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DSP96002 APPLICATIONS

Abstract: JG-27 ABB B18 DSP96002 JG11 PAL Decoder 16L8 BA-06 74FACT00 ICT-286-S-TG Nippon capacitors
Contextual Info: DSP96002ADM User’s Manual Motorola, Incorporated Semiconductor Products Sector Wireless Division 6501 William Cannon Drive West Austin, TX 78735-8598 Order this document by: DSP96002ADMUM/AD Introduction This document supports the DSP96002 Application Development Module

Contextual Info: Te m ic TSCA 6000 TELEFUNKEN Semiconductors GaAlAs Infrared Emitting Diode with Collimating Lens Description T S C A 6000 is a high intensity infrared emitting diode in G aA lA s on G aA lA s technology, m olded in a clear, untinted 0 5 mm plastic package.

Contextual Info: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.

transistor D468 circuit diagram application

Abstract: 4 pin battery charger laptop 12v transistor d468 a1012 transistor transistor A1012 78L05 voltage regulator pin configuration d468 3904 dual ATS diagram TL 78l05
Contextual Info: SS6782G Charge Controller for Dual Batteries FEATURES DESCRIPTION Quick and easy testing for production. Sequential charging control of two NiMH/NiCd Battery Packs. Reliable sequential fast charge control of dual NiMH and/or NiCd Battery Packs, even with a fluctuating charging current.

Contextual Info: Electrical Characteristics intei, 14 Electrical Characteristics 14.1 Absolute Maximum Ratings Case Temperature under B ! to +100^C Storage Temperature.

Contextual Info: PRELIMINARY CY7C1009 128K x 8 Static R AM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 ^iW • AvaUable in 450 x 550-mil LCC

BFP540

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking ats

Abstract: BFP540F
Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

BFP540

Abstract: 030232
Contextual Info: BFP540 NPN Silicon Germanium RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP540F

Contextual Info: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s 

Contextual Info: BFP540 NPN Silicon Germanium RF Transistor 3 4
For highest gain low noise amplifier at 1.8 GHz
Outstanding Gms = 21 dB 2 Noise Figure F = 0.9 dB
Gold metallization for high reliability 1
SIEGET
45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

AS7C1028-25PC

Abstract: AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028
Contextual Info: High Performance 256Kx4 CMOS SRAM AS7C1028 AS7C1028L 256K×4 CMOS SRAM Features • Organization: 262,144 words × 4 bits • High speed - 12/15/20/25/35 ns address access time - 4/4/5/6/8 ns output enable access time • Low power consumption - Active: 660 mW max 15 ns cycle

28-pin SOJ SRAM

Abstract: 32K8 AS7C3256-12JC AS7C3256L ci 741 AS7C3256-20JC AS7C3256 AS7C3256-10JC AS7C3256-10PC
Contextual Info: High Performance 32Kx8 3.3V CMOS SRAM AS7C3256 AS7C3256L Low voltage 32K×8 CMOS SRAM Features • Organization: 32,768 words × 8 bits • Single 3.3 ± 0.3V power supply • 5V tolerant I/O specification • High speed - 10/12/15/20 ns address access time

AS7C256-20JC

Abstract: AS7C256 taa 723 7C256-10 7C256-12 7C256-15 AS7C256L AS7C256-15PC 7C1024
Contextual Info: High Performance 32Kx8 CMOS SRAM AS7C256 AS7C256L 32K×8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE and OE inputs – 10/12/15/20/25/35 ns address access time

Contextual Info: UAL Series Aluminum Housed Wirewound Resistors • • • • • • • • Power Rating 5 to 300Watts High Temperature: -55°C to +275°C Excellent Pulse Handling Resistances from 0.005 to 250kOhms Tolerance to ±0.01% Low TCR: ± 20ppm/K Standard Four Terminal Versions Available

RER70

Abstract: MIL-R-39009 UAL-10 UAL-25 UAL-25-4TR UAL-50 ual-10 300 ohm 1
Contextual Info: UAL Series Aluminum Housed Wirewound Resistors • • • • • • • • UAL-25-4T UAL-25-4 Power Rating 5 to 300Watts High Temperature: -55°C to +275°C Excellent Pulse Handling Resistances from 0.005 to 250kOhms Tolerance to ±0.01% Low TCR: ± 20ppm/K Standard

RE70

Abstract: 091 ual-50 MIL-R-39009 UAL-10 UAL-25 UAL-25-4TR UAL-50 RER-80 RER75 UALN-25
Contextual Info: UAL Series Aluminum Housed Wirewound Resistors • • • • • • • Power Rating 5 to 300Watts All Welded Construction Resistances from 0.005 to 250kOhms Tolerance to ±0.01% High Overload and Pulse Handling Low TCR: ± 20ppm/K Standard Four Terminal Versions Available

Contextual Info: UAL Series Aluminum Housed Wirewound Resistors • • • • • • • • UAL-25-4T UAL-25-4 Power Rating 5 to 300Watts High Temperature: -55°C to +275°C Excellent Pulse Handling Resistances from 0.005 to 250kOhms Tolerance to ±0.01% Low TCR: ± 20ppm/K Standard

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

XL28C16A

Contextual Info: /p 7 m i c r o e l e c t r o n i c s , in c . p £ b ixctltnct ui E* | XL28C16A 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Fast Read Access Tim es — 100ns, 150ns, 200ns, 250ns Low CMOS Power Consumption — 30mA active max. — 100^1A standby (max.)

Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

TRANSISTOR MARKING YB

Abstract: BFP420F BFP540F s parameters 4ghz
Contextual Info: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line to p v ie w " ! A T s  d ir e c tio n o f u n r e e lin g

ic marking Yb

Abstract: INFINEON ATS TRANSISTOR MARKING YB BFP420F BFP540F E6327 keic
Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB 2 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!