AT 7312 Search Results

Contextual Info: SIEMENS BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data • Cascadable 50 Q-gain block • 16 dB typical gain at 1.0 GHz • 12 dBm typical P_1db at 1.0 G • 3 dB-bandwidth: DC to 1.2 G\ R F IN o Circuit Diagram EHM 7312 Type Marking Ordering Code

australia heat sink

Abstract: FCA02C015
Contextual Info: Industrial Microphotonics Company 15W CW Fiber Bundle Coupled Laser Diode Array Part Number: FCA02C015 FIBER BUNDLE COUPLED ARRAY OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CW Power Output CONDITIONS MIN 1 32A at 25˚ C Heat Sink 15 15W at 25˚ C Heat Sink

cd4013b

Abstract: CD413B CD4019BMS IOH15 CD4001B ic pin diagram TA 7308 of the IC CD4013B
Contextual Info: CD4019BMS CMOS Quad AND/OR Select Gate November 1994 Features Pinout • High Voltage Type 20V Rating CD4019BMS TOP VIEW • Medium Speed Operation tPHL = tPLH = 60ns (typ.) at CL = 50pF, VDD = 10V • Standardized Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V

datasheet of the IC CD4013B

Abstract: of the IC CD4013B CD413B CD4019BMS IOH15 msi 7309
Contextual Info: CD4019BMS CMOS Quad AND/OR Select Gate November 1994 Features Pinout • High Voltage Type 20V Rating CD4019BMS TOP VIEW • Medium Speed Operation tPHL = tPLH = 60ns (typ.) at CL = 50pF, VDD = 10V • Standardized Symmetrical Output Characteristics • 100% Tested for Quiescent Current at 20V

Contextual Info: Features • Fast Read Access Time - 45 ns • Low-Power CMOS Operation – 100 µA max. Standby – 25 mA max. Active at 5 MHz FT27C010L – 35 mA max. Active at 5 MHz (FT27C010) • JEDEC Standard Packages – 32-Lead CDIL/LCC/JLCC +Custom Ceramic packages

Memory

Abstract: FT27C010 L20062
Contextual Info: Features • Fast Read Access Time - 45 ns • Low-Power CMOS Operation – 100 µA max. Standby – 25 mA max. Active at 5 MHz FT27C010L – 35 mA max. Active at 5 MHz (FT27C010) • JEDEC Standard Packages – 32-Lead CDIL/LCC/JLCC +Custom Ceramic packages

Si7212DN-T1-E3

Abstract: Si7212DN-T1-GE3 Si7212DN
Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 APPLICATIONS PowerPAK 1212-8 • Synchronous Rectification • Intermediate Driver

Y51 h 85c

Abstract: 4560 opamp 7377 y133 KS0606 Y176 CTR CAPACITOR DATASHEET Y152 Y228 Y239
Contextual Info: 240CH SOURCE DRIVER FOR TFT LCD KS0606 INTRODUCTION KS0606 is 240 output liquid crystal display LCD source driver. It is used in the liquid crystal display panel for pocket sized TV, CNS etc. After sampling and holding at the SAMPLE-HOLD circuit at the clock synchronized timing, the R,G,B, 3CH. video

Contextual Info: MILrC-39003 Military Style Tantalum Capacitors MIL-C-39003 DESIGN AND CONSTRUCTION D.C. LEAKAGE D C. leakage shall be measured using the dc rated voltage at ± 2 percent at the applicable test temperature, after a maximum electri­ fication period of 5 minutes. A 1,000-ohm resistor shall be placed in

Y51 h 85c

Abstract: 7377 y133 Y134 Y107 Y228 DI01 KS0606 Y239 transistor+Bc+542
Contextual Info: 240CH SOURCE DRIVER FOR TFT LCD KS0606 INTRODUCTION KS0606 is 240 output liquid crystal display LCD source driver. It is used in the liquid crystal display panel for pocket sized TV, CNS etc. After sampling and holding at the SAMPLE-HOLD circuit at the clock synchronized timing, the R,G,B, 3CH. video

Si7212DN

Abstract: Si7212DN-T1-E3 71685
Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ) 7 • TrenchFET Gen II Power MOSFET • 100 % Rg Tested • Space Savings Optimized for Fast

Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ) 7 • TrenchFET Gen II Power MOSFET • 100 % Rg Tested • Space Savings Optimized for Fast

nokia 3110 network section

Abstract: X 4202S nokia 3110 gsm 4201S CP210x USB to UART Bridge version 1.1 software 3100 nokia hasp ieee-488 gpib usb nokia display UART to IEEE-488
Contextual Info: 7311 Lector Basic 7312 Lector Enhanced 7315 Scriptor Getting Started Manual Notice Every effort was made to ensure that the information in this document was accurate at the time of printing. However, information is subject to change without notice, and Aeroflex reserves the

Si7212DN

Abstract: Si7212DN-T1-E3
Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ) 7 • TrenchFET Gen II Power MOSFET • 100 % Rg Tested • Space Savings Optimized for Fast

atmel part "marking"

Abstract: Atmel MARKING CODE FT27C1024-15KMB-AT 44JLCC
Contextual Info: SCD#QM5305 Source Control Drawing Upscreening/Manufacturing Specification P/N FT27C1024-15KMB-AT Title Page . List of Effective Pages .

Si7212DN

Abstract: Si7212DN-T1-E3 Si7212DN-T1-GE3
Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching

Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching

TSOP 54 land pattern

Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching

Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching

Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching

Contextual Info: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching

Contextual Info: KC73129UC 1/3 INCH CCD IMAGE SENSOR FOR PAL INTRODUCTION The KC 73129UC is an interline transfer CCD area im age sensor developed fo r PAL 1/3inch optical form at video cam eras, surveillance cam eras, object detectors and im age pattern recognizers. High sensitivity is achieved

certificate of conformity

Contextual Info: BS EN ISO 9001:2000 accreditation BS Certificate No. RS 21690 By Mike Salmon at 3:20 pm, 2/8/05 SCD # QM5336 Source Control Drawing Upscreening/Manufacturing Specification P/N FTS7M1003S40P Title Page .

FCA03C060

Contextual Info: Industrial Microphotonics Company 60W CW Fiber Bundle Coupled Laser Diode Array Part Number: FCA03C060 FIBER BUNDLE COUPLED ARRAY • Available wavelengths 785-1000nm OPTICAL CHARACTERISTICS PRELIMINARY ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS 32A at 25˚ C Heat Sink