF ^R V 's at O ^R V BA 111 10 20 - - 4 5 -6 5 2 0.5 2 BA 121 10 30 - - 8 -1 2 2 0.9 2 50 10 30 -

D 71055

Abstract: Si5441DC Si5441DC-T1
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.055 @ VGS = -4.5 V 5.3 0.06 @ VGS = -3.6 V 5.1 0.083 @ VGS = -2.5 V 4.3 -20 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BA XX Lot Traceability

Contextual Info: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW AQ AE K BA Y DETAIL "B" AH Q AM BB Y BB Y BB Y MN BC BB Y W 20 19 AX Y DETAIL "C" 18 17

D 71055

Abstract: Si5441DC MAX 71055 71055
Contextual Info: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX

Contextual Info: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW 45° K AT AE BE K BA BD DETAIL "B" AH Q AM BB Y BB Y BB Y K T MN BC BB Y W 20 19 AX Y DETAIL "C"

Contextual Info: TD TOSHIBA -CDISCRETE/OPTOD- D Ë J T C H 7 B 5 D GG 11,35 Y ö 9 0 97 25 0 T O S HI BA <DISCRETE/OPTO tfosìuba D7 I 3 3 - 3 g 90D 16357 TOSHIBA GTR MODULE SEMICONDUCTOR MG 20 O M 1FK 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.

cc wok

Abstract: Rectifier Tubes Scans-0017343
Contextual Info: IK3 T U N B- SO L - V DIODE COATED 1.25 F ILA M E N T VOLTS 20 0 MA. AC OR DC ANY M OU N TI N G PO S ITIO N CONNECTORS SHOULD NOT EXE RT MORE THAN 7 POUNOS R A D I A L COMPRESSI ON AT ANY P OI N T AROUND THE CI RCUMF E R E NCE OF THE CAP. BOTTOM BA S I N G

25C20

Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
Contextual Info: D at a S h ee t, D S 1, O ct . 20 01 SIUC-BA S in gl e C hi p I S D N U S B Co nt ro ll er - Basic PSB 2155 Version 1.3 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-10-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

BA513

Abstract: BA521 BA517 BA543 BA521 diode BA523 BA531 BA519 BA533 BA544
Contextual Info: Silicijeve planarne signalne diode Silicon planar signal diodes Tip/Type I fav 1100M pri/at pri/at pri/at 1 MHz 25 °C i}*mb—25 °C 25°C Ur Ur=OV : mA " BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546

BA513

Abstract: iskra diode BA523 BA521 BA519 DIODE BA531 BA521 diode BA531 iskra BA533
Contextual Info: ISKRA ELECTRONICS INC SSE D • 4063477 Silicijeve planarne signalne diode Silicon planar signal diodes *'. lien Tip/Type BA 511 BA 513 BA 517 BA 518 BA 519 BA 520 BA 521 BA 523 BA 531 BA 533 BA 543 BA 544 BA 545 BA 546 BA 547 :io o m 1N4148 1N4448 1N4150

28 66 23 9

Contextual Info: Uninterruptible Power Supply Unitfor Universal Use QUINT-DC-UPS/24DC/20 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

phoenix quint ups

Abstract: Uninterruptible power supply
Contextual Info: Uninterruptible Power Supply Unit for Universal Use QUINT-DC-UPS/24DC/40 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

ba682

Abstract: diode marking code 682 BA683 MAF100
Contextual Info: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking

MAF100

Abstract: diode 682 diode marking code 682 BA 682 BA682 DIODE ba 683 BA diode BA683 A723 682 diode
Contextual Info: I - QBE D • • aaaSbQS 0015731 7 M S I E G Silicon PIN Diode» 7"- • - Ô7 - /S BA 682 • BA 683 - SIEMENS AK TI EN G E S E L L S C H A F - Low-loss VHF band switch for TV tuners K o A n Type1 Marking Ordering code for versions in bulk

Contextual Info: Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Type Characteristics (2 a = 25 °C) Maximum Ratings Fr /f V mA CT pF at Fr V VF V Package at r, /F ä mA . a at h mA /r nA at Lead Code r* V • BA 582 35

0515

Abstract: 1N484 BAV17 BAV18 BAV19 BAV20 BAV21 BA 30 C AA132
Contextual Info: Diodes General purpose diodes Type Fig. Nr. Maximum ratings Characteristics Py ^thJA t/p at 'F /R V mA ma h ^m b mW = at mA V °C/W 160 100 25 200) 50 25 10 38 < 120) <400 1.35 ( < 1.8) 10 55 {< <400 1.35 10 70 (< 1 AA 139 ') 1 130 55 150 20 £ 0 .7 5 100

BA102 diode

Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A
Contextual Info: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï

BA150

Contextual Info: FAGOR ^ BA 157 BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-IS Plastic -do •■ si s1 Voltage 400 to 1.000 V. C O eri s Current 1.0 A. at S0°C. 6 .3 5 to.a • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldering point,

BA282

Abstract: marking SA FHA07001 BA diode BA 282 diode ba 147
Contextual Info: SIEMENS BA 282 BA 283 Silicon RF Switching Diodes • For low-loss VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 282 yellow Q62702-A428 DO-35 DHD Q62702-A429 BA 283 ¿ - K] o FHA07001 Maximum Ratings

a952

Abstract: Q62702-A952 6 ba diode EHA070
Contextual Info: BA 595 Silicon PIN Diode 2 • Current-controlled RF resistor 1 for RF attenuators • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners VPS05176 1 2 EHA07001 Type Marking Ordering Code Pin Configuration Package BA 595

BA150

Abstract: BA157-BA159 BA158
Contextual Info: BA 157.BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-15 Plastic Voltage 400 to 1000 V. Current 1.0 A. at 50°C. 6.35 ± 0.2 58.5 min. • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

BA150

Abstract: BA157-BA159 ba158 diode BA 159
Contextual Info: BA 157.BA 159 1 Amp. Fast Recovery Silicon Diodes Dimensions in mm. DO-15 Plastic Voltage 400 to 1000 V. Current 1.0 A. at 50°C. 6.35 ± 0.2 58.5 min. • Fast Recovery Diodes Mounting instructions 1. Min. distance from body to soldering point, 4 mm.

BZX88C15

Abstract: BZX88-C11 diode l2 32 diode BAW65 f021 Z6 DIODE 2N929 2N930 BAW63 BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W h ere approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors T yp e Device marking Nearest m etal can or IE-line equivalent B .S . num ber* Page

BA163

Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
Contextual Info: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre­ quency range in short-wave, medium-wave, and long-w ave circu its Type