ASC CAPACITOR 36 Search Results

CW20C104K

Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Contextual Info: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,

X329F

Contextual Info: « ^CAPACITORS Snubber Capacitors 329 and X329 Dimensions 1.65" (Step * Style 329S & X329S L J H W- .600“ .550 (14mm) Standard ASC IGBT Capacitor Mounting i .025" THK Terminal 111' "^1 ]r - 1 — I L—J U .240" Step Terminal Holes Style 329S & X329S and

9443

Abstract: 30 pin simm memory dynamic MCM54100A MCM94430S60 MCM94430S70 MCM94430SG60 MCM94430SG70 Nippon capacitors MOTOROLA CP-340
Contextual Info: MOTOROLA Order this document by MCM94430/D SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic RAM Module The MCM94430 is a 36M dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30–lead single–in–line memory module (SIMM) consisting of two MCM517400B and one MCM54100A DRAMs

5Bp power control

Abstract: Motorola CMOS Dynamic RAM 2m x 8 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM36204/D SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36204 is a 72M dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double-sided 72-lead single-inline memory module (SIMM) consisting of eighteen MCM54400AN DRAMs

simm 72 dram

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM36104/D SEMICONDUCTOR TECHNICAL DATA MCM36104 1M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory

polystyrene TRW capacitor

Contextual Info: Polystyrene Metallized Carrier Capacitors Wrap & Fill Case Type X863 Formerly TRW X1263 Series • • • • • • • Self-Healing Subminiature Size Excellent Retrace Extremely High IR Very Low Dielectric Absorption High Voltage Breakdown Low Controlled Negative TCC:

Contextual Info: MICRONAS INTERMETALL ASC 3553O Audio Stereo Codec MICRONAS Edition Aug. 5, 1998 6251-333-3DS ASC 3553O Contents Page Section Title 3 1. Introduction 3 3 3 3 3 4 4 4 5 5 5 5 5 6 6 6 6 7 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.10. 2.11. 2.12. 2.13.

MCM94000

Abstract: MCM94000AS70 MCM54100A MCM94000AS60 MCM94000ASG60 MCM94000ASG70 MCM94000SC70 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM94000/D SEMICONDUCTOR TECHNICAL DATA MCM94000 4M x 9 Bit Dynamic Random Access Memory Module The MCM94000 is a 36M dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30–lead single–in–line memory

L3N1

Abstract: bt 2025 bh
Contextual Info: ASC 35530 Contents Page Section Title 3 1. Introduction 3 3 3 3 3 4 4 4 2. Functional Description Analog Input Multiplexer Analog Input Gain Analog Output Attenuation Output Mute Digital I/O Port Valid Data Indicator Automatic Sampling Rate Detection Other Sampling Rates

Nippon capacitors

Contextual Info: MOTOROLA Order this document by MCM36404/D SEMICONDUCTOR TECHNICAL DATA MCM36404 Product Preview 4M x 36 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM36404 is a dynamic random access memory DRAM module organized as 4,194,304 x 36 bits. The module is a single–sided 72–lead

SM5362000

Abstract: SM5362000-7
Contextual Info: SM5362000 March 1994 Rev 2 SMART Modular Technologies SM5362000 8MByte 2M x 36 CMOS DRAM Module General Description Features The SM5362000 is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line memory module

simm 72 dram

Abstract: MCM36800AS60 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM36800/D SEMICONDUCTOR TECHNICAL DATA MCM36800 8M x 36 Bit Dynamic Random Access Memory Module AS PACKAGE SIMM MODULE CASE 866J–01 TOP VIEW The MCM36800 is a dynamic random access memory DRAM module organized as 8,388,608 x 36 bits. The module is a 72–lead single–in–line memory module

MCM36400ASH60

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM36400/D SEMICONDUCTOR TECHNICAL DATA MCM36400 4M x 36 Bit Dynamic Random Access Memory Module AS PACKAGE SIMM MODULE CASE 866J–01 The MCM36400 is a dynamic random access memory DRAM module organized as 4,194,304 x 36 bits. The module is a 72–lead single–in–line memory module

Nippon capacitors

Contextual Info: MOTOROLA Order this document by MCM36804/D SEMICONDUCTOR TECHNICAL DATA MCM36804 Product Preview 8M x 36 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM36804 is a dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double–sided 72–lead

Contextual Info: M53640800DW0/DB0 M53640810DW0/DB0 DRAM MODULE M53640800DW0/DB0 & M53640810DW0/DB0 EDO Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5364080(1)0D

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56SW3272ESNK-6A/7A 256MB Unbuffered EDO DRAM DIMM 32M-word x 72-bit, 4k Refresh, 2 Bank Module 36 pieces of 16M × 4 components ADE-203-840 (Z) Preliminary Rev. 0.0 Oct. 29, 1997 Description The HB56SW3272ESNK is a 32M × 72 dynamic RAM module, mounted 36 pieces of 64-Mbit DRAM

HM5165405

Abstract: Hitachi DSA00196 Nippon capacitors
Contextual Info: HB56SW3272ESNK-6A/7A 256MB Unbuffered EDO DRAM DIMM 32M-word x 72-bit, 4k Refresh, 2 Bank Module 36 pcs of 16M × 4 components ADE-203-840 (Z) Preliminary Rev. 0.0 Oct. 29, 1997 Description The HB56SW3272ESNK is a 32M × 72 dynamic RAM module, mounted 36 pieces of 64-Mbit DRAM

256Kx1 dram pinout

Contextual Info: SM536256 August 1994 Rev 2 SMART Modular Technologies SM536256 1MByte 256K x 36 CMOS DRAM Module General Description Features The SM536256 is a high performance, 1-megabyte dynamic RAM module organized as 256K words by 36 bits, in a 72-pin, leadless, single-in-line memory module

Contextual Info: >4SC DV/DT Ratings Standard Capacitor DV/DT Ratings Below are tables listing the DV/DT ratings for the standard capacitor types. The data within these tables can be used to determine the maximum peak pulse current that these products can withstand. Unusual waveforms and/or duty cycles may require

Contextual Info: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver

EM4083TP16A-007

Abstract: EM4083 hf ask lf Receiver tuning capacitors EM4083 AN415 C4083 EM6640 TSSOP16 TSSOP-16 amplifier diagram
Contextual Info: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver

EM4083TP16A-007

Abstract: 16PF EM4083 EM-408 C4083 EM6640 TSSOP16 TSSOP-16 7136 DIODE BAT
Contextual Info: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver

K752

Contextual Info: Types X386 rs / X387 (rk) / X388 / X389 Metallized Polypropylene Capacitors Oil-Filled / Metal Encased See Page 54 • 50% Size and Weight Reduction over Conventional Designs • Extremely Low Losses and Heat Dissipation • Non-PCB SPEARINOL III Oil

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36100R8 Product Preview 1M x 36 Bit Dynamic Random Access Memory Card The MCM36100R8 is a 5 V DRAM Memory Card organized as a single memory bank of 1,048,576 x 36 bits. The card is a JEDEC-standard Type 1, 88-pin DRAM