ASI10597 Search Results

ASI10597 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ASI10597		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR	Original	PDF	17.14KB	1

ASI10597 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF50-12S is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely	Original	HF50-12S HF50-12S 112x45°	PDF
ASI10597 Abstract: HF50-12S Contextual Info: HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W PEP • Omnigold Metalization System E ØC E	Original	HF50-12S HF50-12S 112x45° ASI10597 ASI10597	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI HF50-12S is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely

Original

HF50-12S HF50-12S 112x45°

PDF

ASI10597

Abstract: HF50-12S
Contextual Info: HF50-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF50-12S is Designed for PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES: • PG = 16 dB min. at 50 W/30 MHz • IMD3 = -30 dBc max. at 50 W PEP • Omnigold Metalization System E ØC E

Original

HF50-12S HF50-12S 112x45° ASI10597 ASI10597

PDF