BA 75 IS Search Results

4154 diode

Abstract: BAW75 R-1 GREEN CATHODE diode
Contextual Info: BAW75 Silicon planar logical diode BA W 75 is a silicon planar diode in "double heat sink" technique in a case 56 A 2 DIN 41 883 D O -35 . The cathode is marked by a green colour ring. BAW 75 is particularly suitable for use as high-speed switch in computers as well as for general

V23614-A102-A57

Abstract: C42334-A285 V23600-A1027-C1 C4233 V23614-A602 V23600A1027C1
Contextual Info: Coaxial Connectors Series 1,0/2,3 S e rie s 1,0/2,3 50 a an d 75 Q 1 he se connectors com ply with C E C C 22230. T he connectors for 75 f l are suitable for operation up to 2 G H z. The design is ba se d on the pin-and-socket principle, i.e. the inner and outer conductors

rg59 connector

Contextual Info: Lead BNC to BNC Specifications Cable Type Coaxial Cable Type RG59 OFC RG59 Connector Type A Connector Type B BNC Plug BNC Plug Page <1> Impedance R Lead Length (m) Part Number 75 1.5 BA-BVL6002 16/05/08 V1.0 Lead BNC to BNC Notes: International Sales Offices:

Contextual Info: CM75RX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT + Brake NX-Series Module 75 Amperes/1700 Volts AV AU AW 45° K AT AE BE K BA BD DETAIL "B" AH Q AM BB Y BB Y BB Y K T MN BC BB Y W 20 19 AX Y DETAIL "C"

Contextual Info: BNC Series PANEL PLUG mounting detail Straight /-A H oles t dia fixing hole sizes see part number M 2 .5 x 0 .4 5 — 6H=D 3.56 UNF=E 4.40 UNC=F 6 BA=G 3.0mm=H 2.8mm=K 17.5 square Part Number Impedance 50 ohm B35 C86 • 999 t99 75 ohm B37 C86 • 999 f9 9

250v t855e4

Abstract: ADK1807 YA-2RB19-A64 ADK1
Contextual Info: < >I slCM O ro m icro swtt <t a Honeywell Division FED .M F B .CO D E CATALOG L I S T I N G YA-2RB19-A64 ADK1807 SWITCH - BA SIC 9 1 9 2 9 X .75 ±.01 CD < i ST AIN LESS STEEL PLUNGER 2 m 01 n CNJ O 1.03 ±-02 OPERATING POSITION >Lü O < jar.|40t-SS? A CO

T126

Contextual Info: CAtALOGUE LISTING Dü œ o d œ s t c m b V5B120DB TCH-BA OO ±0 .I 3.3 ±0. I5 6.35 Û i Q 0.3 O 4 . 75 T" in + 0.2 - 0.0 0 \ .4 HOLE IN T E R M I N A L S 2 L±J <J < _l û_ ÜJ OC ±0.25 20.2 PRETRAVEL h* 0) + 0 . IO 03. I -0.05 CD MSo: iii *55 <5 c\j

MP7523KN

Abstract: 7523a
Contextual Info: M P 7 5 23 /X R D 75 2 3 15 V CM O S M ultiplying 8-Bit Digital-to-Analog C onverter .the analog plus com pany VJSSSFÆ ÊFâ January 1996-2 FEATURES APPLICATIONS Full F o u r - Q u a d r a n t Mul t i pl yi ng Low Feedthrough: F as t Settling: Ba t t e r y O p e ra t e d E q u i p m e n t

8 channel RF transmitter and Receiver circuit for RC airplane

Abstract: BA rx transistor T45 to DB9 DL0054 toshiba rdram
Contextual Info: TC59RM716 8 MB/RB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications

MH32D64KQH-75

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32D64KQH-75,-10 2,147,483,648-BIT 33,554,432-WORD BY 64-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH32D64KQH is 33554432 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

MH32D72AKLA-10

Abstract: MH32D72AKLA-75
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32D72AKLA-10,-75 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH32D72AKLA is 33554432 - word x 72-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

MH64D72KLG-10

Abstract: MH64D72KLG-75
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64D72KLG-75,-10 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH64D72KLG is 67108864 - word x 72-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

MH32D72AKTA-10

Abstract: MH32D72AKTA-75
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32D72AKTA-10,-75 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH32D72AKTA is 33554432 - word x 72-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

MH64D72KTG-10

Abstract: MH64D72KTG-75
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64D72KTG-75,-10 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH64D72KTG is 67108864 - word x 72-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

L8 Package

Contextual Info: IS43R32800B 256 Mb Double Data Rate Synchronous DRAM PRELIMINARY INFORMATION FEBRUARY 2008 DESCRIPTION IS43R32800B is a 4-bank x 2,097,152-word x 32bit double data rate synchronous DR AM , with SST L_ 2 interface. A ll control and address signals are referenced to the rising edgeof CL K. Input

tsop-ii 66 PIN

Abstract: zentel a3s56d30
Contextual Info: IS43R83200B IS43R16160B PRELIMINARY INFORMATION APRIL 2007 FEATURES: DESCRIPTION: -Vdd=Vddq=2.5V+0.2V -6, -75 -Vdd=Vddq=2.6V+0.1V (-5) -Double data rate architecture ; two data transfers per clock cycle. -Bidirectional , data strobe(DQS) is transmitted/received

MH16D64AKQC-75

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16D64AKQC-75,-10 1,073,741,824-BIT 16,777,216-WORD BY 64-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH16D64AKQC is 16777216 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

MH64D64AKQH-75

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64D64AKQH-75,-10 4,294,967,296-BIT 67,108,864-WORD BY 64-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH64D64AKQH is 67108864 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

is43r16160b-6tli

Abstract: is43r16160b
Contextual Info: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data

MH16D72AKLB-10

Abstract: MH16D72AKLB-75
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16D72AKLB-10,75 1,207.959,552-BIT 16,777,216-WORD BY 72-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH16D72AKLB is 16777216 - word x 72-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

MH32D64AKQJ-75

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32D64AKQJ-75,-10 2,147,483,684-BIT 33,554,432-WORD BY 64-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH32D64AKQJ is 33554432 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

Contextual Info: EM48BM1684LBC Revision History Revision 0.1 Jun. 2012 First release. www.eorex.com Jun. 2012 1/20 EM48BM1684LBC 512Mb (8Mx4Bank×16) Mobile Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge The EM48BM1684LBC is Mobile Synchronous

MH8D64AKQC-75

Abstract: MIT-DS-0419-0
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH8D64AKQC-75,-10 536,870,912-BIT 8,388,608-WORD BY 64-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH8D64AKQC is 8388608 - word x 64-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

Contextual Info: MITSUBISHI ASTTLs M74AS620P ^ V.V- - OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUT INVERTED DESCRIPTION The M74AS620P is a semiconductor integrated circuit consisting of eight bus transmitter/receiver circuits with 3-state inverted outputs. PIN CONFIGURATION (TOP VIEW)