B85 DIODE Search Results

LL46

Abstract: b8544
Contextual Info: 03/11/99 13:58:22 Diodes B85-44fr-4BS0->6B38e81932 C88019322 BightFftI Page 00? BAT46 / LL46 GENERAL PURPOSE SCHÛTTKY BARRIER DIODES Features • • • • BAT46 High Breakdown Voltage Low Turn-on Voltage Guard Ring Construction tor Transient Protaction

MGS903

Abstract: MGS901 MGS902 GC31 MGS907 Aeroflex MGS903 MGS802A Aeroflex MGS905 MGS904 MGS801
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

B892

Abstract: MGS903 MGS902 MGS901
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

MGS903

Abstract: GC210
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aerolex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

MGS903

Abstract: MGS905 GB310 Aeroflex MGS905
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

GC310

Abstract: mgs904 MGS800 mgs801 MGS912 MGS901 equivalent MGS903 GB110 MGS901 b882
Contextual Info: MGS800/900 Series GaAs Schottky Diodes Description Features The Aeroflex / Metelics MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. • • • Fourteen different configurations Beam lead, Flip Chip or packaged devices

B85 diode

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-320ST3F The S IR -3 2 0 S T 3 F is a G a A s infrared light emitting d iode h o u se d in clear plastic. This device h a s a high lu m in ou s efficiency and a 940 nm spectrum suitable for silicon detectors. It is small and at the sa m e time ha s a wide radiation

mitsubishi avalanche photodiode ingaas ghz

Contextual Info: MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DISCRETION PD8XX2 is an InGaAs avalanche photodiode suitable for • A c tiv e diameter 50 /¿m receiving the light having low noise, a wavelength band of • L o w noise

RLD78NP

Abstract: rld78pp
Contextual Info: Laser Diodes AIGaAs laser diodes RLD-78PP/RLD-78NP The RLD-78PP and RLD-78NP are the •E x te rn a l dimensions Unit: mm w o rld ’s first m a ss-prod uced laser diodes those are m anufactured by molecular beam epitaxy. The charac­ teristics of these laser diodes are suit­

Contextual Info: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The S1M-20ST is a GaAs infrared light em itting diode housed in clear plastic. Side em ission with a <f> 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors m ake it an ideal light source for sensors. It is particularly suited

sir563

Abstract: CT81
Contextual Info: Sensors Infrared light emitting diode, cast type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940 nm spectrum suitable for silicon detectors. It has a wide radiation angle and is ideal for com­

B85 diode

Abstract: RLD-78NP15
Contextual Info: Laser Diodes AIGaAs laser diode RLD-78NP15 The R LD -78N P15 is th e w o rld ’s first • E x te rn a l dim ensions Unit: mm m a s s -p ro d u c e d la se r d io d e s th a t is m anufactured by m olecular beam epi­ taxy. The pro p e rtie s, h igh spe ed and

Contextual Info: Laser Diodes AIGaAs laser diodes RLD-78MV The R L D -78M V is the w o rld ’s first •E x te rn a l dimensions Unit: mm m ass-prod uced laser d io d es to be m ass pro du ced by m o lecular b eam epitaxy. Low -noise is achieved through self-p u lsation . This laser

SIR-34ST3F

Abstract: infrared sensors reliability
Contextual Info: Sensors Infrared light emitting diode, cast type SIR-34ST3F The SIR-34ST3F is a G aAs infrared lig h t e m ittin g d io d e ho use d in cle ar plastic. T his de vice has a high lu m ino us efficiency and a 950 nm spectrum suitable for silicon detectors. It is small and at the same tim e has a w ide radiation

a0432

Abstract: A-0427 nichicon a423 A0431 A423
Contextual Info: HYBRID I.C.s "Hi-Net" nîcKîcon Diode Arrays High-speed switching diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general electronic appliances.

diode b1c

Abstract: b1c diode
Contextual Info: SKS C 120 GDD 69/11 – A3A MA B1C Absolute maximum ratings 1 Symbol IIN MAX IOUT MAX VIN MAX VOUT MAX VBUS MAX FIN MAX FOUT MAX FSW MAX SKiiP stack SKiiPRACK - Type 3A 3-phase IGBT converter This stack can be used as a 2Q 3-phase inverter or a 4Q converter. All values are valid for 2Q and 4Q

Contextual Info: MITSUBISHI LASER DIODES PD7XX8 SERIES InGaAs PIN PHOTO DIODES TYPE NAME FEATURES DESCRIPTION P D 7X X 8 s e rie s are InG aA s pin p h o to d io d e w h ic h has a PD 7XX8 is s u ita b le band of fo r </>80 fx m active diam eter • l0 0 0 ~ 1 6 0 0 n m sensitive area o f <j>80 ¡1 m.

Photointerrupter rpi 574

Contextual Info: Sensors Photointerrupter, encased type RPI-574 The RPI-574 is a transm issive-type photointerrupter. The em itter is a GaAs infrared light em itting diode and the d e ­ tector is a silicon planar phototransistor. A positioning pin is provided on the external case to allow precise m ou nt­

B85 diode

Contextual Info: MITSUBISHI LASER DIODES p ML7XX12 SERIES ect'cai100 M o \c e 'n ûU,c l\rf\^s ar soroepararn InGaAsP - M Q W - F P LASER DIODE ARRAYS TYPE NAME FEATURES DESCRIPTION M L 7X X 1 2 s e rie s are InG aA sP p ro v id e s 12beam s w ith oscillation o f em ission

Contextual Info: MITSUBISHI LASER DIODES ML7XX11 SERIES InG aA sP -M Q W -D FB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX11 series are M Q W +— DFB* • L o w threshold current typical laser diodes emitting 10mA •S ta b le single transverse mode oscillation light beam around 131Qnm.

Contextual Info: Laser Diodes AIGaAs laser diodes RLD-78MV The RLD-78MV is the w o rld 's first m a ss-pro duced laser d io d e s to be mass produ ced by m olecular beam epitaxy. Low -noise is achieved th ro u g h se lf-p u lsa tio n . This laser diode is ideal fo r use in video disc

IEC50

Abstract: Infrared photosensor
Contextual Info: Sensors Reflective photosensor with encased reflector RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity and a built-in visible light filter

smd diode 106a

Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
Contextual Info: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD