B85 DIODE Search Results

B892

Abstract: MGS903 MGS902 MGS901
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

MGS903

Abstract: GC210
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aerolex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

GC310

Abstract: mgs904 MGS800 mgs801 MGS912 MGS901 equivalent MGS903 GB110 MGS901 b882
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

B85 diode

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-320ST3F The S IR -3 2 0 S T 3 F is a G a A s infrared light emitting d iode h o u se d in clear plastic. This device h a s a high lu m in ou s efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sa m e time ha s a wide radiation

mitsubishi avalanche photodiode ingaas ghz

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode suitable for • A c tiv e diameter 50 /¿m receiving the light having low noise, a wavelength band of • L o w noise

sir563

Abstract: CT81
Contextual Info: Sensors Infrared light emitting diode, cast type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm spectrum suitable for silicon detectors. It has a wide radiation angle and is ideal for com­

Contextual Info: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The SIM-20ST is a GaAs infrared light emitting diode housed in clear plastic. Side emission with a $ 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors make it an ideal light source for sensors. It is particularly suited

diode b1c

Abstract: b1c diode
Contextual Info: SKS C 120 GDD 69/11 – A3A MA B1C Absolute maximum ratings 1 Symbol IIN MAX IOUT MAX VIN MAX VOUT MAX VBUS MAX FIN MAX FOUT MAX FSW MAX SKiiP stack SKiiPRACK - Type 3A 3-phase IGBT converter This stack can be used as a 2Q 3-phase inverter or a 4Q converter. All values are valid for 2Q and 4Q

Contextual Info: MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES TYPE NAME FEATURES DESCRIPTION P D 7X X 8 s e rie s are InG aA s pin p h o to d io d e w h ic h has a PD 7XX8 is s u ita b le band of fo r </>80 fx m active diam eter • l0 0 0 ~ 1 6 0 0 n m sensitive area o f <j>80 ¡1 m.

B85 diode

Contextual Info: MITSUBISHI LASER DIODES p ML7XX12 SERIES ect'cai100 M o \c e 'n ûU,c l\rf\^s ar soroepararn InGaAsP - M Q W - F P LASER DIODE ARRAYS TYPE NAME FEATURES DESCRIPTION M L 7X X 1 2 s e rie s are InG aA sP p ro v id e s 12beam s w ith oscillation o f em ission

Contextual Info: MITSUBISHI LASER DIODES ML7XX11 SERIES InG aA sP -M Q W -D FB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are M Q W +— DFB* • L o w threshold current typical laser diodes emitting 10mA •S ta b le single transverse mode oscillation light beam around 131Qnm.

Contextual Info: Laser Diodes AIGaAs laser diodes RLD-78MV The RLD-78MV is the w o rld 's first m a ss-pro duced laser d io d e s to be mass produ ced by m olecular beam epitaxy. Low -noise is achieved th ro u g h se lf-p u lsa tio n . This laser diode is ideal fo r use in video disc

Contextual Info: LA-421 AK Series ¿r— K / Lig ht Emitting Diodes LA-421 AK Series Two color High Luminance LED Numeric Displays • ftTfc&ffiSH/'Dimensions Unit: mm LA-421 A K v ' J - X ' I i , fifflT * t 5 <fc 9 C x-tf < > $ ft it 2fe§g it , «w LA-421 A/K represents 2-color highillu m in an ce L E D num eric disp la y s

D0205AB

Abstract: IMTIA 1N4044 1N4047 1N4049 1N4050 IN4044 IR106 IR 106 in404
Contextual Info: Data Sheet No. PD-2.091 IN T E R N A T IO N A L R E C T IF I E R IOR 1 N 4 0 4 4 SERIES 2 7 5 Amp Avg Power Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics IN 4044 'F i AVI 275* @TC 120 'FSM t- t @ 50 Hz 60 Hz 1000V • Popular series fo r rough service

Contextual Info: LB-202 DN Series Y/ Light Emitting Diodes LB-202 r a iW DN Series 2 I n§ 5 High-Efficiency Numeric Displays • Dim ensions U nit : mm LB-202DN y ' J - X l i , o m M t t s f o z L T ffliZ L S i t c 0 f g f t f c f f iC G a A s P on G aP ( $ £ & < ) v L /c ,

Contextual Info: SK20GB123 # + ,- ./        Absolute Maximum Ratings Symbol Conditions IGBT 01 #2 + ,- . $ #2 + 4,- . $9:  4,55 ,6 7 # + 85 . 4- 7 65 7 ; ,5 #2 + 4,- . 45 @ # + ,- . ,B 7 # + 85 . 4C 7 $9:+ ,  $ SEMITOP 2 0 + <55 0= 0%1 > ,5 0=

Contextual Info: M IT S U B IS H I < DIGITAL ASSP> M 7 4H C 8 4 2 -1 P /F P 1 0-B IT 3-S TA T E IN V E R TIN G D -T Y P E TR A N S PA R E N T LATCH D E S C R IP T IO N T he M 7 4 H C 842-1 is a sem ico n d u cto r integrated circuit co n­ PIN C O N FIG U R A T IO N T O P VIEW

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

CMOS 4000 Logic Family

Abstract: cmos 4000 cmos 4000 logic MN74HC4078 h60 buffer MN74HC4078S CMOS 4000 Series family
Contextual Info: High-Speed CMOS Logic MN74HC Series mN74HC4078/m N 74HC4078S MN74HC4078/MN74HC4078S 8-Input NOR Gate P-1 • Description M N 74H C 4078/M N 74H C 4078S contain 8-input positive isolation NOR gate circuits. A doption o f a silicon gate CMOS process has resulted in low

Contextual Info: Sensors Photo interrupter 2-stage molded type R P I-1 2 4 The RPI-124 is an ultra-small photointerrupter. It is molded in plastic with a visible light filter to minimize the mfluence of stray light. •E x te rn a l dimensions Unit: mm •A pplicatio ns

2142-2

Abstract: DG441L
Contextual Info: DG441L/442L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance—rDS on : 17 W D Fast Switching —tON: 20 ns —tOFF: 12 ns

DG412L

Abstract: dg412ldy DG411L DG411LDY DG413L 21452 412L DG413LDQ
Contextual Info: DG411L/412L/413L Vishay Siliconix Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance—r DS on : 17 W D Fast Switching—tON: 19 ns —tOFF: 12 ns

Contextual Info: High-Speed CMOS Logic MN74HC Series MN74HC240/MN74HC240S MN74HC240/MN74HC240S Inverting Octal T R I -STA TE B uffers • Description P-5 MN74HC240/M N 74HC240S are high-speed inverting buffers constructed w ith octal tri-state outputs. High-speed operation