BA 30 C Search Results

Contextual Info: J0 7;5930/;202B/90<BA=BA J0#33A0$EE9BB09/@@0 J0;=BA04B@30=?<A31A7<; J0;=BA0?3C3?@30=<9/?7AF0=?<A31A7<; J0;=BA07;6?B@601B?3;A0=?<A31A7<; J0%C3?9</20/;20@6<?A017?1B7A0=?<A31A7<; J0%C3?0C<9A/530=?<A31A7<;

SAK-C167CS-LM

Abstract: c167cs-lm Bootstrap SAK-C167CS-L40M C167CS-32FM C167CS AP163703 C167CS-L40M SAK-C167CS-4R33M SAK-C167CS-4R40M SAK-C167CS-4RM
Contextual Info: Microcontrollers Errata Sheet November 30, 2000 / Release 1.0 Device: Stepping Code / Marking: Package: SAK-C167CS-LM SAK-C167CS-L33M SAK-C167CS-L40M SAK-C167CS-4RM SAK-C167CS-4R33M SAK-C167CS-4R40M ES-BA, BA P-MQFP-144-1 This Errata Sheet describes the deviations from the current user documentation. The

Contextual Info: BLOCK TYPE AVALANCHE AUTOMOTIVE RECTIFIER BA30L AVALANCHE VOLTAGE 20 to 24 Volts CURRENT 30 Amperes Technical Specifecation: BA 24.0± 0.5 Features: 13.5± 0.3 High power capability Economical Avalanche Voltage: 20V to 24V Glass passivated chip • 8.5± 0.3

Contextual Info: N E W PRODUCT N E W PRODUCT N E W PRODUCT SL22 AND SL23 LOW V f SURFACE M O U N T S C H O TTK Y BA RRIER R EC TIFIER Reverse Voltage - 20 to 30 Volts FEATURES DO-214AA 0.086 2 .20 ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Contextual Info: 30 Amp 90 & 100V SC H O TTK Y BA RRIER R EC T IFIER S D a ta Sheet &30100Senes Semiconductor Mechanical Dimensions Description .900 -* \ T " .200 2 p lc s-lf O 670 JEDEC T0-3P l t .200 l .050 Typ Features • HIGH CURREN T CAPABILITY WITH LOW V , ■ HIGH SURGE VOLTAGE AND

TOLD-9211

Abstract: TOLD9211S told9211
Contextual Info: TOSHI BA LASER/FBR OPTIC SOE D • TD' Ì 7ES2 DQl bSSD 75fl « T O S TOLD9211(s) MAXIMUM RATINGS (TC=25°C) SYMBOL RATING UNIT Po 5 mW LD Reverse Voltage V r (ld) 2 V PD Reverse Voltage V r (pd) 30 V Tc -1 0 -5 0 °C Tstg -4 0 -8 5 °C CHARACTERISTIC Optical Output Power

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c

Contextual Info: P0.A<I8EF4?0"ACHG03080D/4 P0 BJ8E046GBE0BEE86G870 P0?B4G<A:07=HFG45?80BHEG;0 HGCHG P0%BJ0)EB9<?80C.0!<:; *<0&5/*70 *,1*276010F440-(&7-326 46GBEL0HGB@4G<BA -8FG020&84FHE8@8AG %<:;G0"A7HFGE<4?0DH<C@8AG 30*0,8E<8F B00GB0CB00 *H470(HGCHG0)BJ8E0,HCC?<8F0

TBA 850

Abstract: 271C Taa 450 max 14521 tba 450 TAA550B TBA 550B 550b tba 450 n TBA435
Contextual Info: LINEAR INTEGRATED CIRCUITS continued < _E o > a N X CD o s < E N >a T A A 5 50A/T BA 271A 30 ta 32 T A A 550B/TBA 271B 15 15 32 to 34 34 to 36 T A A 550C/TBA 271C TO-18 (1) 10 -3.2 to 1.6 10 -3.2 to 1.6 TO-18 (1) -3.2 to 1.6 TO-18 (1) 10 15 PACKAGE TYPE

Contextual Info: CATALOGUE LISTING z SW IT CH -BA SIC I—I r oc d V5F1HOCB1C o LU D< o 8.3 ±0.I 0.3 O O ÊL LO 4.3 T r 1ppo — 4 ,30±0.I5 i 6.3*0-I LEVER S T A I N L ES S STEEL m u o < + 0.2 0 I .65 -0 HOLE TERMINALS 3 _i Q_ LiJ cr ♦2.8 PRETRAVEL CD +0 10 0 3 . 1 -o 05

Scans-048

Abstract: DSAGER00040
Contextual Info: BCH 1 BL 2 Ba B as Type Uf 24 30 3,45 3,45 0,18 0,18 0,5 0,5 = •= . If H eizart ~ M° O EP N N Verw. 200 200 ^ 200 220 220 Ua - - - - 50 - - - - -1 0 2 - - _ - 50 -20 1 ,3 < 0,01 - 100 - - -1 0 2 ) -2 0 -6 -6 5 8) 40 3 3 la 6 — — h* - -2 Ug5 Ugi Ug3

Contextual Info: 2 1 A B 3B.9D±0.2 c 2 -4 J-4 0 D 1 2 3 4 REV. A DESCRIPTION NEW RELEASE PER E C R -Û 0 51 2 DRAWN/DATE CHECK/DATE APPROVED/DATE P. V. 10/1A/B8 MAX D S/14/D 0' J.CHEN 0 9 / 1 9 /0 0 " A 3.B1 ±D.15 NOTES : 1.0. RATING : Ba 1.1. VOTAGE : 30 VAC R.M.S. \2 . CURRENT : 1 5 AMPERE MAXIMUM PER CONTACT AT 3D T T -R I5 E

Contextual Info: General Purpose, Pulse and DC Transient Suppression MDK Series Metallized Polyester Film, Dual In-Line, low ESR/ESL, 50 – 630 VDC Overview Applications Dual in-line DIL metallized polyester (PET) film capacitor. Encapsulation in self-extinguishing material meeting the

Contextual Info: General Purpose, Pulse and DC Transient Suppression MDK Series Metallized Polyester Film, Dual In-Line, low ESR/ESL, 50 – 630 VDC Overview Applications Dual in-line DIL metallized polyester (PET) film capacitor. Encapsulation in self-extinguishing material meeting the

00bc0w

Abstract: BA50BC0FP ba50bc0 BA33BC0FP 18bc0w 50bc0w BA33BC0 33bc0w BA30BC0 ba60bc0
Contextual Info: BA BC0 series Regulator ICs 1A Low-Dropout Voltage Regulator with Low Saturation BA BC0 series BA BC0 series offers a line of low saturation type regulators that can supply as low output current as 1A. The output voltage precision appears ±2%. By the lineup of output voltage, the package lineup of surface mounted TO252 and

Philips 2222 017 capacitors

Abstract: 2222 118 48102
Contextual Info: Aluminum Electrolytic Capacitors Axial, Professional, Long Life Solid Aluminium SAL CECC 30 302-003 ^ w V Series « s N ' 118 A M L 138 Axial Miniature Long Life Useful life v \ x V x„ * | Series Ia h t j Axial High Temperature S A L - R P M 128 S A L - A 123

MSM56V16800D

Abstract: D-10 D-12 MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15
Contextual Info: Pr E2G1047-18-25 el im y 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

M5M4V16s30

Abstract: M5M4V16S30CTP-10 M5M4V16S30CTP10 M5M4V16S30CTP M5M4V16S30CTP-12 M5M4V16S30CTP12
Contextual Info: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S30CTP-10, -12, -15 Jan. '97 16M (2-BANK x 1048576-WORD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz

BA-0505D1

Abstract: ba-0505D1Lf BA 20 BA 50 900DDH BA-0505D BA-0505S BA-0512D BA-0512S BA-053R3D BA-053R3S
Contextual Info: BA LF Series 0.5 to 1 Watt Isolated DC-DC Converter Single / Dual Output 1. Features λ λ λ λ λ λ λ λ 4 Pin SIL / 8 Pin DIL Package Low Ripple and Noise Input / Output Isolation ：1000 Vdc 100% Burn-In Input Filter with Internal Capacitor Custom Design Available

is43r16160b-6tli

Abstract: is43r16160b
Contextual Info: IS43R83200B IS43R16160B, IC43R16160B 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture ; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data

HIK152

Abstract: hik8 HAK471BAK 400CA
Contextual Info: H.K Vishay Draloric Ceramic Pulse Disc Capacitors, Class 2 DESIGN: s max. Dmax. 3 max. Disc capacitor with epoxy coating HAK HBK HCK HIK 1kVDC 2kVDC 3kVDC 15kVDC L = 30 - 3 RATED VOLTAGE UR: F ±1 V ± 0.5 DIELECTRIC STRENGTH BETWEEN LEADS: Component test

MH1S64CWXTJ-12

Abstract: MH1S64CWXTJ-15 MH1S64CWXTJ-1539
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH1S64CWXTJ-12,-15,-1539 67108864-BIT 1048576-WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH1S64CWXTJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four

MIT-DS-0105-2

Abstract: MITSUBISHI date code
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH2S72CMD-10,-12,-15,-10B,-12B,-15B 150994944-BIT 2097152-WORD BY 72-BIT SynchronousDRAM DESCRIPTION The MH2S72CMD is 2097152-word by 72-bit Synchronous DRAM module. This consists of nine

active suspension

Abstract: MSM56V16160F MSM56V16160F-8 TSOPII50-P-400-0
Contextual Info: This version : Sep.1999 Semiconductor MSM56V16160F 2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL