APT30 Search Results

APT30S20B

Abstract: APT20M36BLL APT30S20S
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30S20B APT30S20S 200V 200V 45A 45A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses

Contextual Info: APT30M85SVR 40A 0.085Ω 300V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT30GT60KR

Abstract: APT30GT60KRG
Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60KR G 600V APT30GT60KR APT30GT60KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO-220 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast

APT30GT60BRDL

Contextual Info: TYPICAL PERFORMANCE CURVES APT30GT60BRDL G 600V APT30GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers

APT30F50B

Abstract: APT30F50S MIC4452
Contextual Info: APT30F50B APT30F50S 500V, 30A, 0.19Ω Max, trr ≤230ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT20M36BLL

Abstract: APT30S20BCTG
Contextual Info: 1 3 TO -24 2 7 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT30S20BCTG 1 2 Pb 200V 2x45A Fully compliant with RoHS 2002/95 Directive. 3 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode

APT10035LLL

Abstract: APT30D100BCA APT30D100BCAG
Contextual Info: 1000V 2x18A APT30D100BCA APT30D100BCAG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

APT30M30B2LL

Abstract: APT30M30LLL
Contextual Info: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT20M36BLL

Abstract: APT30S20BCT US60A
Contextual Info: 1 3 TO -24 2 7 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT30S20BCT 1 2 200V 2x45A 3 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses

Contextual Info: APT30GT60KR A dvanced W 7Æ P o w e r Te c h n o lo g y • R 6oov 55a Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.

Contextual Info: A dvanced P ow er Te c h n o lo g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT30D20B 200V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: APT30M19JVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOSV 130A 0.019CÌ iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: A dvanced P o w er Te c h n o l o g y 8 Back of Case -Cathode - APT30D40S - 1 400V 30A 2 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: APT30M40JVR ADVANCED P ow er Te c h n o l o g y 300v 70a 0 .0 4 0 0 POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

14240

Abstract: fast diode SOT-227
Contextual Info: APT30M17JFLL 0.017Ω 300V 135A POWER MOS 7TM FREDFET MAXIMUM RATINGS Symbol VDSS ID S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

lm 1035

Contextual Info: APT30GT60CR 600V 30A Thunderbolt IGBT™ TO-254 TO-254 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

APT30DQ60K

Abstract: APT30DQ60KG APT30GT60BR
Contextual Info: 600V 30A APT30DQ60K APT30DQ60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE K PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

TO-258AA Package

Contextual Info: 1 3 2 1 - Anode 1 2 - Common Cathode 3 - Anode 2 APT30D20HCT 1 2 200V 2x30A 3 ULTRAFAST SOFT RECOVERY RECTIFIER DIODES PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching

APT30M70BVR

Contextual Info: APT30M70BVR 48A 0.070Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Contextual Info: 1 3 TO -25 8 1 - Cathode 2 - N/C 3 - Anode APT30DS60H 1 2 600V 30A 3 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

ad 3830

Contextual Info: APT30M61BFLL APT30M61SFLL 300V 54A 0.061Ω POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON

apt30d60bhb

Contextual Info: 1 3 TO -24 7 2 1 - Cathode 1 2 - Anode 1 Cathode 2 3 - Anode 2 APT30D60BHB 1 2 600V 2x30A 3 ULTRAFAST SOFT RECOVERY RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Output Rectifiers for Switchmode • Ultrafast Recovery Times • Low Losses

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

30GT60BRD

Abstract: 30gt60br 30GT60B 30GT60 30gt
Contextual Info: APT30GT60BRD APT30GT60BRD 600V 55A Thunderbolt IGBT™ & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode FRED offers