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Catalog Datasheet	Type	Document Tags	PDF
d 317 transistor Abstract: LTE21015R common emitter amplifier b 342 d transistor Contextual Info: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting	Original	LTE21015R LTE21015R ASI10473 d 317 transistor common emitter amplifier b 342 d transistor	PDF

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d 317 transistor

Abstract: LTE21015R common emitter amplifier b 342 d transistor
Contextual Info: LTE21015R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LTE21015R is Designed for Class A Common Emitter Amplifier Applications to 2.3 GHz. FEATURES INCLUDE: PACKAGE STYLE .250 2L FLG • Replacement for Philips LTE21015R • Gold Metalization • Emitter Ballasting

Original

LTE21015R LTE21015R ASI10473 d 317 transistor common emitter amplifier b 342 d transistor

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