B40 DIODE Search Results

B40-0002

Abstract: B40-0003 J-STD-020B IC TESTERS RS436
Contextual Info: B40 4-Channel RF Relays Ball Grid Array 4-Channel Relays The B40 is four independent form A channels in one quad package. Coto’s Ball Grid Array BGA construction offers a breakthrough in reed relay performance. This patented technology1 allows for shorter

Contextual Info: SGS-1H0MS0N IMOigœiILliera *® S T B 7 N B 40 N - CHANNEL ENHANCEMENT MODE _PowerMESH MOSFET PRELIM IN ARY DATA TYPE STB7N B40 . • . . . . V dss RDS on Id 400 V < 0.9 Q. 7 .0 A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

6MBI50J-120

Abstract: F4956 DIODE M4A F495
Contextual Info: This Material Copyrighted By Its Respective Manufacturer 2. 3. Equivalent C irc u it of Module Equivalent C irc u it -04- +o- -OE ,C O GICH G3CH BtO — 630— C50—I C2CHI ' ' C4CH l B20- B40- -O O 1V a E50- -o . gscH Current Control C ircu it - ù w I

Contextual Info: SGS-THOMSON RfflD01ñ!<s [l[L[ie,ü’[KÍ@RDD S$ STP5NB40 STP5NB40FP N - CHANNEL ENHANCEMENT MODE _ PowerMESH MOSFET PRELIMINARY DATA TYPE STP5N B40 STP5N B40FP . . . . . V dss R dS(oii ) Id 400 V 400 V < 1 .8 Q. < 1 .8 Q. 4 .7 A 3.1 A TYP IC A L Ros(on) = 1.47

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ STB 11 N B 40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TB11N B40 R D S(on) Id < 0 .5 5 Q. 1 0 .7 A dss 400 V • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED

Contextual Info: S G S -T H O M S O N RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ S T B 11NB 40 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET V TYPE S TB11N B40 dss 400 V R D S(on) Id < 0 .5 5 Q. 1 0 .7 A • TYPICAL RDS(on) = 0.48 EXTREMELY HIGH dV/dt CAPABILITY . 100% AVALANCHE TESTED

Contextual Info: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48ÎÎ - 1 0.7A - T0-220/T0-220FP PowerMESH MOSFET TYPE V dss R D S o n Id S TP11N B40 S T P 1 1 N B 4 0F P 400 V 400 V < 0.5 5 Q. < 0.5 5 Q, 1 0 .7 A 6.0 A • . . . . TYPICAL RDS(on) = 0.48 £1 EXTREMELY H IG H dV /dt CAPABILITY

lighting

Abstract: equivalent for DIAC DB3 EM513 DIODE SMD diode DB3 UF4005 smd DIAC DB3 EQUIVALENT diac smd C7000-4000 DIAC Br100 b40 bridge
Contextual Info: Diotec Products for Lighting Typical Applications: Compact Fluorescent Lights, Lighting Ballasts Rectification Î Bridge Rectifiers, Single Rectifiers, High Voltage Rectifiers Boost-Diode for PFC Î Ultrafast Rectifiers Protection Î TVS-Diodes, Zener-Diodes

b40 550

Contextual Info: 301U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range RoHS • High voltage rating up to 2500 V COMPLIANT • High surge current capabilities • Stud cathode and stud anode version • High resistance to acceleration

b40 550

Abstract: N301U b40 5000 R305UR
Contextual Info: 301U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range RoHS • High voltage rating up to 2500 V COMPLIANT • High surge current capabilities • Stud cathode and stud anode version • High resistance to acceleration

Contextual Info: 301U R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Wide current range • High voltage rating up to 2500 V RoHS • High surge current capabilities COMPLIANT • Stud cathode and stud anode version

MSS40

Abstract: 448-E45 b20 diode transistor p86 h20 040
Contextual Info: MSS40,000 Series Medium Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

Contextual Info: MSS40,000 Series Medium Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

MSS30

Abstract: b20 diode MSS-30 248-H30 442-E4
Contextual Info: MSS30,000 Series Low Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

C1995

Abstract: CGS74CT2524 M08A
Contextual Info: CGS74CT2524 1 to 4 Minimum Skew 300 ps Clock Driver General Description Features These minimum skew clock drivers are designed for Clock Generation and Support (CGS) applications operating at high frequencies This device guarantees minimum output skew across the outputs of a given device

Contextual Info: CGS74CT2524 1 to 4 Minimum Skew 300 ps Clock Driver General Description Features These minimum skew clock drivers are designed for Clock Generation and Support (CGS) applications operating at high frequencies This device guarantees minimum output skew across the outputs of a given device

Contextual Info: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength • High surge current capability ~ • Typical IR less than 0.1 µA ~ • Solder Dip 260 °C, 40 seconds

B40C800DM

Abstract: B125 B380C800DM JESD22-B102D J-STD-002B B80 diode B80C800DM
Contextual Info: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder Dip 260 °C, 40 seconds ~ • Component in accordance to RoHS 2002/95/EC

B80 diode

Contextual Info: B40C1000G thru B380C1000G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

Contextual Info: B40C800DM thru B380C800DM Vishay General Semiconductor Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for automated placement • High surge current capability • Solder dip 260 °C, 40 s ~ ~ • Component in accordance to RoHS 2002/95/EC

B80 diode

Contextual Info: B40C800G thru B380C800G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

Contextual Info: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

B250 bridge diode

Abstract: b40 diode B380C1500G-E4/51 C1500G B125 B380 B380C1500G B40C1500G JESD22-B102 J-STD-002
Contextual Info: B40C1500G thru B380C1500G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA

B380

Abstract: B250 Bridge Rectifiers B125 B380C1000G B40C1000G JESD22-B102 J-STD-002 600-1000V B80 diode
Contextual Info: B40C1000G thru B380C1000G Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES • Ideal for printed circuit boards • High case dielectric strength ~ + ~ ~ + − e4 • High surge current capability • Typical IR less than 0.1 µA