AVM Search Results

diode ax 277

Contextual Info: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S40HC1R5 Package I MTO-3P 22± aa%j T y p e No. » 5 . 0 ±0-3 \r D a te code >Tjl25°C US V f = 0.41V r +0.5 lo-o.^ 4>33±0-2 15V 4 0 A Unit • mm -, \ 2 . 0 ±0-3 S # 2 . 4 ±0-3

4A2 diode

Contextual Info: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D10SC6MR 60 V 10 A >Tjl50°C P rrs m 7 7 > 7 ,llÆ -,lb K V 'J i f f i l l >SRS;H >DC/DC m m s tf-h s oA H tg IjSfes Ttv— RATINGS Absolute Maximum Ratings a Item a E -f- Operating Junction Temperature

Contextual Info: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS SF30JC10 100V 3 0 A >Tjl50°C >7,llÆ -,lb K U S Ir = 1.0 m A > $ È jfIÎJ± 2 kV ffilI ► y -h p c , lc d RATINGS Absolute Maximum Ratings a Item a i 5 E -fSymbol Conditions iXlYrii.HX

D5S6M

Contextual Info: mm S /avM *- A'UT7 Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D5S6M 60V 5A • T jl5 0 ° C V 'J i f f ill • Prrsm 77 • 7 ,llÆ - ,lb K m •SRSÎÜ •D C /D C •W M, t f- h s OAUtg • £ < § . 7t RATINGS Absolute Maximum Ratings a i 5

d10sc4m

Contextual Info: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D10SC4M 40 V 10 A >Tjl50°C Prrsm 77 >7,llÆ-,lbK V 'J i ffill >SRS;H >DC/DC m m s t f - h s o A H tg I j S f e s Ttv— RATINGS Absolute Maximum Ratings a Item a E -f- iXlYrii.HX

Contextual Info: □IXYS DSEC 30-12A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Common Cathode and Soft Recovery V RSM V V RRM 2x15 A V RRM 1200 V t rr 40 ns TO -247 AD Type V 1200 1200 DSEC 30-12A A = Anode, C = Cathode, TAB = Cathode Symbol U rm s U avm

transistor 68675

Abstract: AVM1504D TSS 100
Contextual Info: A PLUS MAKE YOUR PRODUCTION A-PLUS AVM1504D DATA SHEET APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路㆒段 32 號 3 樓之 10. Sales E-mail: sales@aplusinc.com.tw

1253H

Contextual Info: DRAWING MADE IN AMERICAN PROJECTION "¿ “ A M /. i2sjLo:ia\aEL ORDER HUMBER /¿ V ? // . 1 -J OPT/OWL ¿2x s _/ -* /. .a /. -/ /. /. -J .V £ /. s /. /. .r /. .1 - * /. 1 2 . /¿ V P V /.S h 0 ? AVM3£e MM Of MM JM/WMf. J tl S.O 2 y.s .236 J /¿ o .¡3*/

Contextual Info: □IXYS DSS 2x121-0045B Power Schottky Rectifier lFAV = 2x120 A V rrm - 45 V VF = 0.59 V Prelim inary Data RSM V V 45 45 Symbol U miniBLOC, SOT-227 B Type RRM DSS 2x121-0045B Test Conditions Maximum Ratings 150 120 240 rms U avm U avm Tc = 100°C; rectangular, d = 0.5

Contextual Info: □IXYS DSEP 8-03A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM V V RRM 10 A V RRM 300 V t rr 30 ns TO-220 AC Type V 300 300 Symbol U rm s U avm U rm DSEP 8-03A Test Conditions 35 10 tbd A A A TVJ = 4 5 °C ; £ = 10 ms 50 Hz , sine

Contextual Info: □IXYS DSEC 30-03A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Common Cathode and Soft Recovery V RSM V V RRM 2x15 A V RRM 300 V t rr 30 ns TO -247 AD Type V 300 300 DSEC 30-03A A = Anode, C = Cathode, TAB = Cathode Symbol U rm s U avm U

ECG937M

Abstract: IC133 ECG937 ecg931 k333 IC-133 R3B4
Contextual Info: PHILIPS E C G INC tbS3TEfl 00 04373 17E ECG937, ECG937M JFE T Input Op Amplifier Sem ico nd uctors Features • Wider bandwidth decompensated Avmin^C • Low Input bias current — 30 pA • Low input offset current — 3.0 pA • Low Input offset voltage — 1.0 mV

Contextual Info: GA040TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

Contextual Info: GA060TH65 Silicon Carbide Thyristor Features VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Package • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT-227 (ISOTOP) base plate form factor

4*3 MATRIX KEYPAD

Abstract: of 4*3 Matrix Keypad keypad 4*3 keypad diode matrix concave KEYPAD on 707 diode MARKING 707 KEYPAD telephone telephone KEYPAD
Contextual Info: Keypads AVME Keypads Index Series AVME Product Range - Keypad 706 01.2002 Page 707 Technical Data Page 708 Drawing / Dimension / Layouts Page 709 AVME Keypads keypad 16 hexadecimal material of contacts stainless steel/ Au matrix stainless steel/ Au common point

Contextual Info: VMEbus Boards AVME9440-i Isolated Digital I/O 16 inputs and 16 outputs These boards provide an economical method for isolating and interfacing digital I/O signals to the VMEbus. Built-in optical relays eliminate the expense of external relay panels and simplify installations. The

Contextual Info: Electrical Datasheet GA040TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 40 A = 1.8 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

AVM301A

Contextual Info: AVM301A - Automatic Winding Machine for Miniature Capacitors MAIN FEATURES Winding of 2 capacitors/cycle, on heated mandrel, with burn-off on both metallized films, heat sealing on request with capacitance control . System to avoid film slipping with micrometric stagger adjustment and electronic control of film

SPLIT MOTOR

Abstract: ADS606A-R03-070108 AVM606A motor winding data
Contextual Info: AVM606A Automatic Winding Machine for Metallized Film Capacitors MAIN FEATURES • 2 capacitors each cycle. • Two winding stations independently motor driven. • Split mandrels • A constant staggering is assured by using air guides. • Double burn-off system.

Contextual Info: CASES:_ F - 2 2 _ T O -1 2 6 \ | ^ avm ; 1 ' i i : A ! TYPE 1 .6 T1F T1F T1F T1F T1F T1F A rms A rm s i - I DM ' VGT 3 1JM‘ 'JM' max. _(A) ; ( wa> ; (V) i 2t= 0 .5 A 2s 50 100 200 400 600 800 T^=.100°C 10 : 1 # * 4. 7

AVM3105P9

Abstract: AVM3125P9 AVM3205P9 AVM3215P9 AVM3225P9 AVM3235P9 AVM3245P9 AVM3255P9 AVM3405P9 SPARK quench
Contextual Info: AVM3ⅪⅪⅪP HIGH CAPACITY, LONG LIFE SUBMINIATURE SWITCH FEATURES Compliance with RoHS Directive • 10.1 Amp. high contact capacity is available • Long life • Precise operating position ±0.25mm: Pin plunger type • Flux-resistant construction with

Contextual Info: Electrical Datasheet GA060TH65-CAU Silicon Carbide Thyristor VFBM = 6500 V IT AVM Qrr = 60 A = 2.95 µC Features • 6500 V Asymmetric SiC NPNP Thyristor • 250 °C operating temperature • Fast turn on characteristics • Lowest in class Qrr/IT(AVM) Applications

logik 25-s

Abstract: 9416L M/gi 9404
Contextual Info: Multiturn-Absolutwertdrehgeber AVM 58 SYNCHRON SERIELLES INTERFACE 25-Bit-Multiturn Galvanisch entkoppelte RS 422-Schnittstelle Bis 1,5 MBaud Servo- oder Klemmflansch Der Multiturn-Absolutwertdrehgeber AVM 58 gibt über die SSI-Schnittstelle Synchron-Serielles-Interface einen der Wellenstellung entsprechenden Positionswert

Contextual Info: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 – 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB