APT15DF60 Search Results

diode 17a 400v

Contextual Info: APT6038BFLL APT6038SFLL 600V 17A 0.380Ω POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8GT60KR

Contextual Info: APT8GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop

Contextual Info: APT6029BFLL APT6029SFLL 600V 21A 0.290Ω POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT12GT60KR 600V Thunderbolt IGBT TO-220 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. G • Low Forward Voltage Drop

APT30GP60BDF1

Contextual Info: TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

Contextual Info: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

APT5024BFLL

Abstract: APT5024SFLL
Contextual Info: APT5024BFLL APT5024SFLL 500V 22A 0.240Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT17N80BC3

Abstract: APT20N60BC3 APT20N60SC3
Contextual Info: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package

Contextual Info: APT6021BFLL APT6021SFLL 600V 29A 0.210Ω POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT15GP60K 600V POWER MOS 7 IGBT TO-220 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

7400 IC

Abstract: data sheet IC 7400 IC 7400 IC 7400 data sheet tl 7400 APT30GP60B APT30GP60S
Contextual Info: APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

APT20N60BC3

Abstract: APT20N60SC3 207A
Contextual Info: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package

Contextual Info: APT5018BFLL APT5018SFLL 500V 27A 0.180Ω POWER MOS 7 R FREDFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6038BFLL APT6038SFLL 600V 17A 0.380Ω POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

IC 7428 datasheet

Abstract: APT15GP60BDF1 T0-247
Contextual Info: APT15GP60BDF1 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT30GP60B

Abstract: T0-247 T0247 package
Contextual Info: APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,

IC 7413

Abstract: APT15GP60B T0-247
Contextual Info: APT15GP60B 600V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT5024BLL

Abstract: APT5024SLL
Contextual Info: APT5024BLL APT5024SLL 500V 22A 0.240Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT5523BFLL APT5523SFLL 550V 24A 0.230Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT15GP60BDL G 600V, 15A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

0380r

Abstract: APT6038BLL APT6038SLL
Contextual Info: APT6038BLL APT6038SLL 600V 17A 0.380Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT6025BLL

Abstract: APT6025SLL
Contextual Info: APT6025BLL APT6025SLL 600V 24A 0.250Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT12067B2LL G APT12067LLL(G) 18A 0.670Ω 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

Contextual Info: APT5018BLL G APT5018SLL(G) 500V 27A 0.180Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching