BA 141 DIODE Search Results

GMR Head Preamplifier

Abstract: MAGNETIC HEAD reader writer VM5141
Contextual Info: VM5141 VTC Inc. 990823 PRELIMINARY FEATURES August 23, 1999 BLOCK DIAGRAM V ,M5 4 6 or 141 8-C ha nne l, AM R or GM R He ad s, C urre nt B ia s/C urre nt Sen se, C o nfigu ra ble Writ e C urrent Over/UNnd ew ershoo t, P in La yer R eve rsal, +5 V/+ 8V Sup plies, R e gister Prog ra mm ab le, T A De tect io n a nd Co mp en sation , Ba nd widt h 2 80+ M H z

ZO 103 MN

Abstract: zo 107 MA VM VTC 777
Contextual Info: VM5131 VTC Inc. 990823 PRELIMINARY FEATURES August 23, 1999 BLOCK DIAGRAM V ,M5 4 6 or 141 8-C ha nne l, AM R or GM R He ad s, C urre nt B ia s/C urre nt Sen se, C o nfigu ra ble Writ e C urrent Over/UNnd ew ershoo t, P in La yer R eve rsal, +5 V/+ 8V Sup plies, R e gister Prog ra mm ab le, T A De tect io n a nd Co mp en sation , Ba nd widt h 2 80+ M H z

diode ba110

Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Contextual Info: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V

Contextual Info: SIEMENS Silicon PIN Diode BA 597 Preliminary Data • RF switch, RF attenuator for frequencies above 10 MHz • Very low IM distortion Type BA 597 Ordering Code Pin Configuration taped 1 2 UPON INQUIRY C A Marking Package yellow/R SOD-323 Maximum Ratings

Contextual Info: Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Type Characteristics (2 a = 25 °C) Maximum Ratings Fr /f V mA CT pF at Fr V VF V Package at r, /F ä mA . a at h mA /r nA at Lead Code r* V • BA 582 35

Contextual Info: BAS19W- BAS21W SURFACE MOUNT FAST SWITCHING DIODE Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-323 -H ; h“ A m I— Mechanical Data_

smd sot23 marking l6

Abstract: MAF100 HB sot23 DO-35-DHD sot-23 Marking l7 ZF SOT23
Contextual Info: SIEMENS AKTIENGESELLSCHAF Q3E T> • Ô235b05 GQlSb70 2 « S I E Û PIN Diodes fo r G eneral Purposes Glass Packages Characteristics at Tk = 2 5 °C Max. ratings Type Vr Ptot V W °C BAR 12-1 BAR 12-3 100 100 0.25 0.25 BAR 79 60 - Package Marking BAR 12 C n ty p

Contextual Info: Zowie Technology Corporation Silicon Epit axial Planar Diode BA V19WSG / BAV20WSG / BAV21WSG Lead free product FEATURES z z Fast Switching Speed. 1 2 Surface Mount Package Ideally Suited For For General Purpose Switching Applications z High Conductance ANODE

diode sod-123 marking code 120

Abstract: diode sod-123 marking code t2 BA 141 diode
Contextual Info: BAV19W-BAV21W SOD-123 Plastic-Encapsulate Diodes SOD-123 FAST SWITCHING DIODE FEATURES MARKING: BAV19W: A8 BAV20W: T2 BA 2 W T3 BAV21W: Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

BAV21WSGH

Abstract: BAV19WS Zowie Technology BA 141 diode
Contextual Info: Zowie Technology Corporation Silicon Epit axial Planar Diode BA V19WSGH / BAV20WSGH / BAV21WSGH Lead free product Halogen-free type FEATURES z z Fast Switching Speed. 1 z High Conductance 2 SOD-323 Automatic Insertion For General Purpose Switching Applications

Contextual Info: Order this data sheet by BAW156LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAW156LT1 M onolithic Dual Sw itching Diode Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

SKP24A

Abstract: sis 968 P110a 5KP78A 5KP10A 5KP110A 5KP11A 5KP12A 5KP14A 5KP15A
Contextual Info: NEW ENGLAND SEMICONDUCTOR 5KP5.0A thru 5KP110A 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR O AVAILABLE IN VOLTAGES FROM 6.7V THRU 128V 0.3 1 0 + /-0 .0 1 0 The NES 5KP5.0 to 5K.P110A series o f transient suppressor diodes are designed to protect electronic equipment from failure due to over voltage transients. The devices

Contextual Info: NEW ENGLAND SEMICONDUCTOR 5KP5.0A thru 5KP110A 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR O AVAILABLE IN VOLTAGES FROM 6.7V THRU 128V 0.310+/-0.010 The NES 5KP5.0 to 5K.P110A series o f transient suppressor diodes are designed to protect electronic equipment from failure due to over voltage transients. The devices

irkv 300

Abstract: k142 IRKH135-16 SCR 40 RIA 120 25 RIA 120 SCR irkt 40 T 705 scr IRKT AN TBT 136 IRKH141-20
Contextual Info: 5*îE I INR 4Û554SE □OlBB'îO 705 assae irk’35' i R I SCR / SCR and SCR / DIODE NEW INT-A-pak Power Modules INTERNATIONAL RE CT IF IE R Features • H igh v o lta g e ■ E le c tric a lly is o la te d ba se p late ■ 3000 V RMS is o la tin g v o lta g e

IEC 947 EN 60947

Abstract: MCC panel design buzzer panel DC-13 Q300 RJ12 1302401 VDE 0660 - 107 Sonic Drive
Contextual Info: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

TE 2161

Contextual Info: S P E C 1 F 1 C A T 1 ON SILICON DIODE DEVICE NAME TYPE NAME : SPEC. No. : DATE . E R W 1 0-1 20 F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Cadici DRAWN. _ c a 3C CHECKED

Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

FSMA Connectors

Abstract: FSMA Connectors 905
Contextual Info: IBS CT 24 BK RB-LK/LK Data Sheet INTERBUS Bus Terminal Module with Remote Bus Branch and Connectors for Fiber-Optics Technology Data Sheet Revision A 11/1997 Product Description The bus terminal module can be used to connect a remote bus branch to the INTERBUS remote

S29JL064H

Abstract: S29JL064H55TFI00 S29JL064H90BAI
Contextual Info: S29JL064H 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Distinctive Characteristics Architectural Advantages „ „ Software Features Simultaneous Read/Write operations — Data can be continuously read from one bank while

A232

Abstract: S29JL064H
Contextual Info: Am29DL640H Data Sheet For new designs, S29JL064H supercedes Am29DL640H and is the factory-recommended migration path for this device. Please refer to the S29JL064H Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced

Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.

amd part marking

Abstract: S29JL064H S29PL064J
Contextual Info: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the

Contextual Info: PRELIMINARY Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while