B12 DIODE Search Results

TSX NANO CABLE

Abstract: TSX NANO PL7-07 SES N 2402 capteur LDR TSX 07 31 2428 TSX NANO CABLE TSX 07 TSX 07 31 1628 GMOV schneider pl7
Contextual Info: B12 Automatismes programmables industriels Automates TSX Nano Automates TSX Nano Introduction Le TSX Nano est un automate programmable au service des petits automatismes présent dans tous les secteurs d’activité. Ses caractéristiques principales sont la

Contextual Info: 12E D I SANYO SEMICONDUCTOR CORP 7 cH 7 Q 7 b 0003530 5 '1|!b12Ö§ 3054A M onolithic Digital IC High-Voltage High-Current Darlington Driver 1904B Functions and Features . 4-channel, high-voltage 65V , high-current (1.5A) Darlington driver . PNP input low-active type

lm2490

Abstract: lm2490 5V regulator schematic diagram 12V to 3V dc voltage regulator LM2990 lm2490 -5 10801 LM2940 LM2990S-15 LM2990T-12 LM2990T-15
Contextual Info: LM2990 Negative Low Dropout Regulator General Description The LM2990 is a three-terminal low dropout 1 ampere negative voltage regulator available with fixed output voltages of b5 b5 2 b12 and b15V The LM2990 uses new circuit design techniques to provide low dropout and low quiescent current The dropout voltage

Contextual Info: 020 SPDT DC TO 18 SMA 023DNH SPDT, HOT DC TO 36 N 123 SPDT DC TO 18 SMA FAILSAFE, 28V ✓ 025-A234-A1D-4C0 123D SPDT DC TO 18 SMA FAILSAFE, 28V ✓ 026-A12-A1D-4C0 123T SPDT DC TO 18 SMA FAILSAFE, 28V 020-B2-A1D-4A0 123L SPDT DC TO 18 SMA LATCHING, 28V 026-B12-A1D-4A0

RM3 transistors

Abstract: B13 transistors
Contextual Info: BIPOLAR TRANSISTORS E q u ivalen t Circuit F W D : F ree w h e e l d io d e S U D . S p e e d u p d io d e F R D : F ast re c o v e ry d iode Fig. A1 Fig. B1 Fig. B2 Fig. B3 Fig. B4 Fig. B5 Fig. B6 Fig. B8 Fig. B9 Fig. B11 Fig. B12 D io d e Diode Fig. B10

Contextual Info: RF2312
 
  

      • CATV Distribution Amplifiers • Laser Diode Driver • Cable Modems • Return Channel Amplifier • Broadband Gain Blocks • Base Stations 3 The RF2312 is a general purpose, low cost high linearity

DIODE W1 SMD

Abstract: DIODE B12 B12 DIODE smd diode code B12 W1 diode diode w1 TSS0230L smd diode w1 smd diode b12 smd diode code A
Contextual Info: TSS0230L SMD Schottky Barrier Diode Small Signal Diode 0402（DFN1006） Features Halogen free low forward voltage Designed for mounting on small surface Extremely thin/leadless package Majority carrier conduction Green compound Halogen free with suffix "G" on

marking B12 diode SCHOTTKY

Abstract: DIODE B12 smd diode code B12 B12 DIODE smd marking b12 marking B12 diode smd diode b12 diode marking code B12 TSC Date Code marking smd diode marking code g
Contextual Info: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C —Ultra smail mold type,high reliability,low IR low VF —Surface device type mounting D —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: RB520G-30 Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-723F B Features A C ­Ultra smail mold type,high reliability,low IR low VF ­Surface device type mounting D ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate

transistor package SOT-723

Abstract: SOT-723 723 ic
Contextual Info: 2SA2029-Q/R/S PNP bipolar Transistor Small Signal Diode SOT-723 A F B E Features Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 diode marking code B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

marking B12 diode SCHOTTKY

Abstract: MBRS120T3 marking b12 rectifier diode B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: TESDC24V Bi-directional ESD Protection Diode Small Signal Diode SOD-323 Features —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) —Protects one birectional I/O line —Working Voltage : 24V —Pb free version, RoHS compliant, and Halogen free

DIODE B12 51

Abstract: heat exchanger power led heat sink ASM01C020 ASM14 australia heat sink ASM02C040 ASM05C060 44In42Sn14Cd
Contextual Info: Industrial Microphotonics Company CW Laser Diode Array Submodules SILVER BULLET TM • Packaged 1, 2, 3 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm PRODUCT CHARACTERISTICS The Silver BulletTM is a fundamental building block for constructing high-power diode

DIODE B12

Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

Diode Mark B12

Abstract: B12 diode DIODE B12 marking B12 diode ERB12-02 ERB12-06 ERB12 B12 mark diode marking code B12 DIODE ERB12
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

ERB12-02

Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

MBD4448HSDW

Abstract: mbd4448ht MBD4448
Contextual Info: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications Pb free version and RoHS compliant

BAV99W RFG

Contextual Info: BAV99W Switching Diode Array Preliminary Small Signal Diode SOT-323 A F B Features E Surface device type mounting Moisture sensitivity level 1 C G D Matte Tin Sn lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on

marking B12 diode SCHOTTKY

Abstract: b12 marking MBRS120T3 DIODE B12 51 DIODE B12 B12 diode b12 diodes on semiconductor marking B12 diode
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay

Mbd4448

Abstract: W1 sot 363 HSDW Sot-363 11* SOT-363 mbd4448ht 208 SOT-363 MBD4448HTW MBD4448HAQW P0 sot 363
Contextual Info: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications Pb free version and RoHS compliant

Contextual Info: TSZU52C2V0 – TSZU52C39 Pb RoHS 150mW SMD Zener Diode COMPLIANCE 0603 Features ­ ­ ­ ­ ­ 150mW Power dissipation. High voltages from 2 ~ 39V Designed for mounting on small surface Extremely thin/leadless package Pb free product Mechanical Data ­ ­

DIODE B12

Abstract: B12 diode CCD77-00 DIODE B12 45 21-B12 Scientific Imaging Technologies essex 8027 e2v ccd ccd 512 x 512
Contextual Info: CCD77-00 Front Illuminated High Performance IMO Device FEATURES * 512 by 512 Image Format * Image Area 12.3 x 12.3 mm * Full-Frame Operation * 24 mm Square Pixels * Low Noise Output Amplifiers * 100% Active Area * Inverted Mode Operation APPLICATIONS * Spectroscopy

ZENER B18

Abstract: b18 zener
Contextual Info: BZX55B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Zener Current see Table “ Characteristics ” Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.