ATI 12A - 11 Search Results

K3615

Abstract: 2SK3615 sanyo mosfet ENN8332 2SK36
Contextual Info: 2SK3615 Ordering number : ENN8332 2SK3615 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

k411

Abstract: 2SK4116LS A0790
Contextual Info: 2SK4116LS Ordering number : ENA0790 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4116LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

K4121

Abstract: 2SK4121LS
Contextual Info: 2SK4121LS Ordering number : ENA0824 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4121LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

op 847

Abstract: 157-23c200 LR54109
Contextual Info: GENERAL PURPOSE RELAY TYPE 157 ✑ ✒✔✓✞✕✗✖ ✘ ✙ FEATURES: • The Type 157 relay isaruggedpower driver of f eringsuperior 3/ 16”through air and3/ 8”over-surf ace spacing. • Aninterlockedf rame andcontact blockprevent contact misalignment duringplug-in.

PM6501

Abstract: PM6502 650w PM650 ve45 EN60601-1-2
Contextual Info: RSG RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ELECTRONIC COMPONENTS ■ ■ ■ ■ Änderungen vorbehalten / subject to change without notice

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4055452 GD1MS22 ATI ■ INR H Ü _ IRC530 W Q. CO Q. E E < c0 < ca> D O C ‘cvö _ Q O ç ’S a _ a 10° 10 1 V qs, Drain-to-Source Voltage volts) DATA SHEETS Q 101 V qs, Drain-to-Source Voltage (volts)

13001 TRANSISTOR

Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
Contextual Info: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

EMH2601

Abstract: EN8731 it10408
Contextual Info: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

2SB886

Abstract: 2SD1196 ITR08
Contextual Info: Ordering number:ENN928C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB886/2SD1196 Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2010C [2SB886/2SD1196]

Contextual Info: VEC2616 Ordering number : ENA1822 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs VEC2616 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive

CPH6302

Contextual Info: Ordering number:EN5939 P-Channel MOS Silicon FET CPH6302 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2151 [CPH6302] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.6 1.6 0 to 0.1

Contextual Info: Ordering number : ENN7010 MCH3406 MCH3406 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • • Low ON-state resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3406] 0.3 0.25 • Package Dimensions 0.15 0.25 2

CPH5611

Abstract: TA72
Contextual Info: Ordering number : ENN7154 CPH5611 N-Channel Silicon MOSFET CPH5611 Ultrahigh-Speed Switching Applications • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.

ECH8202

Abstract: A1556
Contextual Info: ECH8202 Ordering number : ENA1556 SANYO Semiconductors DATA SHEET ECH8202 NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • High-power IGBT/MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers. Features

diode sy 710

Abstract: VEC2814
Contextual Info: VEC2814 Ordering number : ENA0390B SANYO Semiconductors DATA SHEET VEC2814 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package

ATI Lead Free reflow soldering profile BGA

Abstract: ATI RADEON reflow profile 216MQA6AVA12FG 216TQA6AVA12FG amd chipset 216mqa6ava12fg 216lqa6ava12fg amd RADEON igp AMD Turion 64 X2 RADEOn x700 RS690
Contextual Info: AMD RS690 Databook Technical Reference Manual Rev. 3.04 P/N: 41977_rs690_ds 2007 Advanced Micro Devices, Inc Please note that in this databook, references to "DVI" and "HDMI" may refer to: 1 the function of the integrated DVI/HDMI interface described in details in section 2.2.1 and

amd RADEON igp

Abstract: IGP reflow profile ATI RADEON reflow profile 216TQA6AVA12FG ATI Lead Free reflow soldering profile BGA RADEON IGP 216 radeon igp 1012 xilleon 240 xilleon 242 AMD M690T Chipset
Contextual Info: AMD M690T Databook Technical Reference Manual Rev. 3.04 P/N: 42437_m690t_ds_nda_3.04 2007 Advanced Micro Devices, Inc Please note that in this databook, references to "DVI" and "HDMI" refer to the capability of the TMDS interface, multiplexed on the PCI Express external graphics interface,

IRFB40

Contextual Info: Data Sheet No. P06.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Herm etic ■Floatingchanneldesignedforbootstrap Product Summary operation ■ ■ ■ ■ ■ VOFFSET 400V max. lo+/- 200 mA / 420 mA VOUT 1 0 -20V ton/off typ. 675 & 425 ns

Contextual Info: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

B55QS03

Abstract: it8282m ATI SB460 AMD Athlon 64 X2 pin diagram STP80 b55qs SB460/600
Contextual Info: 5 D C B 1 Cover Page 2 Block Diagram 3 Clock Generator 4 Power CPU Vcore , Intersil 6566(DCR Sense) 5 Power A(DC to DC) 6 Power B(DC to DC),PWR sequence&good 7 K8 - M2 CPU (HT) D 8 K8 - M2 CPU (MEM) A 9 K8 - M2 CPU (CTRL) B,C 10 K8 - M2 CPU (POWER,GND) E,F,G,H

Contextual Info: t o s h . b a integrated circuit T E C H N IC A L D A TA Q] GENERAL DESCRIPTION The TC8802AF is a single chip PARCOR system voice synthesizing LSI with a 64k bits mask ROM and a low-pass filter circuit. ° FEATURES 1 PARCOR system 10kHz sampling voice output.

Contextual Info: A m 29050 RISC Microprocessor with On-Chip Floating-Point Unit DISTINCTIVE CHARACTERISTICS • Full 32-bit, three-bus architecture ■ 55 million instructions per second MIPS sustained at 40 MHz a Advanced Micro Devices ■ 64-entry Memory Management Unit (MMU)

pic 16 f 888

Abstract: 7818a AD7888 se 7888 HASS 100-S
Contextual Info: 2.7Vto 5.25 V, Micro Power, 8-Channel, 125kSPS, 12-Bit ADC in 16-PinTSSOP Preliminary Technical Data AD7888 ANALOG DEVICES FUNCTIONAL BLOCK DIAGRAM FEATURES Specified for V DD of 2.7 V to 5.25 V Flexible Pow er/Throughput Rate Managem ent Shut Down Mode: 1pA max

SM7060

Abstract: 140MHz IF demodulator IC SD7060 SD706 AN993 ISL83700EVAL ISL83740EVAL ISL87060 ISL87060DIK DIN616
Contextual Info: Intersil's ISL83700EVAL and ISL83740EVAL Evaluation Kits provide a means to efficiently evaluate the performance of the ISL837030/ISL83740 Modem Reference Designs and ISL87060 Modem Chip Set. This kit includes everything needed to exercise and monitor the performance of the modem in a laboratory environment.