BA 157 - 200 Search Results

BYX58-200

Abstract: byx 21 BYX 13 400 R Diodes de redressement MR05 PY 55 byx58
Contextual Info: DIODES DE R E D R E SSE M E N T RAPIDE fast recovery rectifier diodes V r WM TYPES / 100 m A *M R *M R *M R *M R •M R / 400 m A 22 42 43 44 45 / * BA 157 * BA 158 * BA 159 / 1 A / * LQ 1 tamb — 25 C / 2 4 6 8 tamb = 25°C / PLR2T PLR 8 T PL R 15 T 1 A

fagor ba 159

Contextual Info: S7E D • FAGOR 345^325 D00Ü732 nfl IFGRS BA 157 BA 159 FAGOR e l e c t r o n i c s Dimensions in mm. D O-15 F - 126 58 A 2 Plastic Voltage 400 to 1.000 V. Current 1.0 A. at 50°C. • Fast Recovery Diodes Mounting instructions • Diffused junction 1. Min. distance from body to soldermg point,

AD-04

Abstract: AD-01 AD-02 AD-03 BA-10E1UD BA-10G1UD BA-10H1UD BA-10R1UD BA-10Y1UD BA 30 C
Contextual Info: SINCE 1981 Part No. Digit Size 1.78*5.10mm 10Bar Graph Array 1.70*5.00mm 5Bar Graph Array Common Anode Chip Common Cathode BA-10R1UD GaAsP/Red 655 40 80 40 200 1.7 2.0 1.4 GaP/ Bright Red 700 90 40 15 50 2.2 2.5 2.0 BA-10G1UD GaP/ Green 568 30 80 30 150 2.2

DTM63618

Abstract: DTM63619 DTM63620 EEPROM14
Contextual Info: DTM63620, DTM63619, DTM63618 512MB-64Mx72, 256MB-32Mx72, 128MB-16Mx72, 184-Pin Registered DDR SDRAM DIMM Identification Performance range DTM63620 64Mx72 DTM63619 32Mx72 DTM63618 16Mx72 PC1600 200MHz/CL=2 Features Description Utilizes 100MHz DDR SDRAM Auto & self refresh capability DTM63620 is 8K Ref/64 MS,

DTM63621

Abstract: DTM63622 PC2100 DDR RAM POWER SUPPLY
Contextual Info: DTM63621, 63622 1GB-128Mx72, 184-Pin Registered DDR SDRAM DIMM Identification DTM63621: PC2100 266 MHz/CL = 2.5 DTM63622: PC1600 200 MHz/CL = 2 Features Description The 63621 utilizes 133MHz DDR SDRAM The 63622 utilizes 100MHz DDR SDRAM The Dataram DTM63621 assembly is a 1.2” high

DTM63614

Contextual Info: DTM63614 1GB-128M x 72, 184 Pin Registered DDR SDRAM DIMM Performance Range 266MHz/CL=2.5 200MHz/CL=2 Features Description Utilizes 133MHz DDR SDRAM Auto & self refresh capability SSTL_2 compatible inputs and outputs VDD/VDDQ= 2.5V +/- 0.2V MRS cycle, with address key, programs Latency Access

DTM67600

Abstract: sodimm pinout
Contextual Info: DTM67600 256MB - 32M x 64, 200-Pin Unbuffered DDR SODIMM Identification Part Number: DTM67600 Performance Range 266MHz/CL=2.5 200MHz/CL=2 Features Description Utilizes 133MHz DDR SDRAM The Dataram DTM67600 is a high-speed, random access, 256MB module configured as one physical

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 3-28-13 BA 3-28-13 TITLE: Ceramic Crystal Oscillator PART #: DATE: A

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 3-28-13 BA 3-28-13 TITLE: Ceramic Crystal Oscillator PART #: DATE: A

cannon 20-8

Contextual Info: 2mm Interconnect TEMPUS C B C 20 Design Notes Shroud/Tail Calculation Shroud Base 3,40 mm Tempus Tail Code Backplane Thickness mm inch 1,80 (.071) 1,90 (.075) 2,00 (.079) 2,10 (.083) 2,20 (.087) 2,30 (.091) 2,40 (.094) 2,50 (.098) 2,60 (.102) 2,70 (.106)

C531A

Contextual Info: 123456789AB4C 1 1 1 1234567896A7BCD79E2F7 E2F739A663763877 234567589A1BC1DEF1C4BA11 1C19B495BC11449A11 61 1 !"#$1 %9B495BC144CB157C1C1 451B&C'&1A591C1BC&AA6154495BC61 7 56A71C6AA61A61

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date BA 5-16-13 BAA 5-16-13 TITLE: JL9 Crystal Oscillator Assembly PART #: DATE:

Contextual Info: M383L6423DTS 184pin Registered DDR SDRAM MODULE 512MB DDR SDRAM MODULE 64Mx72(32Mx72*2 bank based on 32Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M383L6423DTS 184pin Registered DDR SDRAM MODULE Revision History

26180

Abstract: LM14250 LSH 26180 LSH 14250 LiMnO2 memoguard 6135-01-235-4168 LS 33600 6135997989851 BA5112U
Contextual Info: PRIMARY LITHIUM BATTERY SELECTOR GUIDE T H E B AT T E RY C O M PA N Y SAFT LITHIUM BATTERIES: EXCEEDING YOUR NEEDS For more than 30 years, Saft has pioneered, in Europe, North America and Asia/Pacific, the development and production of primary lithium cells

Contextual Info: M383L2923MT1 184pin Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 Jan. 2001 Rev. 0.2 Jan. 2001 184pin Registered DDR SDRAM MODULE M383L2923MT1 Revision History

Contextual Info: C 4 1 6 0 0 0 X FA S 1 6 R X 4.00L x 2.50W x 0.70H mm PDI C4-Series is a hermetically sealed quartz crystal in a seam-welded ceramic SMT package. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with customized parameters.

Contextual Info: C 4 2 5 0 0 0 X FA B 1 8 R X 4.00L x 2.50W x 0.70H mm PDI C4-Series is a hermetically sealed quartz crystal in a seam-welded ceramic SMT package. This crystal, designed to meet your most demanding specification, is available in standard or custom frequencies and/or with customized parameters.

DTM60149

Abstract: DTM60151 DTM60153 DTM60155 16Mx64 60153
Contextual Info: DTM60149, 60151, 60153, 60155 128MB-16M x 64/72, 168-Pin Unbuffered SDRAM DIMMS Identification DTM60149:16Mx64 DTM60151:16Mx64 DTM60153:16Mx72 DTM60155:16Mx72 PC100 PC133 PC100 PC133 Performance range PC100=100MHz 10ns@CL=2 PC133=133MHz(7.5ns@CL=3) Features

TSI320

Abstract: Alcatel 1511 BA delta wireless doorbell alcatel 1511 max tsi320l
Contextual Info: g _ _ Tsi320 Dual-Mode PCI-to-PCI Bus Bridge User Manual 80A600B_MA001_04 Preliminary June 2001 This document discusses the features, capabilities, and configuration requirements of the Tsi320. It is intended for hardware and software engineers who are designing system interconnect

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN Originator Date Engineering Date RD 3-19-13 BA 3-19-13 TITLE: Ceramic Crystal Oscillator PART #: B 3-2013

SDQ32

Contextual Info: M368L3313DTM Preliminary New PC2700 gerber based 256MB DDR SDRAM MODULE 32Mx64(16Mx64*2 bank based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.0 May. 2002 Rev. 0.0 May. 2002 M368L3313DTM Preliminary Revision History Revision 0.0 (May. 2002)

Contextual Info: MIL-STD-790 PRODUCT ASSURANCE CERTIFIED LABORATORY SUITABILITY CERTIFIED REV DATE PAGE DESCRIPTION AUTH MIL-PRF-38534 HYBRID MICROCIRCUIT CERTIFIED ECN ISO 9001 FM 75597 Originator Date Engineering Date RD 3-19-13 BA 3-19-13 D 3-2013 All Added Screening Requirement

Contextual Info: SG572568FH8DWUU October 16, 2009 Ordering Information Part Numbers Description Module Speed SG572568FH8DWKA 256Mx72 2GB , DDR3, 204-pin Unbuffered SO-UDIMM, ECC, 128Mx8 Based, DDR3-800-555, 25.40mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG572568FH8DW6B

Contextual Info: SG572128CH8SZUU1 October 21, 2009 Ordering Information Part Numbers Description Module Speed SG572128CH8SZKA1 512Mx72 4GB , DDR3, 244-pin Unbuffered Mini-DIMM, ECC, 512Mx8 Based (Stacked - two 256Mx8), DDR3-800555, 18.75mm, Green Module (RoHS Compliant).