AVALANCHE DIOD Search Results

OM55N10NK

Abstract: OM60N10NK OM75N05NK OM75N06NK
Contextual Info: Avalanche Characteristics Avalanche Current IAR EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy IAR Avalanche Current 3.1 - 44 Electrical Characteristics - OFF V BR DSS Drain-Source Breakdown Voltage Zero Gate Voltage IDSS Drain Current (VGS = 0)

K1 transistor

Contextual Info: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.

05P4417

Abstract: 05P5047
Contextual Info: 5SDA 05P50 5SDA 05P50 Old part no. DA 805-520-50 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

5SDA09P2313

Contextual Info: 5SDA 09P23 5SDA 09P23 Old part no. DA 805-850-23 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

08P26

Contextual Info: 5SDA 08P26 5SDA 08P26 Old part no. DA 805-770-26 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

5SDA06P3816

Abstract: 5SDA
Contextual Info: 5SDA 06P38 5SDA 06P38 Old part no. DA 805-600-38 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

07P3215

Abstract: 5sda07p2935 5SDA07P3235 07P32
Contextual Info: 5SDA 07P32 5SDA 07P32 Old part no. DA 805-690-32 Avalanche Diode Properties § Low forward voltage drop § Avalanche reverse characteristics § Guaranteed maximum avalanche power dissipation § Version with or without lead § Both polarity options § High operational reliability

Contextual Info: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound

S06200

Contextual Info: TS04700 thru T S 10000 emiCorp. SANTA ANA, CA For more information call: 714 979-8220 FE A T U R E S LOW VOLTAGE AVALANCHE D IO D E S • Low voltage avalanche zener diodes. • Considerably sharper breakdown than standard 4-10 volt zeners. • Suppressed field emission breakdown mechanism produces avalanche

BY527

Contextual Info: BY527 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications

S330D

Contextual Info: S330D VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • Controlled avalanche characteristics Glass passivated junction Low reverse current Hermetically sealed package Applications High voltage Power supplies 949539

S330D

Contextual Info: S330D VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Controlled avalanche characteristics Glass passivated junction Low reverse current Hermetically sealed package Applications High voltage Power supplies 949539

smd code marking A8 diode

Abstract: smd diode code a8 DIODE smd marking v1 L21 SMD BAS31 l21 smd code DIODE SMD A8 smd diode A8 BAS29 BAS35
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31; BAS35

Contextual Info: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current

BAX12

Abstract: DO35 MAM246 Controlled avalanche diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12

DIODE 1N5625 V

Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

1N5625

Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

BAX12A

Abstract: BAX12 equivalent G1.L BAX12 DO35 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12; BAX12A Controlled avalanche diodes Product specification Supersedes data of 1996 Sep 17 2002 Apr 08 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A FEATURES DESCRIPTION

BYW52 200

Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

450APH

Abstract: 456aph PLVA400A PLVA450A PLVA453A PLVA456A PLVA459A PLVA462A PLVA465A PLVA468A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 PLVA400A series Low-voltage avalanche regulator diodes Product specification Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product specification Low-voltage avalanche regulator diodes PLVA400A series

SOD-57

Abstract: BYW55 BYW52 200
Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading

BYW83

Abstract: BYW86 BYW82 BYW84 BYW85
Contextual Info: BYW82 to BYW86 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications

byw83

Abstract: BYW86
Contextual Info: BYW82, BYW83, BYW84, BYW85, BYW86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading

BYW55

Abstract: byw55 byw56 BYW52 200
Contextual Info: BYW52, BYW53, BYW54, BYW55, BYW56 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading