AVAI Search Results

Contextual Info: TOSHIBA TC4030BP/BF/BFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tran^riRP Tran^fiRF Trzin^nRFM • ^ w » . g ■ ^ w » . f ■ 'w ■■ - - Note The JEDEC SOP (FN) is not available in TC4030B QUAD EXCLUSIVE - OR GATE Japan. TC4030B contains four circuits of exclusive OR gates. Since

Contextual Info: TLE2037, TLE2037A EXCALIBUR LOW -NOISE HIGH-SPEED PRECISION DECOM PENSATED OPERATIONAL AM PLIFIERS D3454, MAY 1990 - REVISED APRIL 1991 available features Outstanding Combination of DC Precision and AC Performance: Gain-Bandwldth Product. . . 80 MHz Typ V

7408, 7404, 7486, 7432

Abstract: RF400U functional diagram of 7400 and cd 4011 ls 7404 180 nm CMOS standard cell library TEXAS INSTRUMENTS 74191 4BITS s273 buffer 74374 7408 CMOS cmos 7404
Contextual Info: TGC100 Series CMOS Gate Arrays RELEASE 3.0, REVISED JANUARY 1990 • Twelve Arrays with up to 26K Available Gates • Fast Prototype Turnaround Time • Extensive Design Support - Design Libraries Compatible with Daisy, Valid, and Mentor CAE Systems - Tl Regional ASIC Design Centers

Contextual Info: TOSHIBA TC4040BP/BF/BFN TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT T r A flA flR P • m g ■ ^mf TTZLiMflRF m bmt ■ TC4040B 12 STAGE RIPPLE-C A R R Y BINARY COUNTER/DIVIDERS SILICON M ONOLITHIC g TrZLilZLORFM m ■ ^mf ■ m f ■ ■ v Note The JEDEC SOP (FM) is not available in

Contextual Info: TLE2024, TLE2024A, TLE2024B, TLE2024Y EXCALIBUR HIGH-SPEED LOW-POWER PRECISION QUAD OPERATIONAL AMPLIFIERS D 3 2 6 5 , M A Y 1 9 8 9 - R E V IS E D O C T O B E R 1991 available features Supply Current . . . 1 mA Max High Open-Loop Gain . . . 7 V/jiV 137 dB Typ

FN521

Abstract: FN 521 UFN522 UFN523 UFN520
Contextual Info: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.

1n758

Contextual Info: TYPES 1N746 THRU 1N759, 1N746A THRU 1N759A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN NO . D L -S 7311942, M A R C H 1973 V z . . . 3.3 V to 12 V, P d • • •400 mW • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction description and mechanical data

Contextual Info: UT54 ACS 153/UT54ACTS153 Radiation-Hardened Quadruple 4 to 1 Multiplexers PINOUTS FEATURES • 16-Pin D IP Top View 1.2n radiation-hardened CMOS - Latchup immune High speed Low power consumption Single 5 volt supply Available QM L Q o r V processes Flexible package

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

TLE2062B

Contextual Info: TLE2062, TLE2062A, TLE2062B, TLE2062Y EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE jiPOW ER DUAL OPERATIONAL AM PLIFIERS D3346, OCTOBER 1989 - REVISED NOVEMBER 1991 availablefeatures • Excellent Output Drive Capability V 0 = ± 2.5 V Min at R|_ = 100 Q , VC C ± = ± 5 V

74LS27 truth table

Contextual Info: TOSHIBA TC74HC27AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC27AP, TC74HC27AF, TC74HC27AFN Note The JEDEC SOP (FN) is not available in Japan. TRIPLE 3 -IN P U T NOR GATE The TC74HC27A is a high speed CMOS 3-INPUT NOR GATE fabricated with silicon gate C2MOS technology.

Contextual Info: TOSHIBA TC4028BP/BF/BFN TO SH IBA CM OS DIG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC4028BP, TC4028BF, TC4028BFN Note The JEDEC SOP (FN) is not available in Japan TC4028B B C D -T O -D E C IM A L DECODER TC4028B is a BCD-to-DECIMAL decoder which converts BCD

JFET 4405

Abstract: tle20641
Contextual Info: TLE2064M, TLE2064AM EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE UPOWER QUAD OPERATIONAL AMPLIFIERS D3367, N O V EM B ER 1989 - R E V IS E D O C T O B E R 1991 available features Excellent Output Drive Capability V 0 = ± 2.5 V Min at R L = 100 £2, VCC± = ± 5 V

A1N4752

Abstract: 1N4728 1N4732
Contextual Info: TYPES 1N4728 THRU 1N4752, 1N4728A THRU 1N4752A SILICON VOLTAGE-REGULATOR DIODES B U L L E T IN f N O . D L -S 7 3 1 1 9 4 9 , M A R C H 1 9 7 3 V z . . . 3.3 V to 33 V PD • • • 1 W • Available in 5% and 10% Tolerances • Rugged Double-Plug Construction

ufn440

Abstract: UFN441
Contextual Info: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.

UFN432

Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
Contextual Info: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.

TLR4202

Abstract: TLC2207 TL6220 TLR2207 TLC2177 TL62207/TLR2207
Contextual Info: T TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A 99D < D IS C R E T E /O P T O 17259 D T -4 1 -S3 TLG2 I77, TLG4 I72, TLG2207, TLG4202 GREEN COLOR 4 D IG IT S L E D D IS P L A Y * For uje of Static drive connections and available both polarity coonon anode or

UFN450

Abstract: UFN451
Contextual Info: POWER MOSFET TRANSISTORS Hfflg? 500 Volt, 0.4 Ohm N-Channel UFN452 UFN453 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficie n t design a ch ieves a very low Rosiom and a high tran scon d u ctan ce.

LM2577 sepic

Abstract: sepic converter 12v 30A
Contextual Info: [application • I INFO U N IT R O D E I UC2577-12/15 B T available Simple Step-Up Fixed Voltage Regulators FEATURES DESCRIPTION • Requires Few External Components • NPN Output Switches 3.0A, 65V max • Extended Input Vottage Range: 3.0V to 40V • Current Mode Operation for Improved

2N6797

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV 200 Volt, 0.4 Ohm N-Channel DESCRIPTION The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design ach ieves a very low Rosiom and a high transconductance. FEATURES • Fast Sw itching

Contextual Info: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap

Sink15

Contextual Info: y applicationlB K INFO1 UNITRODE Il available ] UC1849 UC2849 UC3849 Secondary Side Average Current Mode Controller FEATURES DESCRIPTION • Practical Secondary Side Control of Isolated Power Supplies The UC1849 family of average current mode controllers accurately accom­

74HC125A

Abstract: TC74HC125AFN
Contextual Info: TOSHIBA TC 74H C 125A P /A F/A FN ,126A P /A F TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC125AP, TC74HC125AF, TC74HC125AFN TC74HC126AP, TC74HC126AF TC74HC125AP/AF/AFN TC74HC126AP/AF QUAD BUS BUFFER QUAD BUS BUFFER Note The JEDEC SOP (FN) is not available in

D3440

Contextual Info: TLE2027M, TLE2027AM EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIERS D3440, MAY 1990, REVISED OCTOBER 1991 available features Outstanding Combination of DC Precision and AC Performance: Unity-Galn Bandwidth . . . 15 MHz Typ V n_3.3 nV/VHz at f = 10 Hz Typ,