B724S4D Search Results

MSC2312A80YS9

Abstract: MSC2312A-XX
Contextual Info: > O K I 4 bE D • b724S4D □DDe1b7S BTT « O K U sem icon d u ctor MSC2312A-XXYS9/KS9 T - V<T- 23 1,048,576 BY 9 BIT DYNAMIC RAM MODULE O K I SEMICONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2312A-XX YS9/KS9 is a fully decoded, 1,048,576 words x 9 bit CMOS dynamic random

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

a10u

Abstract: B724e
Contextual Info: O K I Semiconductor MSM514101B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.

b72L

Contextual Info: O K I Semiconductor MSM51 V1000 1,048,576-Word x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51V1000 is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM51V1000 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM27C101ZB 131,072-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C101ZB is a 1 Mb electrically Programmable Read-Only Memory organized as 131,072 words x 8 bits. The MSM27C101ZB operates on a single 5.0 V power supply and is TTL compatible. Since

ic top 246 yn

Abstract: MSM65514 MSM65P514 TSic 306
Contextual Info: S &E D • b 7 2 4 E 4 D D D 1 3 Û 6 5 Sb4 H O K I J O K I Semlconauctor MSM65514/ 65P514 O K I S E M I C O N D U C T O R GR OU P T - OKI's ORIGINAL nX HIGH PERFORMANCE CMOS 8-BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION MSM65514 is a high-performance 8-bit single-chip controller that employs OKI's original nX-8/50 CPU core.

Contextual Info: O K I Semiconductor MSM56V16400 2-Bank x 2,097,152-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

BT 151 PIN DIAGRAM

Abstract: MK31VT864A MK31VT864A-8YC
Contextual Info: M K31VT864A-8YC 98.06.26 O K I Semiconductor M K 3 1 V T 8 6 4 A -8 Y C 8,388,608 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK);_ DESCRIPTION The Oki MK31VT864A-8YC is a fully decoded, 8,388,608 x 64bit synchronous dynamic

Contextual Info: O K I Semiconductor MSC23T/P1721 C-xxBS20 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D1721C-xxBS20 is a fully decoded 1,048,576-word x 72-bit CMOS Dynamic Random Access Memory Module composed of sixteen 4-Mb DRAMs 1M x 4 and four 2-Mb

Contextual Info: O K I Semiconductor MSM6788 SBC SOLID-STATE RECORDER LSI GENERAL DESCRIPTION The MSM6788 is a solid-state-recorder developed using the Sub Band Coding SBC method. By externally connecting a microphone, a speaker, a speaker drive amplifier, and dedicated DRAM

b72 voltage regulator

Abstract: AN/URT-23E
Contextual Info: O K I SEMI CONDUCTOR GROUP 23E D • b7S454D ~ T 'S L - \ Z □ OOti4=14 1 - o .s O K I semiconductor _ MSC1187-XX_ DOT DRIVER WITH DIMMING FUNCTION G ENERAL DESCRIPTION The MSC1187-XX is a vacuum fluorescent display tube driver IC using the Bi-CMOS process for