B71 DIODE Search Results

Contextual Info: b3E D 'i S m ö S H 0000454 IVtll b71 RECTIFIER CHIPS 70nS RECOVERY V RWM T rr = = D90U4 D90U6 D90U8 D90U10 Ni - Gold Top and Bottom 4 00 -1000V 70nS Glass Passivation Hermetically Sealed 030 I VOLTAGE MULTIPLIERS I NC ' 4" .090 .090 Peak Inverse Voltage Reverse

1DI200A-120

Abstract: 1si10A 1DI200Z-120 1SI100A-100 M114 1DI400A-140 1DI300ZP-120 1DI300A-120 1DI200ZP 2DI150Z-100
Contextual Info: COLLMER SEMICONDUCTOR INC 2230712 4ÔE » 0 Q 0 1 S 7 3 b71 M C O L <S Power Darlington Modules 1000 VOLTS Device Type V c bo V ceo VCEO s u s I Volts Volts Volts I Ic Pc cont. Amps Watts (perxslr) h ra @ min Ic VcE Amps. Volts Switching time (max.) ton

Contextual Info: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )

nec laser diode

Abstract: 1992E NDL7130D1 NDL7130D 1480 nm diode laser laser diode chip NEC diode
Contextual Info: N E C ELECTRONICS INC bgE » • b427525 00380b! b71 M N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL7130D, NDL7130D1 ELECTRON DEVICE 1 4 8 0 nm OPTICAL FIBER COMM UNICATIONS InGaAsP M Q W -DC-PBH LASER DIODE DESCRIPTION NDL7130D and NDL7130D1 are 1 480 nm pumping laser diode, that has a newly developed Multi-Quantum Well MQW

75008

Abstract: TRW POWER trw diode
Contextual Info: OPTEK TECHNOLOGY INC ObE D | b71û5ftD 00002=17 7 I - f - q i - i t TRY* O p to e le c tro n ic s D iv is io n T R W Electronic Components Group Product Bulletin 5381 January 1985 GaAs Infrared Em itter Chip T yp e 0 P C 1 2 3 F e a tu re s A b s o lu te M a x im u m R a tin g s 111IT A = 25°C unless otherwise noted

20KV DIODE

Abstract: HIGH VOLTAGE DIODE 20kv ESJA53-20A
Contextual Info: SPECIFICATION D e v ic e Maine_ : High V o lta g e Si I icon Diode Type Name_ ; ESJA53 Spec. 20A No. i ! i Fuji E lectric C o.,Ltd. Matsumoto Factory NAME DATE DRAWN ! CHECKED Ì ' APPROVED Fuji Electric Co^Ltd. 1 1 1 § o ^ •■ r WM S33ä7^E GGDb234 735 B

SDF2000H

Abstract: SANSHA SDF2000H100 SDF2000H120 SDF2000H80
Contextual Info: SANSHA E L E C T R I C MFG CO sbE » • T w an a ban dgdomss m s e h j DISC TYPE DIODE SDF2000H r - 'ù j- z z SD F2000H is a Flat Pack Diode designed for high power rectifi­ cation. • If av = 2000A, VRRM= 1200V • High Reliability by pressure mount construction.

BY428

Abstract: ScansUX40
Contextual Info: T - O I - 1 7 Very fast parallel efficiency diode PHI LI P S I N T E R N A T I O N A L DESCRIPTION BY428 SbE D QUICK REFERENCE DATA Double-diffused glass passivated rectifier diode in a hermetically sealed, axial-leaded glass SOD64 envelope, intended for use as an

S06200

Contextual Info: TS04700 thru T S 10000 emiCorp. SANTA ANA, CA For more information call: 714 979-8220 FE A T U R E S LOW VOLTAGE AVALANCHE D IO D E S • Low voltage avalanche zener diodes. • Considerably sharper breakdown than standard 4-10 volt zeners. • Suppressed field emission breakdown mechanism produces avalanche

Semikron skiip 22 nab 12

Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
Contextual Info: fil3bt,71 D 0 0 b 74 D B MiniSKiiP o CO motor power |kW| Designation Ä MiniSKiiP ratings for basic AC/AC circuits rectifier brake chopper l-|A| VfcES., current temp Cal M /„ sWmts sensor diode P lf 25“C inverter Rth|h* [K/W] IGBT/ CAL diode size 5,0/4,0

Contextual Info: sem ikrdn V rsm Ifrm s m a xim u m valu e for continuous operation V r rm 400 A Ifa v (sin. 180; Tcass = 85 °C; 50 Hz) SKKD 170 M 170 A V 1500 SKKD 170 M 15 1700 SKKD 170 M 17 1900 SKKD 170 M 19 2400 SKKD 170 M 24 Symbol Conditions SEMIPACK 3 Fast Diode Modules

N3085

Abstract: 1N3085 1N3711 N3111 TC 30i 1N3086 1N3111 1N5162 1N3065
Contextual Info: Data Sheet No. PD-2.089 INTERNATIONAL RECTIFIER I Ö 1 N30B5, 1 N31 R N51 62SERIES 1 50 Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N13711 1N3085 |lN5162 Units 'F AV 150* A @Max. Tç 150* °C 'fsm t2t • Rugged device for duty cycle applications

diode B61

Abstract: b84 diode SO56-2 diode b81 diode b84 b71 DIODE b81 diode B7414 DIODE B82 diode b83
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

b847

Abstract: SKN40 106A2
Contextual Info: fll3bb71 OOOBÛôb TTG 5 IE D sem ikro n SEMIKRON INC Rectifier Diodes VrsM V rrm V 4000 A 50 °C 6000 A (85 °C) 100 SKN 4000/01 - 200 SKN 4000/02 SKN 6000/02 400 SKN 4000/04 SKN 6000/04 600 SKN 4000/06 - If av (sin. 18 Symbol Conditions Ifav Tease Ifsm

Contextual Info: • fll3fc. fc. 71 □□□5D31 310 S K iiP P A C K S K iiP 202 G D L 120 - 400 W T E/U A b s o lu te M a xim u m R a tin g s Values Units IGBT & Inve rse Diode V ces Operating D C link voltage V c c 10) T h e a tsin k = 25 °C lc T h e a tsin k — 25 °C; tp < 1 ms

diode b81

Abstract: diode B61 diode b84 DIODE B82 b84 diode DIODE B34 diode b73 SO56-2
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

DIODE B82

Abstract: DIODE B34 DIODE B44 B14 DIODE b34 diode SO56-2 diode b83 B82 diode diode b81
Contextual Info: FAST CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT162344AT/CT/ET Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • The FCT162344AT/CT/ET is a 1:4 address line driver built using advanced dual metal CMOS technology. This highspeed, low power device provides the ability to fanout to

B848

Abstract: b847 SKN40 W0024
Contextual Info: fll3bb71 OOOBÛôb TTG 5 IE D sem ikro n SEMIKRON INC Rectifier Diodes VrsM V rrm V 4000 A 50 °C 6000 A (85 °C) 100 SKN 4000/01 - 200 SKN 4000/02 SKN 6000/02 400 SKN 4000/04 SKN 6000/04 600 SKN 4000/06 - Ifav (sin. 18 Symbol Conditions Ifav Tease Ifsm

ON B34

Abstract: DIODE B82 DIODE B34 diode b84 max 3249 DIODE B44 74FCT163344 b84 diode DATASHEET B34 DIODE B23
Contextual Info: 3.3V CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT163344/A/C ADVANCE INFORMATION Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)

Contextual Info: 1N6478 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N6484 SURFACE MOUNT, GLASS PASSIVATED 1.0 Amp SILICON RECTIFIER DIODE FEATURES: Plastic material has Underwriters Laboratory S G1 Flammability Classification 94 V -0 Low Leakage Glass Passivated Junction

Contextual Info: s e MIKRD n SKiiP 912 GB 120 - 303 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 900 1800 - 5 5 . . . + 150 3000 5 740 1800 6480 210 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ).+ 85(70) V V kV/|iS °C |Conditions 1) IGBT & Inve rse Diode V ces

SKiiP 613 GB

Contextual Info: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C

Contextual Info: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply

Contextual Info: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41