AT28C010 MIL Search Results

Contextual Info: PS-AT28C010 revision C MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-Bit PARALLEL EEPROM, MONOLITHIC SILICON Revision Written by Approved by Date C S.JAMES C. FERRE 03/01/08 1/24 PS-AT28C010 Rev C DOCUMENTATION CHANGE NOTICE Date of update Revision letter

ATMEL 0828

Abstract: at28c010 ATMEL Packing method EEPROM retention bake screening AT28C010-12DK-MQ AT28C010-12DK-SV
Contextual Info: PS-AT28C010 revision C MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-Bit PARALLEL EEPROM, MONOLITHIC SILICON Revision Written by Approved by Date C S.JAMES C. FERRE 03/01/08 1/24 PS-AT28C010 Rev C DOCUMENTATION CHANGE NOTICE Date of update Revision letter

Contextual Info: AT28C010 'S Features • Fast Read Access Time -120 ns • Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer • Fast Write Cycle Time Page Write Cycle Time -10 ms maximum 1 to 128 Byte Page Write Operation

28C010

Abstract: AT28C010 AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 15DM883 lm883
Contextual Info: AT28C010 Mil Features • • • • • • • • • • Fast Read Access Time - 120 ns Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation

at28c16 eeprom

Abstract: AT28C16E 5962-8852506 AT28C16 DM AT28C64E AT28C16 AT28C17 AT28C17E AT28C256 AT28C040
Contextual Info: PARALLEL EEPROM AT-A-GLANCE note 3 note 3 note 1 note 2 note 1 note 2 note 1 STANDARD VOLT Product AT28C16 AT28C16E AT28C17 AT28C17E AT28C64 AT28C64E AT28C64B AT28HC64B AT28C256 AT28C256E AT28C256F AT28HC256 AT28HC256E AT28HC256F AT28C010 AT28C010E AT28C040

Contextual Info: AT28C010 Mil Features • • • • • • • • • • Fast Read Access Time -1 2 0 ns Automatic Page Write Operation Internal Address and Data Latches for 12B-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time -1 0 ms Maximum

Contextual Info: AT28C010 Mil Features • • • • • • • • • • Fast Read Access Time -12 0 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time -1 0 ms maximum 1 to 128 Byte Page Write Operation

AT28C010-15FC

Abstract: AT28C010-15BM AT28C010-12BC 28C010 AT28C010-20BM At28c010-20bc
Contextual Info: AT28C010 Features • • Fast Read Access Time -120 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer • Fast Write Cycle Time Page Write Cycle Time -1 0 ms maximum 1 to 128 Byte Page Write Operation

CERAMIC LEADLESS CHIP CARRIER LCC 44

Abstract: AT28C010
Contextual Info: AT28C010 Mil Features • • • • • • • • • • Fast Read Access Tim e -1 2 0 ns Autom atic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Tim er Fast W rite Cycle Time Page W rite Cycle Tim e - 1 0 ms maximum

AT28C010-12LC

Abstract: AT28C010-12BC
Contextual Info: AT28C010 Features • • • • • • • • • • • Fast Read Access Time -1 2 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page W rite Cycle Tim e - 1 0 ms maximum

28C010 Atmel

Contextual Info: AT28C010 Features • • • • • • • • • • • Fast Read Access Time - 1 20ns Automatic Page Write Operation internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10ms maximum 1 to 128 Byte Page Write Operation

Contextual Info: AT28C010 Features • • • • • • • • • • • Fast Read Access Time -120 ns Automatic Page Write Operation Internal Address and Data Latches for 128 Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time -1 0 ms maximum 1 to 128 Byte Page Write Operation

Contextual Info: AT28C010 Mil Features • • • • • • • • • • Fast Read A ccess Tim e - 1 2 0 ns A utom atic Page W rite O peration Internal A ddress and Data Latches for 128-B ytes Internal Control Tim er Fast W rite C ycle Tim e P age W rite C ycle Tim e - 1 0 m s M axim um

CERAMIC LEADLESS CHIP CARRIER LCC 124

Abstract: AT28C010
Contextual Info: Features • Fast Read Access Time -120 ns • Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer • Fast Write Cycle Time Page Write Cycle Time -1 0 ms Maximum 1 to 128-Byte Page Write Operation • Low Power Dissipation

AT28C010

Abstract: 28C010 AT28C010-12 AT28C010-15 AT28C010-20 AT28C010E12
Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum

at28c010e-12ju

Contextual Info: Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time – 10 ms Maximum

Atmel 0541

Abstract: AT28C010
Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128-Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation

AT28C01OE

Abstract: tl 072 cn AT28C010 28C010 Atmel
Contextual Info: Features • Fast Read Access Tim e -1 2 0 ns • Autom atic Page W rite Operation - Internal Address and Data Latches for 128 Bytes - Internal Control Timer • Fast W rite Cycle Time - Page W rite Cycle Tim e - 1 0 ms Maximum - 1 to 128-byte Page W rite Operation

atmel 811

Abstract: AT28C010 Mil
Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation

AT28C010

Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • • – Internal Address and Data Latches for 128 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum

5962-3826707MUX

Abstract: Atmel 642 28C010 AT28C010 AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 44-PAD AT28C010-12DM
Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128-Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation

atmel 0737

Abstract: atmel 0541 AT28C010-25DM/883 Atmel 642 28C010 AT28C010 AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25
Contextual Info: Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 128-Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 128-Byte Page Write Operation

CERAMIC LEADLESS CHIP CARRIER LCC 44

Abstract: atmel at28C010 AT28C010 5962-38267
Contextual Info: Features * Fast Read Access Tim e -1 2 0 ns * Autom atic Page W rite Operation Internal Address and Data Latches for 128-Bytes Internal Control Tim er * Fast W rite Cycle Tim e Page W rite Cycle Tim e -1 0 ms Maximum 1 to 128-Byte Page W rite Operation * Low Power Dissipation

tsop 338

Abstract: 28c010 28C010 Atmel 4C016 4b23 4h5229 4A05 MIL-M-38535 2D93 6F9630
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C010 CMOS EEPROM RELIABILITY DATA* - 150°C DYNAMIC OPERATING LIFE TEST - CYCLE TEST - 200°C RETENTION BAKE - 125°C OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 15 PSIG PRESSURE POT