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    B1020A TRANSISTOR Search Results

    B1020A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    B1020A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B1020A transistor

    Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A transistor PDF

    B1020A

    Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A PDF

    B1020A

    Abstract: B1020A transistor 2SB1020A 2SD1415A
    Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A B1020A transistor 2SB1020A 2SD1415A PDF

    B1020A

    Abstract: 2SB1020A 2SD1415A
    Contextual Info: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)


    Original     		2SB1020A 2SD1415A B1020A 2SB1020A 2SD1415A PDF