| ASI10646
Abstract: TVU012 
Contextual Info: TVU012 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 8L FLG DESCRIPTION: C D The ASI TVU012 is Designed for FULL R G FEATURES: O F E .1925 • Input Matching Network • • Omnigold  Metalization System .125 K 35 V .115 / 2.92 .065 / 1.65 D 140 W @ TC = 25 C
 | Original
 | TVU012 
TVU012
ASI10646 
ASI10646 | PDF | 
| ASI10646
Abstract: TVU012 
Contextual Info: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is Designed for TV Band IV & V Applications. PACKAGE STYLE .400 8L FLG C D A B F U LL R FEATURES: G • Input Matching Network • Common emitter • Omnigold  Metalization System with eutectic die bonding
 | Original
 | TVU012 
TVU012
ASI10646 | PDF | 
| TVU012
Abstract: 420 NPN Silicon RF Transistor ASI10646 
Contextual Info: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.
 | Original
 | TVU012 
TVU012
420 NPN Silicon RF Transistor
ASI10646 | PDF | 
| BLV57
Abstract: ASI10646 
Contextual Info: BLV57 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV57 is Designed for use as push-pull amplifier, primarily in linear UHF TV transmitting Applications. PACKAGE STYLE .400 8L FLG C D A B F U LL R FEATURES: G • Input Matching Network • Common emitter
 | Original
 | BLV57 
BLV57
ASI10646 
ASI10646 | PDF |