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B2-150K
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Associated Components
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Inductor: RF: Shielded: 15u: 10%: 2.5M: 45: 620m: Axial: T/R |
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53.27KB |
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B2151IR-20C000133U1930
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Harvatek
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3.2(L)X2.55 (W)X 1.6 (H) MM IR |
Original |
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754.82KB |
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B2-151K
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Associated Components
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Inductor: RF: Shielded: 150u: 10%: 0.79M: 49: 215m |
Original |
PDF
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53.27KB |
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B2151PD--H9B000233U1930
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Harvatek
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3.0 (L)2.0 (W) 1.0 (H) MM PD |
Original |
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916.32KB |
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B2151PT--H9B000533U1930
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Harvatek
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3.0(L)X 2.0 (W)X 1 (H) MM PT |
Original |
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903.4KB |
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B2155
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Pulse Engineering
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Inductor: Filt |
Original |
PDF
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65.23KB |
2 |
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B2155T
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Pulse Engineering
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Inductor: Filter: 2 |
Original |
PDF
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65.23KB |
2 |
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B2156
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Pulse Engineering
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ADSL LINE TRANSFORMER |
Original |
PDF
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76.67KB |
1 |
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B2157
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Pulse Engineering
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ADSL LINE TRANSFORMER |
Original |
PDF
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76.67KB |
1 |
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B2157T
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Pulse Engineering
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ADSL LINE TRANSFORMER |
Original |
PDF
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76.67KB |
1 |
B2150B
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode in SMB/DO-214AA package, rated for 150V to 200V repetitive peak reverse voltage, 2.0A average forward current, low forward voltage drop, with guard ring die construction and 88pF typical junction capacitance.Surface mount Schottky barrier diode in SMB/DO-214AA case, rated for 150-200V repetitive peak reverse voltage, 2.0A average forward rectified current, with low forward voltage drop and guard ring die construction for reliability. |
Original |
PDF
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KMB215F
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Microdiode Semiconductor
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Schottky Surface Mount Flat Bridge Rectifier, voltage range 40 to 200 V, forward current 2.0 A. |
Original |
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SB2150
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode SB2150 with 2.0A average forward current, 150V repetitive peak reverse voltage, low forward voltage drop, high surge current capability, and operating junction temperature up to 150°C. |
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B2150B
