BA 8817 Search Results

Contextual Info: DC/DC Converters International Power Sources, Inc. 200 Butterfield Drive Ashland, Massachusetts 01721 Tel. 508 881-7434 Fax (800) 226-2100 BA/BC Series: 1.5 - 6.0 Watts Single and Dual Outputs FEATURES • Input % Filter • 5, 12, 24, 28, and 48 VDC Inputs

7614-6002SC

Abstract: CE08S-12P CE08S-25P DBU-25PF-F0 DBLC-J25SAF CKE 8002 DBLC-J25SAF-20L9 FR11B MB3771 3.3V 8931E-100-178S
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

TBGA64

Abstract: TSOP56 Package Tape J-STD-020B M30LW128D M58LW064D TSOP56
Contextual Info: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE WIDE x8 or x16 DATA BUS for HIGH

M30LW128D

Abstract: M58LW064D TSOP56 TSOP56 Package Tape 56-Lead TSOP Package
Contextual Info: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■

M30LW128D

Abstract: M58LW064D TSOP56
Contextual Info: M30LW128D 128 Mbit two 64Mbit, x8/x16, Uniform Block, Flash Memories 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • TWO M58LW064D 64Mbit FLASH MEMORIES STACKED IN A SINGLE PACKAGE ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■

PC28F128P30BF65

Abstract: PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF js28f640 js28f128p30tf PC28F640 JS28F128P30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode

JS28F256P30

Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
Contextual Info: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

JS28F256P30

Abstract: JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

PC28F256P30T85

Abstract: JS28F256P30T95 RC48F4400P0VB00 PC28F640P30T85 JS28F256P30B95 RC28F640P30B85 JS28F256P30 RC28F256P30T85 PC28F640P30B85 306667
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

JS28F256P30T95

Abstract: JS28F256P30B95 PC28F256P30T85 306667 RC48F4400P0VB00 JS28F256P30 JS28F128P30B85 js48f4400p0vb00 PC28F128P30T85 PC28F640P30T85
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

BCW61 series

Abstract: Transistors bd 133 BCW60 BCW60A BCW60B BCW60C BCW61 BCW61A BCW61B BCW61C
Contextual Info: BCW61 Series Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 0.031 (0.8) Pin Configuration 1. Base 2. Emitter

Contextual Info: M58LW064D 64 Mbit 8Mb x8, 4Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

RC48F4400P0VB00

Abstract: RD48F4400P0VTQ0 strataflash 512 p30 JS28F256P30T85 JS28F128P JS28F640P30B85 PC28F256P30T85 JS28F256P30 RC28F256P30B85 JS28F640P30T85
Contextual Info: Intel StrataFlash Embedded Memory P30 1-Gbit P30 Family Datasheet Product Features • High performance ■ Security — 85/88 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits

strataflash 512 p30

Abstract: RC48F4400P0VB00 Migration Guide for Intel StrataFlash Memory J 3066* intel PF48F4400P0VTQ0
Contextual Info: Intel StrataFlash Embedded Memory P30 Family Datasheet Product Features High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

strataflash 512 p30

Abstract: Migration Guide for Intel StrataFlash Memory J 3066* intel
Contextual Info: Intel StrataFlash Embedded Memory P30 Family Datasheet Product Features High performance • Security — 85 ns initial access — One-Time Programmable Registers: • 64 unique factory device identifier bits — 40 MHz with zero wait states, 20 ns clock-to• 64 user-programmable OTP bits

transistor BC-108

Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
Contextual Info: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab

A985A

Contextual Info: V826632M24SC 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in FBGA Packages ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: V826632M24SC 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in FBGA Packages ■ Single +2.5V ± 0.2V Power Supply

a985a

Contextual Info: V826632M24SC 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in FBGA Packages ■ Single +2.5V ± 0.2V Power Supply

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

Contextual Info: SN74AHCT1G00 SINGLE 2-INPUT POSITIVE-NAND GATE SCLS316M – MARCH 1996 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 7.1 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

Contextual Info: SN74AHCT1G00 SINGLE 2-INPUT POSITIVE-NAND GATE SCLS316M – MARCH 1996 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 7.1 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

M6800 programming manual

Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS
Contextual Info: MOTOROLA M 6800 Microprocessor Appi i cat i ons Manual B e n c h m a r k F a m ily F o r M ic r o c o m p u t e r S y s te m s I I I tlß i by C om puter A p p lic a tio n s Engineering M OTOROLA S e m ic o n d u c to r Products Inc. M6800 APPLICATION MANUAL

BCM 4709

Abstract: Ericsson 2116 IC 4822 automaten
Contextual Info: ID Nr. ServiceProvider 0004 - card administration SystemIntegrator Location Rosan Finance Sectors Launching Date Application sector 13 and 14 2 01.05.2002 sector 15 1 01.05.2002 1 01.05.2002 card holders Rosan Finance personal data Card ID: ISO No., Rosan Finance