B14 MARKING Search Results

SMFB14

Abstract: MARKING B14
Contextual Info: SEMICONDUCTOR B14 MARKING SPECIFICATION SMF PACKAGE 1. Marking method Laser Marking B14 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark B14 SMFB14 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

EMG 75-B14

Abstract: phoenix contact 28 39 33 4
Contextual Info: Extract from the online catalog EMG 75-B14 Order No.: 2947381 Custom circuit module, consisting of housing, MKDS 3 connection terminal blocks and PCB Product notes WEEE/RoHS-compliant since:

diode b14

Abstract: marking b14 diode B14 diode PCB terminal blocks diode on b14 EMG datasheet mkds TAG Semiconductor
Contextual Info: Extract from the online catalog EMG 75-B14 Order No.: 2947381 Custom circuit module, consisting of housing, MKDS 3 connection terminal blocks and PCB Product notes WEEE/RoHS-compliant since:

BMOD0063

Abstract: Radsok 0462-201-20141 DTM06-08SA Diode Mark B14 trolleys J1939 diode b14 ISO16750 marking b14 diode
Contextual Info: DATASHEET HTM HEAVY TRANSPORTATION SERIES 125 V MODULE BMOD0063 P125 B14/B24/B04 BMOD0063 P125 B33 FEATURES AND BENEFITS • CAN Bus digital monitoring and communications • Highest power performance available • Over 1,000,000 duty cycles • Temperature and voltage monitoring

emg block diagram

Abstract: diode b14 mkds EMG 75-B14
Contextual Info: Extract from the online catalog EMG 75-B14 Order No.: 2947381 Custom circuit module, consisting of housing, MKDS 3 connection terminal blocks and PCB Product notes WEEE/RoHS-compliant since:

j1939 connector

Abstract: Radsok 0462-201-20141 BMOD0063 DEUTSCH connectors DTM06 DTM06-08SA J1939 marking WM MS27488-20-1
Contextual Info: DATASHEET HTM POWER SERIES 125 V MODULE BMOD0063 P125 B14 BMOD0063 P125 B24 FEATURES AND BENEFITS • CAN Bus digital State of Health monitoring and communications • Highest power performance available • Over 1,000,000 duty cycles • Temperature and voltage monitoring

Contextual Info: Tachogenerators Shaft ø6 mm with synchro lange Nominal voltage 7.15 VDC KTD 2-. B14 Features – High response speed – Open circuit voltage 7.15 mV per rpm – Shaft ø6 mm with synchro lange – Wide rotation speed range – Recognition of sense of rotation

OTAX

Abstract: 280-T001 SD-33476-181 SD-33476-161 MX150 USCAR 5 33486-1601
Contextual Info: =?OUND FOR NNECTOR .EARANCE B23 ADDED DRAFT DIRECTION SYMBOL 088 -25-11 LATCH HEIGHT AT VIEW OF BACK ANGLE B19 ^DDED ¿X 0.8D5 I»IP20 |a|b|AT BASE 088 BLADE TERMINAL5 BLADE TERMINAL5 088 B16 ADDED|-G-| 088 B14 REMOVED SHORTING BAR NOTE -04-10 088 B12 ADDED NOTE 9

Contextual Info: TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.6 Ω Qg 12.6 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TSM70N900 700V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 700 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Omni-Polar

Contextual Info: TSH248 Micropower Omni-Polar Hall Effect Switch TSOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TSH248 Hall-effect sensor is a temperature stable, stress-resistant, micro-power switch. Superior hightemperature performance is made possible through a dynamic offset cancellation that utilizes chopperstabilization. This method reduces the offset voltage normally caused by device over-molding, temperature

N-Channel

Abstract: marking b14 diode B14 DIODE DIODE B14 TSM6N60CP
Contextual Info: TSM6N60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 1.25 @ VGS =10V 6 Features Block Diagram ● High power and current handing capability. ● Low RDS(ON) 1.25Ω (Max.)

TSM7N65A

Contextual Info: TSM7N65A 650V N-Channel Power MOSFET ITO-220 Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS 650 V RDS on (max) 1.45 Ω Qg 27.8 nC Block Diagram Features ● Low RDS(ON) 1.2Ω (Typ.) ● ● ● Low gate charge typical @ 27.8nC (Typ.)

Contextual Info: TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 12 VGS = 4.5V 17 Qg Features mΩ 3.6 nC

Contextual Info: BC807-16W/-25W/-40W Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: TS19705 Single-Stage PFC Primary-Side-Regulation LED Driver SOT-26 Pin Definition: 1. Compensation 2. Ground 3. Current Sense 4. Output 5. VCC 6. DMG Description TS19705 is a primary-side-regulation with Fly-back control IC with active power factor correction function for LED

D02N

Abstract: 075 B02 X0050
Contextual Info: A COMPANY OF M O DELS N T H D , N T H E , N T H P N TC T h e rm is to rs U n c o a te d D isc, C urve 1 = 200Q to 3 0 ,0 0 0Q C urve 2 = 25* >to 5 ,0 0 0 fí, C urve 14 = 2.5« >to 500Q FEATURES • Resistance tolerance of ± 1% thru ± 20% are available and may be

N-Channel

Contextual Info: TSM2328 100V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 100 V RDS on (max) 250 mΩ Qg 11.1 nC Block Diagram Features ● Low RDS(ON) 250mΩ (Max.) ● Low gate charge typical @ 11.1nC (Typ.)

Contextual Info: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

RJ102

Contextual Info: A COMPANY OF PRELIM INARY - MODEL NTHD NTC Therm istors U ncoafted D isc, C urve 1 4 S e rie s = 2.5Q to 50 0Q FEATURES • Resistance tolerance of ± 1% thru ± 20% are available and may be specified at 25°C or any temperature within the operating range.

Contextual Info: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on

Contextual Info: BAS19W/20W/21W Taiwan Semiconductor Small Signal Product SOT-323 100-250V/200mA Switching Diode FEATURES - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant - Fast Switching Speed - General purpose switching application SOT-323

NPN Transistor 450v 1A To-92

Contextual Info: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

B14 ZP

Abstract: b14 smd diode diode B14 zp B14 zp diode
Contextual Info: TSZL52C2V4 - TSZL52C39 CREAT BY ART 200mW SMD Zener Diode Small Signal Product Features 1005 ◇ 200mW power dissipation ◇ High voltages form 2 - 39 V ◇ Designed for mounting on small surface ◇ Extremely thin / leadless package ◇ Pb free product Mechanical Data