BA 37 931 Search Results

bb 36 931

Abstract: BB36931 ba741 BH 37 933 ba 37 931 BH37931 BB36-931 BD37933 BH 36 933 BB39931
Contextual Info: moulded bridges o ponts moulés THOMSON-CSF Vr = Types 15A 141 8 A ,1 BY BA BB BD BF BH 26 26 26 26 26 26 933 933 933 933 933 933 BY 38 BA 38 BB 38 BD 38 BF 38 BH 38 10A‘1» BY BA BB BD BF BH 36 36 36 36 36 36 933 933 933 933 933 933 15A 1> 931 931 931

facon bh 37 741

Abstract: facon bh 37 931 facon bh 37741931 facon bf BF37742 BF37741931 facon bd 37 facon diode BA37-742931 facon bd
Contextual Info: ON 4SE ]> m 3H5b203 D O D O O H 2 • FCN FAÇON SEMICCMVDUCTEURS/SEMICOIVDUCTORS ~T-23 -0 7 half controlled single phase moulded bridges 12 A to 25 A ponts monophasés moulés mixtes 12 A à 25 A VRRM Types V V RMS re c o m ­ m ended m ax ■d on re ­

Facon BH 37 933

Abstract: facon bh 39933 BD 37 931 s Facon Bb 37 933 facon bh 37 741 BH 37 933 facon bd 39933 bb 36 931 bj 39933 BB36931
Contextual Info: FACON 4SE T> m 3MSbED3 ODDOGOb T B iF C N 2 3 -O FACON SEMICONDUCTEURS/SEMECONDUCTORS single phase moulded bridges 0,8 Amp to 1,5 Amp ponts m on op h asés m oulés 0,8 Amp à 1,5 Amp V RRM Typos <V V RMS rec o m ­ m ended m ax >d on re ­ s is tiv e lo a d

bb36931

Abstract: bb 36 931 BB36-931 BD37931 BA36931 ba 37 931 bb37931 BH 37 931 BA37931 BA 204115
Contextual Info: PONTS MONOPHASES MOULES , moulded single phase bridges^ Vr = correspondances européennes v eff >d recomman­ surcharge résistive dée VrrM TYPES VI 0,6 A 110 110 110 110 110 110 à t connexions = 50°C A05 A 1 A 2 A 4 A 6 A 8 1,5 A 110 110 110 110 110 110

77C3

Abstract: A/2Y0A21 F 73
Contextual Info: 12345678 95A4BCDEF 8 1 8B6B7 6!B8"345!B8C#!5B8 $B28E%B8 1 1 &D#' 8 234536675341 89ABC61 1 2123456547859AB1 4356789ABCD3EF887CA323 43788F73673E3 1 2CDB9EF8375F785AB1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 3

facon bf 39933

Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
Contextual Info: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom ­ mended max id on re­ sistive load

tm 1621

Abstract: BD 811 BT3904 MBD6050 BF5484 2sa 2222a BTA 36 BF5457 1s2836 5T2907A
Contextual Info: C r o s s R e f e r e n c e Guide to M ini M old D e v ic e M o t o r o la NEC N o te M o t o r o la NEC N o te E u rop ean NEC None M M BT6429 N one B A T 18 2 S A 8 12 M M .B T A 0 5 N one BA V 70 152838 2 S A 8 12 M M BTA 06 None BA V 99 1SS123 ¿SA M M B A 8 LI

256MX4

Abstract: ddr3 4gb ddp
Contextual Info: NT2GC72B89B0NJ/NT2GC72C89B0NJ 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 / 16GB: 2G x 72 PC3-8500 / PC3-10600 Registered DDR3 SDRAM DIMM

nickel bh curve

Contextual Info: Permanent Magnets DDMagic シリーズ 重希土類元素拡散 Heavy Rare-Earth Elements Diffusion Technology DDMagic® 重希土類元素拡散技術による高性能化 Higher performance by heavy rare-earth elements diffusion technology Dy Diffusion Series - DDMagic®

74LVT16543A

Abstract: 8C12 8EN10
Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit registered transceiver 3-State 74LVT16543A FEATURES DESCRIPTION • 16-bit universal bus interface The 74LVT16543A is a high-perform ance BiCMOS product designed for V qc operation at 3.3V. The device can be used as two

Contextual Info: SGS-THOMSON * 5 7 E lL iO T * ! M 74H C 648 HC646 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE HC648 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE, INV.) HIGH SPEED = 73 MHz (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Icc = 4 |iA (MAX.) AT Ta = 25 ’ C HIGH NOISE IMMUNITY

Contextual Info: SGS-THOMSON M74HC646 M74HC648 fâl BÈ! I[Lg(Ef^©M[(BS HC646 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE HC648 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE, INV.) • HIGHSPEED fMAX = 73 MHz (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 |xA (MAX.) AT Ta = 25 "C

Contextual Info: 12345678 95A4B8 CDEF  1 8B6B76 B8!345 B8CD 728"A3 B78E#B8 1 1 $DD%&8 234536675341 89ABC61 1 2123456547859AB1 4356789AB3C8DEF357673EF323 43CEFFBE36E33 1 2CDB9EF8375F785AB1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

A549

Contextual Info: 12345678 95A4BCDEF 8 8 1 8B6B7 6!B8"345!B8 1 1 #D$%8 234536675341 89ABC61 1 2123456547859AB1 4356789AB3C8DEF357673EF33 43CEFFBE36E33 1 2CDB9EF8375F785AB1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

Contextual Info: 123456789AB812345674CD8 EFF817E7 1234546789A8BCD6E2F8 254728E8B8DA8  F3 !" F#$%13&9D7'936B62 3F71 3 !" 3

74ABT161543

Abstract: 74ABT16543 74ABTH16543
Contextual Info: Philips Sem iconductors Product specification 16-bit latched transceivers with dual enable 3-State 74ABT16543 74ABTH16543 FEATURES DESCRIPTION • Two 8-bit octal transceivers with D-type latch The 74ABT16543 high-perform ance BiCMOS device com bines low

74LVT16543A

Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit registered transceiver 3-State 74LVT16543A FEATURES DESCRIPTION e e e • e e The 74LVT16543A is a high-performance BICMOS product designed for Vcc operation at 3.3V. The device can be used as two

MK31VT464-10YE

Contextual Info: MK31VT464-10YE 98.07.24 Semiconductor MK31VT464-10YE 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): DESCRIPTION The Oki MK31VT464-10YE is a fully decoded, 4,194,304 x 64bit synchronous dynamic random access memory composed of four 64Mb DRAMs (4Mx16) in TSOP packages

MK31VT864-10YE

Abstract: VSS122 ba146
Contextual Info: MK31VT864-10YE 98.09.03 Semiconductor MK31VT864-10YE 8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK): DESCRIPTION The Oki MK31VT864-10YE is a fully decoded, 8,388,608 x 64bit synchronous dynamic random access memory composed of eight 64Mb DRAMs (8Mx8) in TSOP packages

A818

Contextual Info: MK31VT832-1OYC 98.09.03 Semiconductor M K 3 1 V T 8 3 2 -1 0 Y C 8,388,608 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK):_ DESCRIPTION The Oki MK31VT832-10YC is a fully decoded, 8,388,608 x 32bit synchronous dynamic random access memory composed of four 64Mb DRAMs (8Mx8) in TSOP packages

Contextual Info: MK31VT432-10YC 98.07.21 Semiconductor M K 3 1 V T 4 3 2 - 1 0 Y C 4,194,304 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1 BANK): DESCRIPTION The Oki MK31VT432-10YC is a fully decoded, 4,194,304 x 32bit synchronous dynamic random access memory composed of two 64Mb DRAMs (4Mx16) in TSOP packages

MK32VT1632-10YC

Contextual Info: MK32VT1632-10YC 98.09.03 Semiconductor MK32VT1632-10YC 16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MK32VT1632-10YC is a fully decoded, 16,777,216 x 32bit synchronous dynamic random access memory composed of eight 64Mb DRAMs (8Mx8) in TSOP

MK31VT432-10YC

Abstract: MK31VT432
Contextual Info: Ñ Ò MK31VT432-10YC 98.07.21 Semiconductor MK31VT432-10YC 4,194,304 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE 1BANK : DESCRIPTION The Oki MK31VT432-10YC is a fully decoded, 4,194,304 x 32bit synchronous dynamic random access memory composed of two 64Mb DRAMs (4Mx16) in TSOP packages