AS7C3256 Search Results

Contextual Info: 32Kx8 3.3V SRAM AS7C3256 Logic Block Diagram Features ♦ High Performance CMOS: tAA=10-25 ns ♦ Fast OE access: t0 E=3-6 ns ♦ Very low power - 216 m W @ 100 M H z - 3.6 m W @ 10 M H z standby - 1.1 mW @ • I/07 10 M H z standby: L version ♦ Automatic CE power down

Contextual Info: High Performance 32KX83.3Y CMOS SRAM •■ II AS7C3256 AS7G3256L L ow v o ltage 3 2 K x 8 C M O S SR A M Features • • • • O rganization: 32,7 6 8 w o rd s x 8 bits Single 3.3 ± 0.3V p o w e r supply 5V tolerant I /O specification H igh speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e

Contextual Info: Advance information •■ Il AS7C3256K36Z AS7C3256K32Z II 3.3V 256Kx32/36 synchronous burst SRAM with ZBT1 Features • • • • • • • • • • M ultiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint

Contextual Info: A Advance information •■ Il AS7C3256K36P AS7C3256K32P 3.3V 256Kx32/36 pipeline burst synchronous SRAM Features • Organization: 262,144 words x 32 or 36 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3 .5 /3 .8 /4 /5 ns

AS7C3256PFS18A

Abstract: TMS320C6X AS7C3256PFD16A AS7C3256PFD18A AS7C3256PFS16A A201D
Contextual Info: April 2000 Advance information AS7C3256PFS16A AS7C3256PFS18A 3.3V 256K x 16/18 pipeline burst synchronous SRAM • Organization: 262,144 words × 16 or 18 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.5/3.8/4/5 ns

ADA17

Contextual Info: Advance information •■ I l AS7C3256K36Z AS7C3256K32Z A 3.3V 2 5 6 K x 32/36 synchronous burst SRAM with ZBT1 Features Multiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint Byte write enables Qock enable for operation hold

Contextual Info: AS7C3256 3.1V 32Kx8 CMOS SRAM Features •O iganization: 32,7 68 w o ris x 8 b i s • Singie 3 3 ± 0 3V pow e r sappiy • H igh qpesd - 1 2 / 1 5 / 2 0 nsaddiess access tin e - 3 / 4 / 5 ns output enable access tin e •Veiy low pow e r consjm ption -Active: 198 mW max, 12 ns cycle

AS7C256A-15JI

Abstract: AS7C256A AS7C3256A
Contextual Info: March 2001 Advance Information AS7C256A AS7C3256A 5V/3.3V 32K X 8 CMOS SRAM Common I/O Features • Very low power consumption: STANDBY - 11 mW (AS7C256A) / max CMOS I/O - 3.6 mW (AS7C3256A) / max CMOS I/O • AS7C256A (5V version) • AS7C3256A (3.3V version)

Contextual Info: Il High Perform ance 32Kx8 CMOS SRAM AS7C3256 3.3V 32K x8 C M O S SR A M C o m m o n I/O I F E A T U R E S _ • Single 3.3V + 0.3V Power Supply • 2.0V Data Retention • Organization: 32,768 words x 8 bits • TTL compatible I/O

Contextual Info: AS7C3256 3.3V 32Kx8 CMOS SRAM Features • Organization: 32,768 words x 8 bits • Single 3.3 ± 0.3V power supply • High speed - 1 0 /1 2 /1 5 /2 0 ns address access time - 3 / 3 / 4 / 5 ns output enable access time • Very low power consumption - Active: 198 mW max, 12 ns cycle

AS7C3256PFD16A

Abstract: AS7C3256PFD18A AS7C3256PFS16A AS7C3256PFS18A
Contextual Info: April 2000 Advance information AS7C3256PFD16A AS7C3256PFD18A 3.3V 256K x 16/18 pipeline burst synchronous SRAM • Organization: 262,144 words × 16 or 18 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3.5/3.8/4/5 ns

Contextual Info: OCTOBER ì 999 AS7C3256 5V /3 ,3V 3 2 K x B CMOS SRAM [Com m on I/O Features • A S7C 256 5V v ersio n ) V ery lo w p o w e r c o n s u m p tio n : STANDBY • A S 7C 3256 (3.3V v ersio n ) - 11 m W (A S7C 256) / m a x CMOS I / O • In d u stria l a n d c o m m e rc ia l te m p e ra tu re

Contextual Info: A Advance information •■ I l AS7C3256K36Z AS7C3256K32Z 3.3V 256Kx32/36 synchronous burst SRAM with NTD Features • • • • • • • • • Multiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint

soj 36

Abstract: AS6C4008 AS6C4016 TSOP II 44 AS7C34096A AS6C62256 AS7C1025C AS7C256A AS6C6264 AS7C31024B
Contextual Info: Ver. 4 Aug 29 , 2008 3.3V Fast Asynchronus SRAMs Alliance Part Number Density/ Organization Vcc(V) Speed (ns) Operating Temperature Operating Current (mA) Standby Current (mA) AS7C3256A 256K (32K x 8) 3.3V 10/12/15/20 Industrial (-40C to 85C) Commercial temp (0C to 70C)

Contextual Info: H!gh Performance 32KxS 3.3V CMOS SRAM p i AS7C3256 AS7C3256L Low Voltage 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply • Easy memory expansion with CE and OE inputs

Contextual Info: AS7C3256 3.3V 32Kx8 CMOS SRAM 1O rganization: 3 2 ,7 6 8 w ords x 8 bits 1Single 3.3 ± 0.3V pow er supply 1H igh speed - 1 2 /1 5 /2 0 ns address access tim e - 3 / 4 / 5 ns output enable access tim e 1Very low pow er consum ption - Active: 198 m W max, 12 ns cycle

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

6A14

Abstract: TSOP8
Contextual Info: Features • Organization: 32,768 words x 8 bits • Single 3.3 ± 0.3V power supply • High speed - 12 / 1 5 /2 0 ns address access time - 3 /4 /5 ns output enable access time • Very low power consumption - Active: 198 mW max, 12 ns cycle - Standby: 3.6 mW max, CMOS I/O

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

Contextual Info: $GYDQFHLQIRUPDWLRQ $6&.= $6&.= 9.ðV\QFKURQRXVEXUVW65$0ZLWK17'Œ  HDWXUHV • Multiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint • Byte write enables • Clock enable for operation hold

ADM809RAR

Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
Contextual Info: DISCLAIMER Alliance Semiconductor Corporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Alliance Semiconductor does not assume any responsibility for use of any circuitry described other than the circuitry embodied

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C