BA 7321 Search Results

73001AB

Abstract: rtt 10 foxboro foxboro 931 foxboro control valve drum ic cxa 2165 sis 486 LK15 75XXX-XX cdb 4121 e
Contextual Info: 73001BA-02 FOX 1 Hardware System Overview and Reference Manual VOLUME 2 COMPUTER REFERENCE MANUAL tOXBORO FOX 1 USER DOCUMENTATION 73001AA 73001AB 73001EA 73001EB 73001EC 73001 BA-02 Hardware System Overview and Reference Manual VOLUME 2 COMPUTER REFERENCE MANUAL

A13B1

Contextual Info: 1 1234455678 96ABCADEFCC1C3C66C 1 131C7BA1C C C C C C C 13C9A1C 1 CDE33AAF1116511C11551 !61"F#$11#%71 1 #&11&11C12&6!'&1 ' !1!155(1&&11 !51 !61'51!*11)!571#&51C1! 137E+,11(151'51 1

Contextual Info: FAST CMOS OCTAL REGISTER TRANSCEIVER WITH PARITY Integrated Device Technology, Inc* FEATURES PRELIMINARY IDT73210/A/B IDT73211/A/B 73210/211 Single-level pipeline register from Port A to Port B 73210 Two level pipeline register from Port B to Port A 73211 Single level pipeline register from Port B to Port A

DP3SZ128512X16NY5

Abstract: SA10 SA11 SA12 SA13 Dense-Pac Microsystems
Contextual Info: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of

D0000H-DFFFFH

Contextual Info: 2Meg SRAM/8Meg FLASH, 70ns, TSOP STACK 30A193-00 C 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION DESCRIPTION: The DP3SZ128512X16NY5 modules are a revolutionary new memory subsystem using Dense-Pac Microsystems’ TSOP stacking technology. The Module packs 2-Megabits of

Contextual Info: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g

8a12

Contextual Info: DENSE-PAC MICROSYSTEMS 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 ADVANCED INFORMATION D ESC R IPT IO N : T h e D P 3 S Z 1 2851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry n e w m em o ry subsystem using D e n s e - P a c M ic r o s y s t e m s ' T S O P s ta c k in g

TBA 931

Abstract: me 555 DP3SZ128512X16NY5 SA10 A1020A-2 sa2011 sa2111
Contextual Info: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH D P3SZ12 8 5 1 2 X 1 6N Y 5 MICROSYSTEMS A D VA N C ED IN FO R M A TIO N D E S C R IP T IO N : P IN -O U T D IA G R A M The D P3SZ12851 2X1 6N Y 5 m o d u le s are a re vo lu tio n a ry new m em ory subsystem using

IRF7521D1

Abstract: ba 7321
Contextual Info: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A

IRF7506

Abstract: marking code EA SMD MOSFET
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching

IRF7524D1

Contextual Info: PD -91648B IRF7524D1 PRELIMINARY FETKYTM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V

IRF7506

Contextual Info: PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2

IRF7311

Abstract: IRF7101 DIODE smd marking 82a
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1435 IRF7311 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

IRF7101

Abstract: IRF7421D1 diode schottky 117c
Contextual Info: PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode 1 8 2 7 3 6 4 5 A A D VDSS = 30V D

DB95

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 A123456789AABCDCEFCAFBAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A AAAAAAAA A A CA5E 3CD1AEA89 F !"#$%A89A&' 5 *A'BA1EEA !"ACCDCB A(+63&,6A(&+A A

Contextual Info: DENSE-PAC 256 Megabit CMOS DRAM w/ Parity DPD8MX36RKY5 VI i C R O S Y S I’ K M s PRELIMINARY DESCRIPTION: The DPD8MX36RKY5 is the 8 Meg x 36 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of four 4 Meg x 16 and

73216-0870

Contextual Info: 13 12 10 17.45 1A M A T E R IA L S A N D FIN IS H E S D E C B O D Y: S T A IN L E S S S T E E L PLATED GOLD C O N T A C T : B E R Y L LIU M C O PPER PLATED GOLD IN S U L A T O R : T E F L O N P R E S S RING: B R A S S PLATED GOLD. 3.18 REF 0 ^ 2 5 REF 4 PLACES

dpsd3

Contextual Info: DENSE-PAC / H - 'D éhshs M I C R O S Y S T Ii M S 128 Megabit Synchronous DRAM DPSD32MX4RY5 High Density Memory Device DESCRIPTION: The /H -D tttsus series is a family of interchangeable memory modules. The 128 Megabit SD R A M is a member of this family which utilizes the new and innovative space

IRF7501

Contextual Info: PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2

smd diode S6 66a

Abstract: REGULATOR SMD MARKING CODE ASC
Contextual Info: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

ir*526

Abstract: HEXFET SO-8 IRF7526D1
Contextual Info: PD -91649B IRF7526D1 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -30V

Contextual Info: DENSE-PAC 1024 Megabit CMOS DRAM DP3ED32MX32RW VI i ' R O S Y S I H M S PRELIMINARY DESCRIPTION: The DP3ED32MX32RW is the 32 Meg x 32 Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed of sixteen 16M x 4 dynamic RAM surface mounted on an industry standard 72-pin

IRF7504

Abstract: rce marking
Contextual Info: PD - 9.1267G IRF7504 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2 VDSS = -20V

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A