AYW MARKING CODE IC Search Results

AYW marking code IC

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP-5 CASE 483-02 ISSUE H 5 DATE 18 MAY 2007 1 SCALE 2:1 NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES

TRANSISTOR AH-16

Abstract: AH-16 transistor TRANSISTOR AH-10 AH-16 npn AH MARKING SOT223 ah-16 sot 223 marking code AH BCP53-16T1G BCP53-10T1G Transistor AH10
Contextual Info: BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. •ăHigh Current: 1.5 Amps

Contextual Info: NCP785 Product Preview Wide Input Voltage Range 5 mA Ultra-Low Iq, High PSRR Linear Regulator http://onsemi.com The NCP785 is a high−performance linear regulator, offering a very wide operating input voltage range of up to 450 V DC, with an output current of up to 5 mA.

AYW marking code IC

Abstract: 306 marking code transistor MARKING KV SOT-223 BSP16T1 BSP19AT1 BSP19AT1G
Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

transistor P2F

Abstract: ON MARKING P2F sot223 p2f PZT2907AT1G SOT-223 P2f p2F 45 PZT2222AT1 PZT2907AT3 PZT2907AT1 PZT2907AT3G
Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

MC74VHC1GT50DTT

Contextual Info: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter TTL−Compatible Inputs Features • • • • • • • • • • Designed for 1.65 V to 5.5 VCC Operation High Speed: tPD = 3.5 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C

ncp785ah33

Contextual Info: NCP785A Product Preview Wide Input Voltage Range 10 mA Ultra-Low Iq, High PSRR Linear Regulator http://onsemi.com The NCP785A is a high−performance linear regulator, offering a very wide operating input voltage range of up to 450 V DC, with an output current of up to 10 mA.

A114

Abstract: A115 C101 JESD22 M74VHC1GT04DFT1G MC74VHC1GT04 MC74VHC1GT04DFT1
Contextual Info: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 3.8 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C http://onsemi.com MARKING DIAGRAMS

Contextual Info: MC74VHC1GT02 Single 2−Input NOR Gate/ CMOS Logic Level Shifter LSTTL−Compatible Inputs Features • • • • • • • • • High Speed: tPD = 4.7 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V

4030p

Abstract: NJT4030P NJT4030PT1G NJT4030PT3G
Contextual Info: NJT4030P Preferred Device Bipolar Power Transistors PNP Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc hFE

4031N

Abstract: NJV4031NT1G NJV4031NT3G
Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc

NSV9435T1G

Abstract: 306 marking code transistor
Contextual Info: NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage −        VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 125 (Min) @ IC = 0.8 Adc

4030p

Abstract: NJV4030PT1G
Contextual Info: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

AYW marking code IC

Abstract: BF721T1G 306 marking code transistor
Contextual Info: BF721T1G PNP Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -300 Vdc Collector - Base Voltage VCBO -300

SOT-353 MARKING vn

Contextual Info: MC74VHC1GT32 2−Input OR Gate/CMOS Logic Level Shifter Features • • • • • • • • • High Speed: tPD = 3.5 ns Typ at VCC = 5.0 V Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load

4030p

Abstract: NJT4030P NJT4030PT1G NJT4030PT3G
Contextual Info: NJT4030P Preferred Device Product Preview Bipolar Power Transistors PNP Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • High DC Current Gain −

SP19A

Abstract: AYW marking code IC BSP16T1 BSP19AT1G
Contextual Info: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

AYW marking code IC

Abstract: Transistor BFR 38 BF720T1G BF720T3G
Contextual Info: BF720T1G, BF720T3G NPN Silicon Transistor Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 300 Vdc Collector - Base Voltage VCBO

BCP68

Abstract: BCP69T1 BCP69T1G
Contextual Info: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. http://onsemi.com

BCP69T1G

Abstract: AYW marking code IC
Contextual Info: BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.

BCP68T1G

Abstract: AYW marking code IC BCP68T3G BCP69T1
Contextual Info: BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features

Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE

Contextual Info: BSP52T1G, BSP52T3G NPN Small-Signal Darlington Transistor This NPN small signal Darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

NSVBCP56

Contextual Info: BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features