TC58FVM5T3AFT65
Contextual Info: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 × 8 bits or as 2097152 × 16 bits. The TC58FVM5T2A/B2A/T3A/B3A features
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ba60
Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5
Contextual Info: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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tc58fvm532mbittc58fvm5t2a/b2a/t3a/b3a33554432-bit+4ba60tc58fvm5b2atc58fvm5t2atc58fvm5t3aft65
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XB-70
Abstract: TC58FYM5T2A TC58FVM5B2A TC58FVM5T2A
Contextual Info: TC58FYM5 T/B (2/3) A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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tc58fym532mbittc58fym5t2a/b2a/t3a/b3a33554432-bit+4xb-70tc58fym5t2atc58fvm5b2atc58fvm5t2a
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TOSHIBA TC58 cmos memory -NAND
Abstract: ba60 TC58FVM5B2A TC58FVM5T2A 33554432-BIT TOSHIBA TC58
Contextual Info: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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tc58fvm532mbittc58fvm5t2a/b2a/t3a/b3a33554432-bit+5toshiba tc58 cmos memory -nandba60tc58fvm5b2atc58fvm5t2atoshiba tc58
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BA57
Abstract: CA1113
Contextual Info: TC58FYM5 T/B (2/3) A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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tc58fym532mbittc58fym5t2a/b2a/t3a/b3a33554432-bit+2ba57ca1113
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TC58FVM5T2ATG65
Abstract: TC58FVM5B2ATG65 tc58fvm5t2atg TC58FVM5T3ATG65 tc58fvm5t2at TC58FVM5B2ATG TC58FVM5B3ATG65 TC58FVM5B2A TC58FVM5T2A 007000H-007FFFH
Contextual Info: TC58FVM5 T/B (2/3)A(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3
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tc58fvm532mbittc58fvm5t2a/b2a/t3a/b3a33554432-bit+11tc58fvm5t2a/b2a/t3a/b3tc58fvm5t2atg65tc58fvm5b2atg65tc58fvm5t2atgtc58fvm5t3atg65tc58fvm5t2attc58fvm5b2atgtc58fvm5b3atg65tc58fvm5b2atc58fvm5t2a007000h-007fffh
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transistor ba47
Abstract: BA60 2A00 ba37 diode ba63 TC58FVM5B2A TC58FVM5T2A TC58FVM5
Contextual Info: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3
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tc58fvm532mbittc58fvm5t2a/b2a/t3a/b3a33554432-bit+8tc58fvm5t2a/b2a/t3a/b3transistor ba47ba602a00ba37 diodeba63tc58fvm5b2atc58fvm5t2a
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TC58FVM5B2A
Abstract: TC58FVM5T2A tc58 flash
Contextual Info: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3
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tc58fvm532mbittc58fvm5t2a/b2a/t3a/b3a33554432-bit+4tc58fvm5t2a/b2a/t3a/b3tc58fvm5b2atc58fvm5t2atc58 flash
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D-10
Contextual Info: REVISIONS DATE YR-MO-DA DESCRIPTION LTO APPROVED 1987 OCT 7 C o nvert to m i l i t a r y draw ing fo rm a t. Add case o u t lin e Z , change case o u t lin e 3 le a d f i n i s h from C to A f o r vendor p a r t number AM2909A/B3A. Add vendor CAGE number 50088 to d ra w in g ._
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D-10
Contextual Info: REVISIONS DATE YR-MO-DA DESCRIPTION LTO APPROVED 1987 OCT 7 C o nvert to m i l i t a r y draw ing fo rm a t. Add case o u t lin e Z , change case o u t lin e 3 le a d f i n i s h from C to A f o r vendor p a r t number AM2909A/B3A. Add vendor CAGE number 50088 to d ra w in g ._
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marking sm
Abstract: multifuse part marking Bourns
Contextual Info: March 31, 2003 Circuit Protection Solutions Bourns Rep District Sales Managers Bourns Rep Distributor Managers Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team e t a d p U IT CTION U C CIRPROTE Bourns Multifuse® MF-SM/33
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mf-sm/33mf-sm100/33-2mf-sm150/33-2marking sm+3multifusepart markingbourns
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multifuse
Abstract: marking sm marking code SM diode B3A marking MARKING B3A General Semiconductor SM marking code mf marking code Sm SM marking code SM10
Contextual Info: March 31, 2003 Circuit Protection Solutions Bourns Rep District Sales Managers Bourns Rep Distributor Managers Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team e t a d p U IT CTION U C CIRPROTE Bourns Multifuse® MF-SM/33
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mf-sm/33mf-sm100/33-2mf-sm150/33-2multifuse+9marking smmarking code sm diodeb3a markingmarking b3ageneral semiconductor smmarking code mfmarking code smsm marking codesm10
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B3A SOT
Abstract: B3A sot23-5 AD8605 SOT23-5 B3A RU-14 B3A SOT23 AD8605ACB-REEL AD8605ACB-REEL7 AD8606 AD8608ARZ-REEL71
Contextual Info: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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ad8605/ad8606/ad8608ad8608ad8606ad8605+10ot-2314-leadb3a sotb3a sot23-5sot23-5 b3aru-14b3a sot23ad8605acb-reelad8605acb-reel7ad8608arz-reel71
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AD8605
Abstract: AD8608 B3A sot23-5 B3A SOT SOT23-5 B3A AD8606 MS-012-AB RU-14 footprint soic_n 14 narrow
Contextual Info: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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ad8605/ad8606/ad8608ad8608ad8606ad8605+8ot-2314-leadb3a sot23-5b3a sotsot23-5 b3ams-012-abru-14footprint soic_n 14 narrow
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PALC22V10D-25DMB
Abstract: PALC22V10D-20DMB BKA marking code 5962-89841 qml-38535 QPC22V10-20 5962-8984104LA MARKING B3A QPC22V10 596289841123a
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added K package. Added 04 device, two suppliers and 05 device, one supplier. Added vendor CAGE 34335 for devices 01L, 013, and 02L. Editorial changes throughout. Added vendor CAGE 34335 for devices 01K, 023, and 02K. Redrawn.
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5962-r079-931fn415962-r263-975962-r341-97+116s055palc22v10d-25dmbpalc22v10d-20dmbbka marking code5962-89841qml-38535qpc22v10-205962-8984104lamarking b3aqpc22v10596289841123a
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53S3281J
Abstract: 53S3281AJ883B 8200802JA 8200804JA 53S3281AJ AM27S43 8200801JA qml-38535 58625 8200802KA
Contextual Info: REVISIONS LTR DESCRIPTION F Change to vendor similar part number for vendor CAGE 18324. Changes to table I parameters tEA and COUT. Add vendor CAGE 18324 to device types 03 and 04 as a source of supply. Add new device design for device 04 for vendor CAGE 07933. Removed table
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b3a transistor
Abstract: Transistor Bo 47 MARKING B3A marking b3n
Contextual Info: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent
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sc-74dta143tkasc-70sc-59+4b3a transistortransistor bo 47marking b3amarking b3n
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AD8605
Abstract: AD8606 AD8608 SOIC-14 SOIC-8 AD86081
Contextual Info: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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AD8605
Abstract: AD8606 AD8608 SOIC-14
Contextual Info: Precision Low Noise CMOS Rail-to-Rail Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 µV maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 10 MHz High open-loop gain: 120 dB
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AD8605
Abstract: AD8606 AD8608 SOIC-14 B3A sot23-5 B3A SOT23
Contextual Info: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 V maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 1000 V/mV High open-loop gain: 120 dB
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AD8605
Abstract: AD8606 AD8608 SOIC-14 MO-187-AA Package B3A sot23-5
Contextual Info: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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"Microphone Preamplifier" 1.5V transistor
Abstract: AD8606 mark B6A AD8605 AD8608 SOIC-14
Contextual Info: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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ad8605/ad8606/ad8608ad8608ad8606ad8605+5ot-23ru-14microphone preamplifier" 1.5v transistormark b6asoic-14
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ad8605
Abstract: 5v headphone AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: Precision Low Noise, CMOS Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 V maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 1000 V/mV High open-loop gain: 120 dB
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ad8605/ad8606/ad8608ad8605ad8606ad8608+314-leadru-145v headphone amplifier circuit diagram
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pal20ra10mjs
Abstract: PAL16C1ML m38510 8506504RA PAL20L10AMJS 8412909LA PAL20L8AMJS PAL12L6MJ 8412906LA 16R8A
Contextual Info: Military PAL Devices JAN 3 8 5 1 0 and Standard M ilitary Drawing Program Advanced Micro Devices and Monolithic Memories are active participants in the JAN 38510 and Standard Military Drawing SMD Program. The idea behind the SMD Program is to stan dardize MIL-STD-883, Class B microcircuits where fully qualified
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mil-std-883product680301ka962-86803013a962-87528012a+165962-8752802ra962-87528022a5962-8752802sa5962-8752803ra962-87528032a5962-8752803sapal20ra10mjspal16c1mlm385108506504rapal20l10amjs8412909lapal20l8amjspal12l6mj8412906la16r8a
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