AX 2358 F Search Results

ic ax 2358

Abstract: AX 2358 F
Contextual Info: KS0068B 16COM/6QSEG DRIVER & CONTROLLER FOR DOT MATRIX LCD INTRODUCTION 100 Q FP T h e K S 0 0 6 8 B is a d o t m a trix L C D d riv e r & c o n tro lle r LSI w h ic h is fa b ric a te d b y lo w p o w e r C M O S te c h n o lo g y . FUNCTION • C h a ra c te r ty p e d o t m a trix L C D d riv e r & c o n tro lle r

ic ax 2358

Abstract: 0065B CMC lcd KS0063B DE 113 LCD
Contextual Info: KS0068B 16COM/6ÛSEG DRIVER & CONTROLLER FOR DOT MATRIX LCD INTRODUCTION 100 QFP-1420C The KS0068B is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • • • • • Character type dot matrix LCD driver & controller

ic ax 2358

Abstract: 74FCT7623
Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R HARRIS RCA GE INTERSIL C D 54/74FC T7623 C D 54/74FCT7623AT July 1990 Octal Bus Transceiver, 3-State B Side , Open-Drain (A Side), Non-Inverting T y p e Features: • Buttered Inputs m Typical Propagation delay:

SPS60

Abstract: 1R170 16312 1N1239 SPS60 steel 3773 P DD0003 SPS200 microsemi 1-E 380 sps2003
Contextual Info: n i C R O S E M I CO RP/ R P PI 14E D I tllt.0 4 0 DD0003? 3 | MICRO A MICROS EMI COMPANY 7~ Solid Pac High Voltage Rectifiers Six Phase Star SERIES I THEORETICAL RECOMMENDED MAX OUTPUT . D.C. OUTPUT VOLTAGE . VOLTS DC NUMBER. PART NUMBER SPSHV-16 SPSHV-20

150 watt hf transistor 12 volt

Abstract: MIL-STD-1311
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF429 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics —

Contextual Info: SN54ALS353, SN54AS353A, SN74ALS353, SN74AS353A DUAL 1 OF 4 DATA SELECTORS/MULTIPLEXERS WITH 3 STATE OUTPUTS 2 6 6 1 , APRIL 1 9 8 2 -R E V IS E D M A Y 1 9 8 6 In v e rtin g V ersions o f 'A L S 2 5 3 and 'A S 2 5 3

52AVP

Abstract: unitrode stackable rectifier
Contextual Info: UNITRODE CORP TE » ^ = 1 3 4 7 ^ 3 DD10fl03 S POWER MOSFET TRANSISTORS UFND120 U FND120 UFND123 100 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled

RF 3709 Z

Abstract: 741500 1470 LM lm 3751 81 210 w 74 7-j67 4023 Ci 23844 297500 822500
Contextual Info: SCIENTIFIC/ MINI-CIRCUITS HTE D plug-in, surface-mount • flDbflSll 0 0 0 1 3 5 3 0 2 S HISCC Frequency Mixers mo^ I C V /C I "7 LbvbL / ^7 TUF' 5 +7 dBm LO, up to +1 dBm RF TUF-5SM computer-automcated performance data typical production unit / for data of other models consult factory

DG139

Abstract: H313 DG143 DG144 DG145 DG146 DG161 DG162 VP75
Contextual Info: Intersil High-Rellabillty Products DG139, DG142 - DG146, DG161-DG164 High Reliability DUAL JFET Analog Switch GENERAL DESCRIPTION FEATURES Each package contains a monolithic driver with differen­ tial input and 2 or 4 discrete FET switches. The driver may

sn75153

Abstract: RS-422-A SN75151 SLLS082A-D2453 752B5 SN75153N D2453
Contextual Info: SN75151, SN7S153 QUAD DIFFERENTIAL UNE DRIVERS WITH 3-STATE OUTPUTS SLLS082A- D2453, DECEMBER 1978 - REVISED FEBRUARY 1893 * Meets EIA Standard RS-422-A * High-lmpedance Output State for SN75151 DW OR N PACKAGE TOP VIEW Party-Line Operation * 1A[ 1 1Y[ 2

ufnd123

Abstract: UFND120
Contextual Info: POWER MOSFET TRANSISTORS UFND120 100 Volt, 0.3 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Temperature Stability DESCRIPTION

Contextual Info: rru rm TECHNOLOGY LTC1151 Dual ±15V Zero-Drift Operational Amplifier F€flTUft€S DCSCRIPTIOfl • Maximum Offset Voltage Drift: 0.05|iV/°C The LTC1151 is a high voltage, high performance dual ■ High Voltage Operation: +18V ■ No External Components Required

ASY76

Abstract: CY7C187A JS14
Contextual Info: C Y P R ES S S E M I C O N D U C T O R ESö^bbS 0005023 3 4QE D 7 = & -2 3 -£ > r CYPRESS SEMICONDUCTOR A utom atic power-down when dese­ lected CM O S for optim um speed/pow er High speed - IS ns Low active power - 440 m\V Low stan d b y power - 220 mW

Contextual Info: /TLirKAB TECHNOLOGY LT C 115 1 Dual ±15V Zero-Drift Operational Amplifier F 6O T U IK S D CSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC1151 is a high voltage, high performance dual zero-drift operational amplifier. Thetwosample-and-hold

MT18JSF25672AY-1G1D1

Abstract: 240 unbuffered DDR3 MT18JSF25672AY-1G1 DDR3 udimm jedec
Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 SDRAM UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AY – 2GB MT18JSF51272AY – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C E) • DDR3 functionality and operations supported as defined in the component data sheet

EST 7610

Abstract: ic ax 2358
Contextual Info: M ITSU B ISH I HIGH SPEED CMOS M 74HC258P/FP/DP parafll Q UADRUPLE 2 -IN P U T DATA S E L E C T O R /M U L T IP L E X E R W IT H 3 -S T A T E O U TPU TS DESCRIPTION T h e M 7 4 H C 2 5 8 is a sem iconductor in teg rated circuit con­ PIN CONFIGURATION TOP VIEW

48an

Contextual Info: K *= ? CY7C187A SEMICONDUCTOR 65,536 x 1 S tatic R /W RA M Features Functional Description • A utom atic power-down when dese­ lected The • C M O S fo r optim um speed/power w o rd s b y 1 b it. E a s y m e m o r y e x p a n s io n is C Y7C 187A C M O S s t a t ic

54AC11245

Abstract: 74AC 74AC11245 D2957 TI0076
Contextual Info: 54AC11245, 74AC11245 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS TI0076— D2957, JULY 1987— REVISED MARCH 1990 3-State Outputs Drive Bus Lines Directly 54A C 11 2 45 IT P ACKA G E 7 4A C 11 2 45 . . . DW O R N T P ACKA G E Flow-Through Architecture to Optimize PCB

tl066

Abstract: TL066CP
Contextual Info: TL066AC, TL066C, TL066I, TL066M ADJUSTABLE LOW-POWER JFET-INPUT OPERATIONAL AMPLIFIERS D 2 4 9 4 , FEBRUARY 1 9 7 9 -R E V IS E D OCTOBER 1 9 9 0 TL066AC. TL066C. TL066I . . . D OR P PACKAGE TL066M . . . JG PACKAGE 4 D E V IC E S C O V E R C O M M ER C IA L.

0372D

Contextual Info: MOTOROLA TCA0372 SEMICONDUCTOR TECHNICAL DATA A d v a n c e Info rm atio n DUAL POWER OPERATIONAL AMPLIFIER SILICON MONOLITHIC INTEGRATED CIRCUIT DUAL POWER OPERATIONAL AMPLIFIER The TCA0372 is a m o n o lith ic circ u it inten d e d fo r use as a p o w e r

LT 989

Abstract: DIP sw 4
Contextual Info: T 1B P A LT 19 L8 C , T IB P A LT 1 9R4C, T IB P A LT 19 R 6 C , T IB P A LT 19 R 8 C H IG H -P ER FO R M A N C E LA T C H ED -IN P U T PAL CIRCUITS D2709. DECEMBER 1962 —REVISED AUGUST 1989 • High-Performance Operation . . . 30 MH* _ . . _ . _ _ . .

Contextual Info: SN54116, SN74116 DUAL 4-BIT LATCHES WITH CLEAR DECEMBER 1972 —REVISED MARCH 1988 S N 5 41 1 6 . . . J OR W PACKAG E SN 74116 . . . N PACKAGE Two Independent 4-Bit Latches in a Single Package T O P V IE W [jr O 24 3 Vcc 2 3 ] 204 1C2 C 3 22 3 2D4 1D 1 O

MT18JSF25672AZ-1G1D1

Contextual Info: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT18JSF25672AZ – 2GB MT18JSF51272AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C E) Module height: 30mm (1.18in) • DDR3 functionality and operations supported as defined in the component data sheet

TL066CP

Abstract: TL066ACP
Contextual Info: TL066AC, TL066C, TL066I, TL066M ADJUSTABLE LOWPOWER JFET-INPUT OPERATIONAL AMPLIFIERS D 2 4 9 4 , FEBRUARY 1 9 7 9 -R E V IS E D OCTOBER 1 9 9 0 TL066AC, TL066C, TL066I . . . D OR P PACKAGE TL066M . . . JG PACKAGE 4 DEVICES COVER COMMERCIAL, INDUSTRIAL. AND MILITARY