ATI 12A - 11 Search Results

ati connector 42 PIN

Abstract: PFC400
Contextual Info: RSG RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ELECTRONIC COMPONENTS ■ ■ ■ ■ Änderungen vorbehalten / subject to change without notice

K3615

Abstract: 2SK3615 sanyo mosfet ENN8332 2SK36
Contextual Info: 2SK3615 Ordering number : ENN8332 2SK3615 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

2SK896

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn HIGH SPEED, HIGH C URRENT SWITCHING APPLICATIONS. 2SK896 INDUSTRIAL APPL I C A T I O N S CH OPP ER RE GULATOR, DC-DC C O NVE RTE R AND M OT OR D RIVE APPLICATIONS. • L o w D r a i n -Source O N R e s istance : r DS (ON)

k411

Abstract: 2SK4116LS A0790
Contextual Info: 2SK4116LS Ordering number : ENA0790 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4116LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

K4121

Abstract: 2SK4121LS
Contextual Info: 2SK4121LS Ordering number : ENA0824 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4121LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.

2SK21

Abstract: 003A 2SK2148-01R
Contextual Info: S P E CI FI C ATI ON DEVICE NAME Powe r MOS F ET TYPE NAME 2S K 2 14 8- 0 1R SPEC. No. Fu j i E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Co^Ltd CHECKED il Y 025T -R -004a ± 1 . Scope

Contextual Info: 2SK4064LS Ordering number : ENA0312 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4064LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

BTA12 600V

Abstract: scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STD25NF20 600v 5A scr diac triac bta08 triac 800V 1A
Contextual Info: LIGHTING Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions STBV68 STBV45 STBV42 STBV32 STX13003 ST13003 BULT118 BULK128D-B BULD1101ET4 STD13003-1 BULD118D-1 BULB39DT4 BULB49DT4 STB13005-1 BUL118 BUL128 BUL128D-B

op 847

Abstract: 157-23c200 LR54109
Contextual Info: GENERAL PURPOSE RELAY TYPE 157 ✑ ✒✔✓✞✕✗✖ ✘ ✙ FEATURES: • The Type 157 relay isaruggedpower driver of f eringsuperior 3/ 16”through air and3/ 8”over-surf ace spacing. • Aninterlockedf rame andcontact blockprevent contact misalignment duringplug-in.

PM6501

Abstract: PM6502 650w PM650 ve45 EN60601-1-2
Contextual Info: RSG RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ELECTRONIC COMPONENTS ■ ■ ■ ■ Änderungen vorbehalten / subject to change without notice

2SK4064LS

Abstract: 2sk4064
Contextual Info: 2SK4064LS Ordering number : ENA0312A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4064LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4055452 GD1MS22 ATI ■ INR H Ü _ IRC530 W Q. CO Q. E E < c0 < ca> D O C ‘cvö _ Q O ç ’S a _ a 10° 10 1 V qs, Drain-to-Source Voltage volts) DATA SHEETS Q 101 V qs, Drain-to-Source Voltage (volts)

2SC6022

Contextual Info: 2SC6022 Ordering number : ENN8355 2SC6022 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • • • • • • Adoption of FBET and MBIT processes. Large current capacitance.

13001 TRANSISTOR

Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
Contextual Info: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).

VEC2302

Abstract: INVERTER BOARD SANYO TB INVERTER BOARD SANYO
Contextual Info: VEC2302 Ordering number : ENN8026 P-Channel Silicon MOSFET VEC2302 General-Purpose Switching Device Applications Features • • • • • The best suited for inverter applications. Low ON-resistance. Composite type facilitating high-density mounting. 4V drive.

EMH2601

Abstract: EN8731 it10408
Contextual Info: EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

2SC6084

Contextual Info: 2SC6084 Ordering number : ENA0630 SANYO Semiconductors DATA SHEET 2SC6084 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

Contextual Info: VEC2616 Ordering number : ENA1822 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs VEC2616 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive

CPH6302

Contextual Info: Ordering number:EN5939 P-Channel MOS Silicon FET CPH6302 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2151 [CPH6302] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.6 1.6 0 to 0.1

Contextual Info: Ordering number : ENN7010 MCH3406 MCH3406 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • • Low ON-state resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3406] 0.3 0.25 • Package Dimensions 0.15 0.25 2

i232

Abstract: 2N7336 436D IRFG6110 IGD 001
Contextual Info: Data Sheet No. PD-9.436D INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SN7336 JA NTX2N7336 JANTXV2N7336 COMBINATION N AND P CHANNEL [2 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-19500/598] 100 Volt, 0.7 Ohm (N-Channel) and

Contextual Info: Ordering number:ENN5316A N-Channel Silicon MOSFET 2SK2555 DC/DC Converter Applications Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SK2555] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6 0.85 0.7

CPH5611

Abstract: TA72
Contextual Info: Ordering number : ENN7154 CPH5611 N-Channel Silicon MOSFET CPH5611 Ultrahigh-Speed Switching Applications • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.

ECH8620

Contextual Info: ECH8620 Ordering number : ENA0659 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 General-Purpose Switching Device Applications Features • • The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and