BA-20 DIODE Search Results

BB205

Abstract: BB105 BB209 BB109 Din 5461 BA111 BA121 BB204 BB205 g BB104
Contextual Info: Dioden Capacitance diodes Type Group Fig. Nr. Maximum ratings Characteristics Cd £/r = 3 V CD ( i / R = 3 V ) CD at V CD ( t / R = 25 V) CD (£/r = 30 V) PF ^R V 's at O ^R V BA 111 10 20 - - 4 5 -6 5 2 0.5 2 BA 121 10 30 - - 8 -1 2 2 0.9 2 50 10 30 -

D 71055

Abstract: Si5441DC MAX 71055 71055
Contextual Info: Si5441DC New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "5.3 0.06 @ VGS = –3.6 V "5.1 0.083 @ VGS = –2.5 V "4.3 –20 20 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BA XX

Contextual Info: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW 45° K AT AE BE K BA BD DETAIL "B" AH Q AM BB Y BB Y BB Y K T MN BC BB Y W 20 19 AX Y DETAIL "C"

ba682

Abstract: diode marking code 682 BA683 MAF100
Contextual Info: I : übe t> : m aaasbos 0 0 1 5 7 3 1 • • ? « s ie g - 7 " - Ô 7 - /5 " Silicon PIN Diodes BA 682 .BA 683 - SIEMENS AKTIENGESELLSCHAF -• Low-loss VHF band switch for TV tuners K A Type1 Marking

BA102 diode

Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A
Contextual Info: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï

fagor ba 159

Contextual Info: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s Dimensions in mm. D O-15 F - 126 58 A 2 Plastic Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,

ba capacitance diode

Abstract: t7 aeg DIODE T7 marking BA262 0588 ir 0588 BA282 BA283 marking aeg diode aeg
Contextual Info: A E G CORP 17E D 00Ei42b 000*1717 b> • BA 282 •BA 283 TBULIIFQJlOÄillM electron ic Crea liv e T echnologies Silicon Planar Diodes A p p lica tio n ; Band sw itching in VHF-tuners D im en sio n s in m m Standard glass case 5 4 A 2 DIN 41 8 8 0 JED EC DO 35

Contextual Info: Uninterruptible Power Supply Unit for Universal Use QUINT-DC-UPS/24DC/10 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

ba 243 rf

Abstract: BA244 BA243 diode 244 ba capacitance diode ba rf JEDEC to 243
Contextual Info: «H» BA 243 •BA 244 'W Silizium-Planar-Dioden Silicon planar diodes Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Besondere Merkmale: Features: • Niedriger differentieller Durchlaßwiderstand im VHF-Bereich • Low differential forward resistance in

diode aa113

Abstract: germanium rectifier diode Germanium rectifier BA diode diode aa 90 diode ba 104 germanium-diodes germanium "RF diode" silicon diode and germanium
Contextual Info: Inventory o f discrete standard Types 9.2. Germanium-diodes Type Application AA 113 1 HF-diode Reverse voltage Forward voltage l/F at / F = 10 mA Reverse current /„ at l/R= 1 0 V V) (V) (HA) 60 20 1.1 (< 1.6) 12 A A 1 1 6 1) HF-dicide <1 .0 20 AA 117 A A 1 1 8 1)

BA 30 C

Contextual Info: BA 597 Silicon PIN Diode • RF switch, RF attenuator for frequencies 2 above 10 MHz 1 • Very low IM distortion VPS05176 Type Marking Pin Configuration Package BA 597 A 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR

mss60

Abstract: Metelics MSS60-841-E45 MSS60,444-E45 B10B b20 diode 448-E45 848-B80
Contextual Info: MSS60,000 Series Extra High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS60,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

zener diode marking E7

Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74

MSS30

Abstract: b20 diode MSS-30 248-H30 442-E4
Contextual Info: MSS30,000 Series Low Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

FMMD6050

Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
Contextual Info: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film

colour code diode zener

Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
Contextual Info: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid

05Z5.1

Abstract: irf 1820 Irf 1540 N 05Z5.6 05Z12Y 05Z6.2 05Z12 05Z16 05Z6.8 05Z5.6Y
Contextual Info: b7 TOSHIBA { DI SCRET E/ OP TO } 9097250 T O SH I BA dF D IS C R E TE/OPTO > 05Z5.1 -05Z24 I tchtesd 67C 09277 .* oocna? a 1 ~ 0 T ' / / ‘// • Silicon Planar Type Zener Diode Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.

BY407A

Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
Contextual Info: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C

Contextual Info: SKKD 380 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules SKKD 380 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= > ?@ A@B

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

DIODE BA243

Abstract: BA243 BA243 diode 0588 JEDEC to 243 diode 244 BA244
Contextual Info: A E G CORP 17E QQETMab o o o ' m s D & 2 • BA 243 •BA 244 TjTSLGiiFüfllîiBSIMelectronic Creative Techno'ogres Silicon Planar Diodes A p p lica tio n s: Band selector in VHF-tuners Features: • Low differential forward resistance in VHF-range Low diode capacitance

thermistor 102 ntc

Abstract: RESISTOR SIL 102 5 PIN
Contextual Info: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0980-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case

Contextual Info: SIEMENS Silicon PIN Diode BA 586 Preliminary Data • Current-controlled RF resistor for switching and attenuating applications. • Frequency range above 1 MHz • Designed for low IM distortion Type Marking Ordering Code tape and reel BA 586 white P Q62702-A930

MGS903

Abstract: GC210
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices