AVALANCHE DIODE CROSS REFERENCE Search Results

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

MOSFETs

Abstract: N mosfet 100v 500A uis test AO4468 for bipolar junction diode used for MOSFET cross AOT1N60 high voltage mosfet
Contextual Info: dV/dt Ratings for Low Voltage and High Voltage Power MOSFET Fei Wang , Wei Wang, Anup Bhalla 1. Abstract To better understand and utilize AOS power MOSFETs, it is important to understand the design and ratings. Voltage ramp and diode recovery related dV/dt and avalanche breakdown UIS are explained and the inter-relationship

POWER MOSFET CIRCUIT

Abstract: fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484
Contextual Info: Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures .3 Introduction .4

T2 WICKMANN FUSE

Abstract: t1.403 National Standard for Telecommunications ARRESTOR triac 131-6 raychem stress control tube schematic design for surge protector and electric Federal fuse switch transmission line transformers TVS-SM05 AN34
Contextual Info: AN34 Application Note Secondary Line Protection for T1 and E1 Line Cards Roger Taylor The lower cost of high speed digital T1 and E1 trunk lines has resulted in the increasing deployment of this technology in place of traditional analog lines. In the past, T1/E1 trunks were used

Contextual Info: FQB12N60 / FQI12N60 April 2000 QFET TM FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

RC snubber for 3 phase rectifier bridge

Abstract: "water Flow Sensor" water flow sensor metal rectifier diode metric bolts torque m 32 HSK-E 6000 skv 1/2b 3000/2700 electrolube chopper transformer FOR UPS heat sensor with fan cooling working
Contextual Info: 8. Rectifier Diodes Features Typical Applications Small plastic packaged diodes • Reverse voltages up to 1700 V • All-purpose rectifier diodes • Axial lead diodes taped for automatic insertion • Snubber diodes Threaded stud diodes • Reverse voltages up to 3000 V

power switching with IRFP450 schematic

Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2

Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –

Contextual Info: FQB2P25 / FQI2P25 April 2000 QFET TM FQB2P25 / FQI2P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

ztx650 equivalent

Abstract: ZTX300 ZTX650 negative temperature coefficient devices DN-41
Contextual Info: Design Note 4 Issue 2 June 1995 Temperature Effects On Silicon Semiconductor Devices Many applications require reliable circ uit operation over a wide temperature range. Automotive environments for example may experience a range of -40°C to +125°C, while a more usual industrial range may

FQB11P06TM

Contextual Info: QFET TM FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFR430B / IRFU430B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB12P10 / FQI12P10 August 2000 QFET TM FQB12P10 / FQI12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

SSW4N60B

Contextual Info: SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB24N08 / FQI24N08 August 2000 QFET TM FQB24N08 / FQI24N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB11N40 / FQI11N40 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQB19N10TM

Contextual Info: FQB19N10 / FQI19N10 August 2000 QFET TM FQB19N10 / FQI19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SSR2N60A

Contextual Info: SSR2N60B / SSU2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET TM FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: QFET TM FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to