AXT VCSEL Search Results

VX-CA14

Abstract: AXT VCSEL
Contextual Info: AXT PRODUCT INFORMATION Preliminary 850 nm Two-top Contact 1x4 Oxide VCSEL Specs High-speed datacom & general purpose, >2.5Gbps Dimension (1100)X(460)X(150) µm³ Parts number: VX-CA14 1. Optical and Electrical Characteristics Parameter Symbol Min. TYP.

aperture

Abstract: PX-CT11
Contextual Info: AXT PRODUCT INFORMATION Standard 850nm 10 Gbps GaAs PIN Photodiodes Part number: PX-CT11 Features: • • • • 10 Gbps operation at –3V to 0V Two top side wire-bond pads Large aperture size Extremely low dark current, capacitance, and excellent responsivity

VCSEL die bonding

Abstract: SATURN PY-CM11
Contextual Info: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.

Contextual Info: AXT PRODUCT INFORMATION Preliminary 850 nm two-top contact 1x12 oxide VCSEL Specs High-speed datacom & general purpose, >2.5Gbps Dimension (3100)X(460)X(150) µm³ Parts number: VX-CA1C 1. Optical and Electrical Characteristics Parameter Symbol Min. TYP.

VX-CT11

Abstract: SATURN AXT VCSEL
Contextual Info: AXT PRODUCT INFORMATION Preliminary 10 Gb/s 850 nm Oxide VCSEL Chips High-speed datacom & general purpose, 10Gbps Parts number: VX-CT11 1. Optical and Electrical Characteristics Parameter Symbol Min. TYP. Max. Unit Peak Wavelength λp 830 845 860 nm If = 8mA@RT

PX-CK11

Contextual Info: AXT PRODUCT INFORMATION Standard 850nm 1~4 Gbps GaAs PIN Photodiodes Part number: PX-CK11 Features: • • • 1~4 Gbps operation at –3V to 0V Two top side wire-bond pads Extremely low dark current, capacitance, and excellent responsivity Characteristics T=300K

VCSEL die

Abstract: AXT VCSEL
Contextual Info: AXT PRODUCT INFORMATION High-power 850 nm Implant VCSEL Specs High-speed datacom & general purpose, >1.25Gbps Available in singlet die and m x n Array forms Dimension (250 X m)X(305 X n)X(120) µm³ (m=1,…4; n=1,…12) Parts number: VX-CHmn (m=1,…4; n=1,…,9,A,B,C)

EI-40

Abstract: EI 40
Contextual Info: AXT Product Information 1310 nm FP Laser Diode Chip Specification Absolute Maximum Ratings Parameter Symbol Ratings Optical Output Power Po 10 mW Reverse Voltage LD Vrl 2V Operation Temperature Vrl -40 to +85 ° C Storage Temperature Tsk. -40 to 125 ° C

1310 vcsel

Abstract: K1290 1310-nm-FP-Laser-diode-Chip ut 0820 fp diode nm laser diode chip
Contextual Info: AXT Product Inform ation 1310 nm FP Laser D iode Chip Specification A bsolute M axim um Ratings Param eter Symbol Ratings Optical Output Power Pu 10 mW Reverse Voltage LD V rl 2V Operation Temperature To -40 to 85 °C Storage Temperature Tsk. -40 to 125 °C

GaAs array, 850nm

Abstract: diode array die
Contextual Info: AXT PRODUCT INFORMATION Standard 1~4 Gbps GaAs PIN Photodiodes Array Part number: PX-CKmn mxn array available m,n=1,2,3.9,A,B,C,D,… Features: • • • • • • 1-4 Gbps operation at –3 to 0 V Two top side wire-bond pads extremely low dark current, capacitance, and excellent responsivity

AXT VCSEL

Contextual Info: AXT PRODUCT INFORMATION Standard 850 nm Oxide VCSEL Specs High-speed datacom & general purpose, >2.5Gbps Available in singlet die and m x n Array forms Dimension (250 X m)X(305 X n)X(120) µm³ (m=1,…,4; n=1,…,12) Parts number: VX-COmn (m=1,…,4; n=1,…,9,A,B,C)

AXT VCSEL

Contextual Info: AXT PRODUCT INFORMATION Standard 850 nm Implant VCSEL Specs High-speed datacom & general purpose, >1.25Gbps Available in singlet die and m x n Array forms Dimension (250 X m)X(305 X n)X(120) µm³ (m=1,…4; n=1,…12) Parts number: VX-CImn (m=1,…4; n=1,…,9,A,B,C,.)

VCSEL die bonding

Abstract: PY-CT11 InGaAs 0.85 um
Contextual Info: Preliminary specification 1300/1550nm 10Gbps Gbps InGaAs PIN Photodiodes Part number: PY-CT11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time Conditions -3 V -3 V 1µA - 3 V, 1 MHz

VCSEL 1550 nm 1 Gbps

Abstract: PY-CK11
Contextual Info: Preliminary specification 1300/1550nm 1~4 Gbps InGaAs PIN Photodiodes Part number: PY-CK11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time (20%/80%) Conditions -3 V -3 V 1µA - 3 V, 1 MHz

Contextual Info: with oxidation process (Datacom, General Purposs) 1. O ptical an d Electrical Characteristics Param eter Sy m b o l M in. TYP. M ax. Unit Test C on dition 850 845 860 nm 1, = 4mAi@RT 0.5 1 nm 1, = 4m A @ R T Peak Wavelength \ Spectral W id ih (FW H M ) AÀ

Contextual Info: with ion -im plan t p ro cess (Datacom, General Purpose) 1. O p tica l a n d E le ctrica l C h a ra cteristics P a ra m ete r S ym b o l M in . TYP. M ax. 830 845 U n it Test C o n d itio n 860 nm 1. = llm A @ R T nm 1 ,- llm A @ R T Deg Full width at l/e;

Contextual Info: with ion -im plan t p ro cess (Datacom, General Purpose) 1. O p tica l a n d E le ctrica l C h a ra cteristics P a ra m ete r S ym b o l M in . TYP. M ax. U n it Test C o n d itio n Peak Wavelength K 830 845 860 nm 1. = llm A @ R T Spectral Width(rWHM) AÀ.