AUSN SOLDER Search Results

Contextual Info: Bergquist Thermal Clad Technical Data MP-06503 MULTI-PURPOSE DIELECTRIC Benefits • Thermal resistance 0.09°Cin2/W (0.58°Ccm2/W) • Thermal conductivity of 1.3 W/m-K • Multi-Purpose applications • Lead-free solder compatible • Eutectic AuSn compatible

Hokuriku crystal

Contextual Info: SMD Crystal Clock Oscillators Ultra-small SMD Type Crystal Clock Oscillators : KCO-500 Series Features Ultra-small package 5.0 mmx3.2 mm , 1.2 mm thick Power supply voltage 3.3V type High reliability is achieved by metal cap and AuSn vacuum sealing Most suitable for automatic mounting, reflow soldering

Hokuriku crystal

Contextual Info: SMD Crystal Clock Oscillators Ultra-small SMD Type Crystal Clock Oscillators : KCO-500 Series 䂓Features 䊶Ultra-small package 5.0 mm㬍3.2 mm , 1.2 mm thick 䊶Power supply voltage 3.3V type 䊶High reliability is achieved by metal cap and AuSn vacuum sealing

AuSn eutectic

Abstract: AN3017 k-242 305O self-aligned AuSn solder
Contextual Info: Procedure for Multifunction Self-Aligned Gate MSAG AuSn Eutectic Solderability 1. AN3017 Rev — Introduction The following procedure is M/A-COM’s recommended instruction for eutecticly attaching die to pedestals 2. Materials/Supplies 2.1 The following are materials and supplies required to perform eutectic soldering.

tanaka TS3332LD epoxy

Abstract: tanaka TS3332LD TS3332LD tanaka epoxy remix capacitors Die Attach epoxy stamping tanaka free circuit diagram of rf id Broadband Amplifiers Application Notes, appendix 3 Thermal Epoxy
Contextual Info: Epoxy Die Attach Considerations for HPA MMICs 1 Scope MMICs have been traditionally mounted on a RF circuit board, or directly to a plated metal carrier, using a wide range of conductive epoxies, or eutectic solder (e.g. AuGe, AuSn). Eutectic and epoxy has been used in both

Contextual Info: SMD Crystal Clock Oscillators Ultra-small SMD Type Crystal Clock Oscillators : KCO-500 Series Features Ultra-small package 5.0 mmx3.2 mm , 1.2 mm thick Power supply voltage 3.3V type High reliability is achieved by metal cap and AuSn vacuum sealing Most suitable for automatic mounting, reflow soldering

laser diode submount

Abstract: AuSn solder submount CuW laser diode bar ausn submount AuSn
Contextual Info: Preliminary Data sheet 60W 806nm High Power Laser Diode Bar on Submount Features BS60C-806-01 • Telecom grade AuSn mounting technology The Bookham Technology BS60C-806-01 laser diode bar on submount series has been designed to provide the high output power and high reliability required for

AuSn solder

Contextual Info: V i s h ay I n t e rt e c h n olog y, I n c . I INNOVAT AND TEC O L OGY AuSn Series N HN LASER DIODE SUBSTRATE MOUNTS O 19 62-2012 Resistors - Deposited Gold Tin Thin Film Patterned Substrates with Deposited Gold/Tin Pads Key Benefits • • • • • •

Contextual Info: V ishay I ntertechnolog y, I nc . AND TEC I INNOVAT O L OGY Using Thin Film Substrates N HN DIODE SUBMOUNT CAPABILITIES O 19 62-2012 Resistors - Vishay Electro-Films LED Submounts INTRODUCTION Vishay Electro-Films, with its complete in-house capability, offers a wide variety of solutions for

Contextual Info: Heat Sin nks, Stand doffs s & Sh hims s •   DLI offe ers numero ous dielecttric options s to suit diifferent the ermal and electrical requirem ments! Each de evice is cu ustom tailored to the customer’’s specifica ations. Please use u the ch hecklist on the final page

Contextual Info: C02E10.pdf 03.9.2 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF

MIL-STD-883 method 2019

Contextual Info: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF

405nm LED

Abstract: C470-XB900-A C470-XB900-B xbt-m silicon carbide LED cree bonding wire cree Au Sn eutectic C405-XB900-A C405-XB900-B CXXX-XB900-X
Contextual Info: G•SiC Technology XBright Power Chip LED CXXX-XB900-X ® The Leader in Silicon Carbide Solid State Technology Features Applications • XBright™ Technology • General Lighting • Larger “Power Chip” Design • White LEDs • High Performance

AuSn solder

Contextual Info: TGA2501-TS 6 - 18 GHz 2.8 Watt Power Amplifier Key Features and Performance • • • • • • • Preliminary Measured Performance Bias Conditions: VD = 8 V ID = 1.2 A 34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss

70T50

Contextual Info: M04E.pdf 05.9.6 !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.

flux-eutectic

Abstract: UP78 silicon carbide LED Alpha Metals
Contextual Info: XBright & XThin® Au/Sn Die Attachment Recommendations XBright and XThin LEDs are the latest generation of solid-state light emitting diodes available from Cree. XBright and XThin chips use a geometrically shaped Epi-down chip design combined with InGaN epitaxy and Cree’s proprietary

PD10g

Contextual Info: PIN Photodiode 10Gbit/s Product Number: PD10GPM03201707 Features ƒ High Responsitivity ƒ High Sensitivity ƒ Flip-Chip Mountable ƒ Bondable ƒ Surface Sensitive General Description The PDPIN10G is a PIN diode on InP to be exposed from the surface AR-coating . It is suitable for 10Gbit/s

Contextual Info: PIN Photodiode 4Gbit/s Product Number: PD4G0PM06001707 Features ƒ High Responsitivity ƒ High Sensitivity ƒ Flip-Chip Mountable ƒ Bondable ƒ Surface Sensitive General Description This product is a PIN diode on InP to be exposed from the surface AR-coating . It is suitable for up to 4Gbit/s

Contextual Info: Thin Film North America Review of Select Products - 2009 THIN FILM NA RESISTORS PRECISION DIVIDERS AND NETWORKS MATCHED PAIRS MP, MPM, MPD SC70, SOT23, SOT143 SERIES MATCHED NETWORKS ORN, NOMC, OSOP (SOIC 8, 14, 16, 20) SERIES CSO CUSTOMS MARKET TRENDS ¾ TRANSITIONING AWAY FROM CUSTOMS TO STANDARD OFF-THE-SHELF VALUES

AuSn solder

Abstract: fsx51x die-attach FSX51 AuSn
Contextual Info: GaAs FET FHX35X/002 FSX51X/011 BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and per­ sonnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment.

Contextual Info: TGA2502 13 - 15 GHz 4W Power Amplifier Key Features • • • • • • 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm

C395-XB290-E400-B

Abstract: UV led 220 nm peak silicon carbide LED cree uv LED hysol OS4000 epoxy C395-XB290-E400-A C405-XB290-E400-A C405-XB290-E400-B C460-XB290-E1000-A C460-XB290-E1000-B
Contextual Info: G•SiC Technology XBright LEDs CXXX-XB290-EXXXX-X ® The Leader in Silicon Carbide Solid State Technology Features Applications • XBright™ • Outdoor LED Video Displays • High Performance – 16.0 mW 395nm Ultraviolet – 17.0 mW (405nm) Ultraviolet

RUCYT101K00009GNTC

Abstract: tray 10x10mm RUCYT201K00014GNTC
Contextual Info: Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.

TGA2502

Abstract: 9948465 21A 8 BALL
Contextual Info: TGA2502 13 - 15 GHz 4W Power Amplifier Key Features • • • • • • 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm