B 828 TRANSISTOR Search Results

828BD

Abstract: BD NPN transistors BD 826 NPN
Contextual Info: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60

SF 829 B

Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
Contextual Info: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)

Contextual Info: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter

BF840

Abstract: BF841 transistors marking ND transistors C 828
Contextual Info: BF840 BF841 IL SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 6 2.4 J1’ .0 2 ! 0.89 0.60 0.40

.W07B

Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012
Contextual Info: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s

transistors BC 543

Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825
Contextual Info: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,

Contextual Info: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier

3654A

Abstract: at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0
Contextual Info: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier

Contextual Info: ANALOG DEVICES FEATURES Excellent Video Performance Differential Gain & Phase Error of 0.01% & 0.05° High Speed 130 MHz 3 dB Bandwidth G = +2 450 V /( jis Slew Rate 80 ns Settling Tim e to 0.01% Low Power 15 m A Max Power Supply Current High Output Drive Capability:

Contextual Info: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220

2SD1741

Abstract: 2SB1171 2SB1171A 2SD1741A ic 4604 tc 4604
Contextual Info: Power Transistors 2 S D 1 7 4 1 , 2SD1741, 2SD1741A 2 S D 1 7 4 1 A Silicon P N P Triple-Diffgsed P lanar Type P ackage Dim ensions Pow er Amplifier T V Vertical Deflection Output Pair with 2 S B 1 171, 2 S B 11 71 A • Features • High DC cu rre n t gain Iife and good linearity

C 828 Transistor

Contextual Info: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP

2SC2121

Abstract: cannon terminal g25a AC42C
Contextual Info: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications •  i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A

SOT23 marking 828

Abstract: 46 marking
Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3

Siren Sound Generator circuit diagram

Abstract: internal circuit of UM3561 siren police diagram UM3561A circuit diagram of police siren UM3561 3 machine gun sound generator police siren block diagram Siren Sound Generator 5 police Siren Sound
Contextual Info: UM3561A Three Siren Sound Generator Features A magnetic speaker can be driven by connecting an NPN transistor Power on reset • Four sounds can be selected ■ Typical 3V operating voltage * RC oscillator with an external resistor General Description The UM3561A is a low-cost, low-power CMOS LSI designed

Contextual Info: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the

GY 123

Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Contextual Info: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122

dta144es

Abstract: DTA144EU
Contextual Info: DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV h -7 > v 7-. £ / J ransistors D T A 1 4 4 E U /D T A 1 4 4 E K /D T A 1 4 4 E S D T A 1 4 4 E F /D T A 1 4 4 E L /D T A 1 4 4 E A DTA1 4 4 E V r> '^ b h7>y^^ Y ^ ' y y 7 ,^ X ' f y 3-/Transistor Switch

TIP42 philips

Abstract: T1P42B
Contextual Info: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier

Contextual Info: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.

Contextual Info: SIEMENS BUZ 305 SIPMOS Power Transistor • N channel • Enhancement mode V3I05‘56 • Avalanche-rated Pin 2 Pin 1 Type Vos BUZ 305 1000 V 7.5 A R S(on) 1n Pin 3 D G S Package Ordering Code TO-218AA C67078-S3134-A2 Maximum Ratings Parameter Symbol Continuous drain current

TIP41

Abstract: TIP42 TIP42B TIP42 applications TIP42 philips T3321
Contextual Info: TIP42;A TIP42B;C PHILIPS INTERNATIONAL 5bE D • 711GÖ2b □043534 Ofll « P H I N 'T'—3 3 ~ 2 I SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in general o u tp u t stages o f am plifier circuits and switching applications. NPN complements are TIP41 series.

0025PF

Contextual Info: TOSHIBA 3SK153 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL D U A L GATE MOS TYPE 3 S K 1 53 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF W ID E B A N D RF AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9 - Û 3 • Superior Cross Modulation Performance.

Contextual Info: BUK663R7-75C N-channel TrenchMOS FET Rev. 01 — 6 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been