B-408 DIODE Search Results

B-408 diode

Abstract: ic 4081 pin diagram 230v AC to 30V AC converter circuit diagram ic 4081 230v AC to 30V dC converter circuit diagram L9 zener 9.1 ac to dc converters adjustable to 48 vdc Pin Diagram of ic 4081 VB408 VB408-1
Contextual Info: VB408, VB 408B V B 408-1/ V B 408FI HIGH VOLTAGE LINEAR REGULATOR POWER I.C. T A R G ET DATA TYPE ^ V IN,OUT him VOUT 400 V 40 mA 1.25 to V ,n-30 V VB408 VB408-1 VB408FI VB408B • INPUT VOLTAGE UP TO 400 V DC OR 285 V RMS RECTIFIED ■ OUTPUT VOLTAGE ADJUSTABLE FROM 1.25

JY 222 M capacitor

Contextual Info: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408

Contextual Info: FEB i 2 1993 yi/iyjxi>i/i 19-4725; Rev 0; 12/91 8-Channel/Dual 4-Channel High Perform ance CMOS Analog M ultiplexers _ General Description The D G 408/D G 409 are fa b rica te d with M axim ’s new im proved silicon gate process. These m uxes offer low on

CEM5508

Abstract: 550A 5508
Contextual Info: 2 SE D • b ? T 0 4 S7 □ □ □ Q 3t3l 1 ■ ON CHIP SYSTEMS T ~ 1 3 -4 ^ CURTIS ELECTROMUSIC SPECIALTIES 110 Highland Ave. LOS Gatos, C A U S A 408 395-3350 TLX 499-2868 C E M 5 5 0 8 OCTAL SAMPLE & HOLD Preliminary, April 1987 Description The CEM 5508 is an 8 channel multiplexed Sample and Hold intended

B-408 diode

Contextual Info: _ SÌ4832DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PRODUCT SUMMARY Rds{on} (&) tD |A) 0.018 @ VGS= 10 V ±9 .0 0.028 @ VGS^ 4.5 V ±7.3 30 p\0 s & a SCHO TTKY PRODUCT SUMMARY Vos (V) V « ,w

B-408 diode

Abstract: MIL-STD-883 method 3015 15kV
Contextual Info: PRELIMINARY CSPESD304 4-Channel ESD Array in CSP Features Product Description • • The CSPESD304 is a quad ESD transient voltage supression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge

M08-FET

Abstract: 5102 mosfet
Contextual Info: SÎ4833DY_ Vishay Siliconix P-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PRODUCT SUMM ARY V w tV ) r DS{on| i& \ I d (A) 0.085 @ V a s = “ 10 V ± 3 .5 0.180 @ V q S ss - 4 .5 V ± 2 .5 -3 0 p \o s SCHO TTKV PRODUCT SUMM ARY

Contextual Info: SI6923DQ VISHAY Vishay Siliconix P-Ch 2.5-V G-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) r DS(ON) -2 0 I d (A) (& ) 0.050 @ VGS = -4 .5 V ±3 .5 0.085 @ VGS = -2 .5 V ±2 .7 S C H O TTK Y PRODUCT SUM M AR Y V k a (V)

Contextual Info: SÌ4812DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PR OD UC T SU M M AR Y V o»M 30 Id {A) R d s (Om) (& l O.Otfi @ Vqq = 10 V ±9 .0 0.028 @ VGs ~ 4-5 V ±7 .3 p \0 s & SCHO TTKY PRODUCT SUMM ARY Voson V«o (V) DIODE FORWARD VOLTAGE

Contextual Info: Si4812DY VISHAY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) 30 r DS(ON) (& ) I d (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 S C H O TTK Y PRODUCT SUM M ARY VSD (V) VDS (V)

mosfet 408 80

Contextual Info: _ SÌ4810DY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M OSFET PRODUCT SUMM ARY V d* (VI 30 Rosjon ) (ß ) lo (A) 0,0135 @ V q S = 10 V ±10 0.020 @ VGS = 4.5 V ±8 p \0 s iÖ^ SCHO TTKY PRODUCT SUMM ARY

Contextual Info: SÏ4832DY - SNicönix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O SFET PRO DU CT SU M M AR Y V ds (V) r DS(ON) (-2) I d (A) 0.018 @ V GS = 10 V ± 9 .0 0.028 @ V GS = 4.5 V

AP209

Abstract: D006 DN006 PACDN006 PACDN006M PACDN006S PDN006S 8 soic pcb footprint
Contextual Info: PACDN006 6 Channel ESD Protection Array Features Product Description • • The PACDN006 is a diode array designed to provide 6 channels of ESD protection for electronic components or sub-systems. Each channel consists of a pair of diodes which steers an ESD current pulse to either the

Contextual Info: SÏ4812DY - SNicönix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O SFET PRO DU CT SUM M ARY V ds (V) r DS(ON) (-2) Id (A) 0.018 @ V GS = 10 V ± 9 .0 0.028 @ V GS = 4.5 V

Contextual Info: SÏ4810DY V1^ A Y - SNÏcônix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O SFET PRO DU CT SUM M ARY V ds (V) r D S(O N) (-2) (A) Id 0 .0 1 3 5 @ V g s = 1 0 V

CRCW040210R0F

Abstract: ECSH0GY106R SY88216L TP10
Contextual Info: SY88216L Electrical Evaluation Board General Description Features This electrical evaluation board allows for evaluating the performance of the SY88216 burst mode laser diode driver while driving passive load. Datasheets and support documentation can be found on

Contextual Info: C A L IF O R N IA M IC R O D E V IC E S PAC DN016 ►► ► ► ► 6 CHANNEL ESD PROTECTION ARRAY W ITH ZENER RAIL-CLAMP Features Applications • • • • • • • Six channels of ESD protection Integral Zener diode clamp to suppress supply rail transient

MMTB3906WT1

Abstract: ECSH0GY106R SY88212L TP10 SY88216 apc driver for laser diode 67-1636-1-ND
Contextual Info: SY88212L Electrical Evaluation Board General Description Features This electrical evaluation board allows for evaluating the performance of the SY88212 laser diode driver while driving passive load. Datasheets and support documentation can be found on Micrel's web site at: www.micrel.com.

pdic dvd

Abstract: F1H1 f2h2 photo site atmel rousset Detector "Detector IC" CD DVD Detector "Detector IC" CD DVD 14 PIN ATR0874 ATR0874-PZQW QFN16L DVD RW circuit diagram
Contextual Info: Features • • • • • • • • 650 nm and 780 nm Wavelengths Supported 150 MHz Data Channel Bandwidth Fast Settling Time 4 Configurable Gain Steps 12 Photo Diodes Low Offset Voltage Power-down Mode Pb-free Optical 16-pin Package Applications •

Slim Dvd rw diagram

Abstract: ATR1874-PZQW F1H1 ATR1874 QFN16L f2h2 atmel 650 atmel 006 photo site atmel rousset
Contextual Info: Features • • • • • • • • 650 nm and 780 nm Wavelengths Supported 150 MHz Data Channel Bandwidth Fast Settling Time 4 Configurable Gain Steps 12 Photo Diodes Low Offset Voltage Power-down Mode Pb-free Optical 16-pin Package Applications •

Lovoltech

Abstract: LD1010DA TO252-DPAK package POWERJFET pn diode LD1010D
Contextual Info: PWRLITE LD1010DA High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

Lovoltech

Abstract: PN 1204 pn diode LU1004D LD103SG6 POWERJFET 028E-02 5E02 A 673 C2 transistor
Contextual Info: PWRLITE LU1004D High Performance N-Ch Vertical POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

pn diode

Abstract: POWERJFET A 673 C2 transistor Lovoltech LD1010DA LU1010DA LD1010D jfet transistor LU1010D
Contextual Info: PWRLITE LU1010DA High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

ld1014d

Abstract: Lovoltech pn diode POWERJFET
Contextual Info: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low