BA 508 IC Search Results

WED9LAPC2B16P8BC

Abstract: WED9LAPC2C16V4BC WED9LAPC2C16V4BI
Contextual Info: WED9LAPC2C16V4BC 512K x 32 SSRAM / 512K x 64 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller F E AT U R E S DESCRIPTION n Clock speeds: • SSRAM: 100 MHz • SDRAM: 100 MHz The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous DRAM array

Contextual Info: WED9LAPC2C16V4BC 512K x 32 SSRAM / 512K x 64 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION n Clock speeds: • SSRAM: 100 MHz • SDRAM: 100 MHz The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous DRAM array

BA 508

Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC WED9LAPC3C16V8BI
Contextual Info: WED9LAPC3C16V8BC 512K x 32 SSR AM / 1M x 64 SDR AM SSRAM SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT ’S LUCT APC640 A TM PORT CONTROLLER LUCENT’S LUCTAPC640 ATM FEATURES DESCRIPTION n Clock speeds: The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous DRAM array packaged in a 21mm x 21mm 192 lead BGA.

WED9LAPC2C16V8BC

Abstract: WED9LAPC2C16V8BI
Contextual Info: WED9LAPC2C16V8BC 512K x 32 SSR AM / 1M x 64 SDR AM SSRAM SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT ’S LUCT APC640 A TM PORT CONTROLLER LUCENT’S LUCTAPC640 ATM FEATURES DESCRIPTION n Clock speeds: The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous DRAM

WED3DL644V

Abstract: apa0
Contextual Info: WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION n n n n n n The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by 22mm, BGA.

Contextual Info: WED416S16030C 4M x 16 Bits x 4 Banks Synchronous DRAM PRELIMINARY* FEATURES DESCRIPTION n Single 3.3V power supply The WED416S16030C is 268,435,456 bits of synchronous high data rate DRAM organized as 4 x 4,196,304 words x 16 bits. Synchronous design allows precise

TAPC640

Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC
Contextual Info: WED9LAPC2B16P8BC 4M x 32 SDR AM / 2M x 8 SDR AM SDRAM SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TTAPC640 APC640 A TM PORT CONTROLLER ATM DESCRIPTION FEATURES n Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in

Contextual Info: WED9LC6416V 128Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous

Electronic Designs

Abstract: WHITE ELECTRONIC DESIGNS WED3DL644V
Contextual Info: WED3DL644V White Electronic Designs 4Mx64 SDRAM FEATURES DESCRIPTION n n n n n n The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm

EDI9LC644V

Abstract: TMS320C6000 TMS320C6201 TMS320C6701
Contextual Info: EDI9LC644V EDI9LC644AV 128Kx32 SSRAM/1Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The EDI9LC644VxxBC is a 3.3V, 128K x 32 Synchronous Pipeline

Contextual Info: WED9LAPC3C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION n Clock speeds: The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous DRAM array packaged in a 21mm x 21mm 192 lead BGA.

Contextual Info: WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SDRAM: 100 MHz The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in a

WED9LAPC2B16P8BC

Abstract: WED9LAPC2C16V4BC
Contextual Info: WED9LAPC2C16V4BC 512K x 32 SSRAM / 512K x 64 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SSRAM: 100 MHz • SDRAM: 100 MHz The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous DRAM array

ED07

Abstract: ED16-23 TMS320C671
Contextual Info: WED3DL328V 8Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and

ED16-23

Abstract: TMS320C TMS320C6000 WED3DL328V
Contextual Info: WED3DL328V 8Mx32 SDRAM PRELIMINARY FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and

EDI416S4030A

Contextual Info: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

WED416S8030A

Contextual Info: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

TMS320C6000

Abstract: TMS320C6201 TMS320C6701 WED9LC6816V 4Mx32 BGA
Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline

TMS320C6000

Abstract: TMS320C6201 TMS320C6701 WED9LC6416V
Contextual Info: WED9LC6416V 128Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous

TMS320C6000

Abstract: TMS320C6201 TMS320C6701 WED9LC6416V
Contextual Info: WED9LC6416V White Electronic Designs 128Kx32 SSRAM/4Mx32 SDRAM EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP FEATURES DESCRIPTION n The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous Pipeline SRAM and a 4M x 32 Synchronous DRAM array constructed with one 128K x 32 SSRAM and two 4M x 16

SDA10

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline

Contextual Info: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

Contextual Info: WED416S16030A White Electronic Designs 4M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S16030A is 268,435,456 bits of synchronous high data rate DRAM organized as 4 x 4,196,304 words x 16 bits. Synchronous design allows precise

EDI416S4030A

Contextual Info: EDI416S4030A White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION n n n n n The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with