AT 9200 Search Results

diagram LG LCD TV circuits

Abstract: TNY275PN 32 inch LCD TV SCHEMATIC plc810 3m 1350f-1 diagram power supply LG 32 in LCD TV circuits K1058 lg lcd tv POWER SUPPLY SCHEMATIC orient 817A CS330060
Contextual Info: Title Reference Design Report for a 225 W 286 W Peak Power Factor Corrected LLC Power Supply Using HiperPLC (PLC810PG) 90 VAC to 265 VAC Input Specification 225 W (286 W Peak) Total Output Power 5 VSB at 0.5 W 5 V at 9.5 W 12 V at 48 W (60 W Peak) 24 V at 168 W (216 W Peak)

779P

Abstract: 476 capacitor 222J SBE778P400VAC Polypropylene CAPACITOR data
Contextual Info: Type 778P/779P, 400 VAC Polypropylene Film/Foil Capacitors SBE Type 778P/779P Orange Drop 400 Volts A-C Polypropylene Film/Foil Capacitors Features Insulation Resistance: 400,000 M⍀ minimum at +25°C 20,000 M⍀ minimum at +85°C 2,000 M⍀ minimum at +105°C

DC-13

Abstract: 109p04
Contextual Info: 12 V.DC 7 V . D C - 1 3 . 8 V.DC 0 . 1 5 A Max. a t 12 V.DC C u rre n t 9200 m in"1 9200 rpm at 12 V.DC ( Nominal) Speed N o te .2 Insulatinq Resistance 10 MO Min. a t 5 0 0 V.DC One minute at 500 V AC 50 /60 Hz Note.2 Dielectric Strength Operatinq Temp. Ranqe - 1 0 °C~+ 6 0 "C

spice

Abstract: diode 10e IR80CPQ20
Contextual Info: Electro-Thermal SPICE Schottky Diode Model suitable both at room temperature and at high temperature December 20th, 1999 Alberto Guerra and Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A.

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR FZT788B IS S U E 3 - OCTOBER 1995- - - FEATURES * * Low equivalent on-resistance; RCE|Sat 93mQ at 3A Gain of 300 at lc=2 A m p s and Very low saturation voltage

AR761

Abstract: AR203 AR204 AR76 AR762 PC9800 WIN95 J2D0096-19-22 PC-9800 AR76-202
Contextual Info: AR76-202 動作環境 PC9800シリーズ VX/RX/RA/DX/DA クロック12MHz以上 PC9800シリーズ 640kバイト以上 VM以降の機種で 16色表示可能機種 IBM-PC/AT互換機 IBM-PC/AT互換機 IBM-PC/AT互換機 Pentium/75MHz以上 386sX 16MHz以上

1200 Series

Abstract: Balanced Line Receivers Input Stages 1240 Series simple CB receiver THAT124X Jensen Transformers 1200P 1200S 1203S
Contextual Info: T H AT Corporation InGenius High-CMRR Balanced Input Line Receiver ICs THAT 1200, 1203, 1206 FEATURES APPLICATIONS • High CMRR: typ. 90 dB at 60 Hz · Extremely high common-mode input · Balanced Audio Line Receivers impedance · Maintains balance under real-world

Contextual Info: T H AT Corporation InGenius High-CMRR Balanced Input Line Receiver ICs THAT 1200, 1203, 1206 FEATURES APPLICATIONS • High CMRR: typ. 90 dB at 60 Hz · Extremely high common-mode input · Balanced Audio Line Receivers impedance · Maintains balance under real-world

Contextual Info: Bussmann Square Body – Flush End Contact 1250V/1300V IEC/U.L. 50-1400A Electrical Characteristics Rated Current I2t (A2S) RMSClearing Clearing Size Amps Pre-arc at 1000V at 1250V 50 135 815 1100 63 215 1300 1750 80 420 2500 3350 100 750 4450 5950 125

EXQ125-48S1V2

Contextual Info: EXQ125 48V Single Series | 100W DC/DC High Efficiency DC/DC Converters EXQ125 48V SERIES Single Output High efficiency topology, 91% typical at 3.3V, 92% typical at 5V High output current, high useable power Industry standard footprint Wide operating temperature, -40°C to +100°C baseplate temperature

Contextual Info: EXQ125 48V Single Series | 100W DC/DC High Efficiency DC/DC Converters EXQ125 48V SERIES Single Output High efficiency topology, 91% typical at 3.3V, 92% typical at 5V High output current, high useable power Industry standard footprint Wide operating temperature, -40°C to +100°C baseplate temperature

EN61000-4-2

Abstract: EN61000-4-3 EN61000-4-4 ETS300 EXQ125 SXA10 DC38A
Contextual Info: EXQ125 48V Single Series | 100W DC/DC High Efficiency DC/DC Converters EXQ125 48V SERIES Single Output High efficiency topology, 91% typical at 3.3V, 92% typical at 5V High output current, high useable power Industry standard footprint Wide operating temperature, -40°C to +100°C baseplate temperature

170M3444

Abstract: 170M6499 170M5440 170M3392 170M6547 170M6549 170M6498 170M3391 170M6345 170M6500
Contextual Info: Bussmann Square Body – Flush End Contact 1250V/1300V IEC/U.L. 50-1400A Electrical Characteristics Rated Current I2t (A2S) RMSClearing Clearing Size Amps Pre-arc at 1000V at 1250V 50 135 815 1100 63 215 1300 1750 80 420 2500 3350 100 750 4450 5950 125

170M6499

Abstract: 170M6500 170M6345 170M3444 170M6346 bussmann fuse 170M3444 170M4393 170M6498 170M5397 170M5446
Contextual Info: Bussmann Square Body – Flush End Contact 1250V/1300V IEC/U.L. 50-1400A Electrical Characteristics Rated Current I2t (A2S) RMSClearing Clearing Size Amps Pre-arc at 1000V at 1250V 50 135 815 1100 63 215 1300 1750 80 420 2500 3350 100 750 4450 5950 125

SUP90P06-09L

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

C1068

Abstract: SUP90P06-09L SUP90P06-09L-E3
Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

A9000N

Contextual Info: HIGH POWER, FIXED ATTENUATORS SERIES A9000N DC-18 GHz GENERAL INFORMATION These attenuators use high power laser trim m ed distributed thin film ele­ ments to provide broadband frequency response at power levels up to 50 watts. C onvection cooling by fins allow s full power operation at 25°C

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

Contextual Info: SUM110P06-08L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.008 at VGS = - 10 V - 60 0.0105 at VGS = - 4.5 V • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg Tested ID (A)d

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

272c

Abstract: SUM110P06-08L SUM110P06-08L-E3 s8027
Contextual Info: SUM110P06-08L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.008 at VGS = - 10 V - 60 0.0105 at VGS = - 4.5 V • TrenchFET Power MOSFET • Package with Low Thermal Resistance • 100 % Rg Tested ID (A)d

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS

Contextual Info: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS