ASI10639 Search Results

ASI10639 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ASI10639		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR	Original	PDF	17.83KB	1

ASI10639 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
DB30A Abstract: ASI10639 Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI OSC-2.0SM is Designed for B .060 x 45° CHAMFER C E G FEATURES: L • • • Omnigold Metalization System 700 mA VCC 30 V PDISS 17.6 W @ TC ≤ 50 C TJ -65 OC to +200 OC	Original	ASI10639 DB30A ASI10639	PDF
Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 2L FLG DESCRIPTION: A ØD The ASI OSC-2.0SM is Designed for General Purpose Oscillator Applications up to 2.3 GHz. B .060 x 45° CHAMFER C E G FEATURES: L • VCC = 21 V • Common Collector • Omnigold Metalization System	Original		PDF
OSC-2.0SM Abstract: ASI10639 Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W A ØD B .060 x 45° CHAMFER	Original		PDF

Catalog Datasheet

Type

Document Tags

PDF

DB30A

Abstract: ASI10639
Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG A DESCRIPTION: ØD The ASI OSC-2.0SM is Designed for B .060 x 45° CHAMFER C E G FEATURES: L • • • Omnigold Metalization System 700 mA VCC 30 V PDISS 17.6 W @ TC ≤ 50 C TJ -65 OC to +200 OC

Original

ASI10639 DB30A ASI10639

PDF

Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 2L FLG DESCRIPTION: A ØD The ASI OSC-2.0SM is Designed for General Purpose Oscillator Applications up to 2.3 GHz. B .060 x 45° CHAMFER C E G FEATURES: L • VCC = 21 V • Common Collector • Omnigold Metalization System

Original

PDF

OSC-2.0SM

Abstract: ASI10639
Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W A ØD B .060 x 45° CHAMFER

Original

PDF