B424D Search Results

m51164

Abstract: MSM5116405A M5116405
Contextual Info: Um O K I Semiconductor MSM5 1 16405 A 4,194,304-Word x 4-Bit DYN A M IC RAM : FAST PAGE M O D E TYPE W ITH EDO DESCRIPTION The MSM5116405A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116405A achieves high integration, high-speed operation, and low-power

ST 27C1000

Contextual Info: O K I Semiconductor MSM6690 RO M Interface LSI DESCRIPTIO N The MSM6690 is a LSI capable of driving 3 devices of 131,072 x 8 bit EPROM or MASKROM. m VDD SADX H SADY I SÄSX 38 ] S Ä S Y DOUT | T T ESTO 1 Ö L The MSM6690 is provided with a built-in internal

Contextual Info: O K I Semiconductor MSM6389_ 1,048,576-WORD X 1-BIT SOLID STATE RECORDER DATA REGISTER GENERAL DESCRIPTION MSM6389 is a solid state recorder data regis­ ter in 1,048,576 words x 1 bit configuration. the direction of words is possible by an exter­

Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C

Contextual Info: O K I Sem iconductor M SM 511664A/AL_ 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The M SM 511664A/A L is a 65,536-word x 16-bit dynam ic RAM fabricated in OKI’s CM O S silicon gate technology. The M SM 511664A/A L achieves high integration, high-speed operation, and lowpow er consum ption due to quadruple polysilicon single metal CM OS. The M SM 511664A /A L is

04S75

Abstract: MSM 80C51 oki 80C49 P MSM5259GS 80c49 MSM6262-01GS MSM5839CGS SM240 lcd module 40x4 7 SEGMENT DISPLAY 80c51 PIN CONFIGURATION
Contextual Info: O K I SE M IC O ND UC T OR GROUP IDE D | b72H24D ÜDÛ4Û32 7 | OKI s e m i c o n d u c t o r T- 52 - 13-07 M S M 6 2 6 2 - 0 1 G S DOT MATRIX LCD CONTROLLER WITH 48DOT COMMON DRIVER GENERAL DESCRIPTION The OKI MSM6262GS is a dot m atrix LCD controller which is fabricated by OKI's low power con­

FZJ 131

Abstract: BE454 MSM51C256 MSM51C256-10 MSM51C256-12 MSM51C256-8 MSM51C256RS L262144 dynamic ram binary cell
Contextual Info: K I SEflICONDUCTOR GROUP IDE D g fc,754240 ÖD04143 b | O K I semiconductor MSM51C256RS/JS * 262,144 W O RD X1-BITS DYNAM IC RAM GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit. The technology used to fabricate the MSM51C256 is OKI's CMOS silicon gate process technology. The

Contextual Info: O K I Semiconductor MSM5 14260A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514260A /A SL is a new generation D ynam ic RA M organized a s 262,144-w ord x 16-bit configuration. The technology u sed to fabricate the M SM 514260A /A SL is OKI's C M O S silicon gate process

Contextual Info: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

MSM51V17800

Contextual Info: O K I Semiconductor MSM51 V17800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM51V17400A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17400A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17400A is

MSM511664-10

Abstract: MSM511664-80
Contextual Info: SflE D • b724240 0012=111 5 ^ O K I ■ OKIJ SEMICONDUCTOR GROUP : O K I semiconductor_—r-qfe-z*»MSM 511664 _ 65,536-WORD X ~ h 16-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM511664 is a new generation dynamic RAM organized as 65,536 words x 16 bits. Thé

27C1000

Abstract: y1010 27C1000 eprom Y1013 Y1014 MSM6388 MSM6389 MSM6586 MSM6587 MSM6588
Contextual Info: O K I Semiconductor MSM6690 ROM Interface LSI DESCRIPTION The MSM6690 is a LSI capable of driving 3 devices of 131,072 x 8 bit EPROM or MASKROM. DOUT TESTO1 TEST02 TEST TSS The MSM6690 is provided with a built-in internal address generator circuit and one external clock