B 1566 TRANSISTOR Search Results

IRf 48 MOSFET

Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
Contextual Info: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors

MC1566L

Abstract: MC1466L equivalent MC1566 1466 HO MC1466 MC1466L schematic of mc1466 Transistor B 1566 MC 1466 L MJE340 REGULATOR
Contextual Info: MOTOROLA Specifications and Applications Information PRECISION WIDE-RANGE VOLTAGE and CURRENT REGULATOR MONOLITHIC VOLTAGE AND CURRENT REGULATOR . SILICON MONOLITHIC INTEGRATED CIRCUiT This unique "floating" regulator can deliver hundreds of volts — limited only by the breakdown voltage of the external series

Contextual Info: IS0C0P1 C O d P O N E N T S LTD 7SC J> m HööbSlD ODOOElt, 30e! • ISO 4 8 8 6 5 1 0 ISOCOM INC 75C 0 0 2 1 6 D r-V Z -iS ’ IS660, IS661, IS662 HIGH VOLTAGE PHOTO DARUNGTON ISOLATORS ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage Tem perature. — 55° Cto + 1 5 0 ° C

Contextual Info: • ^53^31 QD2Sbn T3T H A P X N AUER PHILIPS/DISCRETE BSS87 b7E ]> J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other

TRANSISTOR ba 751

Abstract: BSS87 marking JC MOS MARKING KA Transistor B 1566 S2 MARKING TRANSISTOR Marking BA SOT89
Contextual Info: • L.bSB'm OQESbn T3T H A P X N AflER P H I L I P S / D I S C R E T E b?E BSS87 D - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other

Contextual Info: SIEMENS BFP 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor 1564

Abstract: Transistor B 1566
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fietd-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

thermal analysis on pcb

Abstract: LM25576 LM2590HV-AQ LM5576 Transistor B 1566 1566 Transistor 49/54ACT3301 die national semiconductor
Contextual Info: National Semiconductor Application Note 1566 Frederik Dostal Applications Engineer February 2007 To reduce time-to-market and component count, power management ICs with integrated power transistors such as National’s new SIMPLE SWITCHER regulators LM5576,

D2395

Contextual Info: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.

MPS 4355 transistor

Abstract: mps 1132 MPS 3019 K 3053 TRANSISTOR TO-237 MICRO 3020 transistor
Contextual Info: 6091788 MICRO ELECTRONICS CORP ~~ä5 _ * 82D 00661 DE |bGT17fifl GGGDbbl 2 | Medium Power Am plifiers and Switches X P O L A R IT Y M AXIM UM R A T IN G S CASE PN PN PN PN PN 3568 3569 3638 3638A 3641 N N P P N TO-92A TO-92A TO-92A TO-92A TO-92A 625 625 625

SN7401

Abstract: SN5401 irl 4905 2857 transistor
Contextual Info: CIRCUIT TYPES SN5401, SN7401 QUADRUPLE 2-INPUT POSITIVE NAND GATES WITH OPEN-COLLECTOR OUTPUT] schematic (each gate J OR N DUAL-IN-LINE PACKAGE (TOP VIEW) W FLAT PACKAGE (TOP VIEW) 4A o cc S (H ) ‘Æ GND 38 (E ) (î? ) r h ß u 4Y f e f - i s i i

2n3904 smd pin configuration

Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
Contextual Info: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC

Contextual Info: ô /• ^-THOMSON 07C D I QÜÎ4b31 5 I C O S /M O S " INTEGRATED CIRCUIT h c c /h c f Î2^ 41C 7929225 •- * 4oi3B _ :_ u 0864^ ■ r— T -4 6 -0 7 -0 8 S G” S SEM ICONDUCTOR CORP DUAL 'D '-T Y P E FLIP-FLOP • • S E T - R E S E T C A P A B IL IT Y

Contextual Info: S G S-THOHSON 07E D ri ÜC1524A 1 I 7 ^ 5 3 ? 73C 186 52 D aiflb SM 3 I D ; 7 = v 5 ^ -/7 « 3 7 A UC3524A LINEAR INTEGRATED CIRCUITS PRELIM IN A RY DATA ADV AN CED REGULATING PULSE WIDTH MODULATORS • FULLY IN T E R C H A N G E A B L E W ITH SG1524 • PR E C ISIO N R E F E R E N C E ± 1%

LM3900

Abstract: LM3301N power amplifier circuit diagram with ic lm3900 an lm3900 lm2900
Contextual Info: bSDllSM Ü07SS4S T73 « N S C 2 LM2900/LM3900/LM3301 SflE D NATL SEMICOND LINEAR gg National Semiconductor 'T - 'T \ - I ° LM2900/LM3900/LM3301 Quad Amplifiers G eneral Description Features The LM2900 series consists of four independent, dual input, Internally compensated amplifiers which were designed

LM3900

Abstract: audio mixer ic lm3900 quad comparator LM3900 an lm3900 national LM3900 of bistable multivibrator using transistor mixer lm3900 sawtooth generator lm2900 LM390
Contextual Info: LM2900/LM3900/LM3301 ¡^National ÆM Semiconductor LM2900/LM3900/LM3301 Quad Amplifiers General Description Features The LM2900 series consists of four independent, dual input, internally compensated amplifiers which were designed specifically to operate off of a single power supply voltage

CI 4013B

Abstract: CI 4013 4013B uc 4013 HCC4013BK circuit diagram 4013 hcf4013 4013BE 4013 bf 4013
Contextual Info: ô /• ^-T H O M S O N 07C D I QÜÎ4b31 5 I C O S / M O S " INTEGRATED CIRCUIT h c c /h c f Î2^ 41C 7929225 S G” S • - * S E M IC O N D U C T O R 4oi3B _ :_ u 0864^ ■ r— T-46-07-08 CORP DU AL 'D '- T Y P E FLIP-FLOP • S E T -R E S E T C A P A B IL IT Y

Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

5962-07A06

Abstract: tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 HXBUSX18
Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

TGAM 1

Abstract: 2000w power amplifier circuit diagram CRYSTAL ITT TCXO 4 5 MHZ UMA10 TCXO 10 MHz ITT AM13 UMA1020M TCXO ITT
Contextual Info: Philips Semiconductors Preliminary specification Low-voltage dual frequency synthesizer for radio telephones UMA1020M FEA TU R ES The principal synthesizer operates at VCO input frequencies up to 2.4 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

kc 5188

Abstract: 7805 Ka 2535 data sheet
Contextual Info: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.