APTM100H40FT3G Search Results

APT0406

Abstract: APT0502 APTM100H40FT3G
Contextual Info: APTM100H40FT3G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 21A @ Tc = 25°C Full - Bridge MOSFET Power Module 13 14 Application Q1 • • • • Q3 18 11 22 7 23 8 19 10 Q2 • 4 27 3 30 29 31 15 32 16 R1 28 27 26 25 Features Q4 26 23 22 • • •

Contextual Info: APTM100H40FT3G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 21A @ Tc = 25°C Full - Bridge MOSFET Power Module 13 14 Application Q1 • • • • Q3 18 11 22 7 23 8 19 10 Q2 • 4 27 3 30 29 31 15 32 16 R1 28 27 26 25 Features Q4 26 23 22 • • •

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.