APT 2100 Search Results
APT 2100 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 20021221-00010T4LF |
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Minitek127®, Wire to Board connector, Shrouded vertical header, Surface Mount, Double Row, 10 Positions, 1.27mm (0.500in) Pitch. | |||
| 20021121-00024T4LF |
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Minitek127®, Board to Board connector, Unshrouded vertical header, Surface Mount, Double Row, 24Positions, 1.27mm (0.5inch) pitch. | |||
| 20021121-00008T8LF |
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Minitek127®, Board to Board connector, Unshrouded vertical header, Surface Mount, Double Row, 8Positions, 1.27mm (0.5inch) pitch. | |||
| 20021121-00006C8LF |
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Minitek127®, Board to Board connector, Unshrouded vertical header, Surface Mount, Double Row, 6Positions, 1.27mm (0.5inch) pitch. | |||
| 54112-110402100LF |
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BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 40 Positions, 2.54mm (0.100in) Pitch. |
APT 2100 Price and Stock
Samtec Inc FW-25-05-L-D-372-100-A-P-TRBoard to Board & Mezzanine Connectors Flexible Micro Board Stacking Header |
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FW-25-05-L-D-372-100-A-P-TR |
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Samtec Inc FW-05-05-L-D-462-100-A-P-TRBoard to Board & Mezzanine Connectors Flexible Micro Board Stacking Header |
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FW-05-05-L-D-462-100-A-P-TR |
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Samtec Inc FW-05-05-LM-D-462-100-A-P-TRBoard to Board & Mezzanine Connectors Flexible Micro Board Stacking Header |
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FW-05-05-LM-D-462-100-A-P-TR |
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Toradex Inc 22121000 - USB-C PD 100W Power AdapterDesktop AC Adapters USB-C PD 100W Power Adapter |
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22121000 - USB-C PD 100W Power Adapter |
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APT 2100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MA4GM316Contextual Info: M/A-COM ADV SEMICONDUCTOR Apt< S7 E D Sk42163 0D0034b h r ^ /3 - o j MA4GM316A-500 MA4GM316A SERIES GaAs M M IC D C -2 GHz 6 0 dB Variable Attenuator 2000 2010 2012 2100 Features • SINGLE* OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE ■ 60 dB ATTENUATION RANGE |
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Sk42163 0D0034b MA4GM316A-500 MA4GM316A MA4GM316 | |
4x4 mimoContextual Info: Agilent N7109A Data Sheet Multi-Channel Signal Analyzer DISCOVER the Alternatives. . Agilent MODULAR Products AD APT A S M IM O T ES T IN G E V O L V E S OV ERV I EW F eatures In the development of next-generation wireless technologies, MIMO measurements are becoming an essential |
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N7109A N7109A 5990-6732EN 4x4 mimo | |
NS6040
Abstract: apt 2100
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APTM100UM45F-AlN NS6040 apt 2100 | |
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Contextual Info: APTM120UM70F-AlN Single switch MOSFET Power Module SK S D DK G S D SK Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance |
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APTM120UM70F-AlN APTM120UM70F | |
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Contextual Info: APTM100UM45F-AlN VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Single Switch MOSFET Power Module SK S D DK G S Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode |
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APTM100UM45F-AlN | |
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Contextual Info: APTM50AM38ST Phase leg Series & parallel diodes MOSFET Power Module NTC2 VBUS Q1 G1 OUT S1 Q2 G2 0/VBU S S2 NTC1 OUT VBUS 0/VBUS OUT S1 S2 NTC2 G1 G2 NTC1 VDSS = 500V RDSon = 38mW max @ Tj = 25°C ID = 90A @ Tc = 25°C Application • Motor control · Switched Mode Power Supplies |
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APTM50AM38ST | |
APT0406
Abstract: APTGT150SK60T
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APTGT150SK60T APT0406 APTGT150SK60T | |
2100AContextual Info: APTGT150DA60T VCES = 600V IC = 150A @ Tc = 80°C Boost chopper Trench + Field Stop IGBT Power Module VBUS VB US SENS E NT C2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 E2 NT C1 0/VBU S G2 OUT |
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APTGT150DA60T 2100A | |
APT0406
Abstract: APTGT150DU60T
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APTGT150DU60T APT0406 APTGT150DU60T | |
APT0406
Abstract: APTGT150A60T
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APTGT150A60T APT0406 APTGT150A60T | |
dk 434Contextual Info: APTM100UM45D-AlN Single switch with Series diode MOSFET Power Module SK VDSS = 1000V RDSon = 45mΩ max @ Tj = 25°C ID = 215A @ Tc = 25°C Application D G DK DK S D SK G • Zero Current Switching resonant mode Features • Power MOS 7 MOSFETs - Low RDSon |
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APTM100UM45D-AlN dk 434 | |
290A transistorContextual Info: APTM20UM03F-AlN Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7 FREDFETs - Low RDSon - Low input and Miller capacitance |
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APTM20UM03F-AlN APTM20UM03F 290A transistor | |
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Contextual Info: APTM120UM70D-AlN Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70mΩ max @ Tj = 25°C ID = 171A @ Tc = 25°C Application • Zero Current Switching resonant mode SK D DK DK S D SK G Benefits • Outstanding performance at high frequency operation |
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APTM120UM70D-AlN APTM120UM70D | |
N mosfet 100v 600A
Abstract: APTM10UM01FA DS66
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APTM10UM01FA APTM10UM01FA N mosfet 100v 600A APTM10UM01FA DS66 | |
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APTGT150TA60PContextual Info: APTGT150TA60P Triple phase leg Trench + Field Stop IGBT Power Module VBUS2 VBUS3 G1 G3 G5 E1 U G2 E2 0/VBUS1 E3 V U W G6 E4 E6 0/VBUS2 0/VBUS3 VBUS 2 G1 0/VBUS 1 E5 G4 VBUS 1 E1 VBUS 3 G3 0/VBUS 2 E3 G5 0/VBUS 3 E2 E4 E6 G4 G6 V W Features • Trench + Field Stop IGBT® Technology |
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APTGT150TA60P APTGT150TA60P | |
SO 227 Package
Abstract: RY 227 ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES apt 2100
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APT2X100D120J APT2X100D120J APT2X101D120J APT2X101D120J OT-227 APT2X100/2X101D120J SO 227 Package RY 227 ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES apt 2100 | |
apt 2100Contextual Info: APT30M40LVFR ADVANCED PO W ER Te c h n o l o g y 300V 76A 0.040Q POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT30M40LVFR O-264 apt 2100 | |
APT50M50L2LL
Abstract: APT2X100D40J APT2X101D40J H100
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APT2X101D40J APT2X100D40J OT-227 APT50M50L2LL APT2X100D40J APT2X101D40J H100 | |
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Contextual Info: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X100D40J APT2X101D40J 27 2 T- SO APT2X101D40J APT2X100D40J 400V 100A 400V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode |
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APT2X101D40J APT2X100D40J OT-227 | |
rnq ah-16Contextual Info: • R A dvanced W .\A APT30M40LVR pow er Te c h n o l o g y “ 300V 76a 0.040q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT30M40LVR O-264 APT30M40LVR rnq ah-16 | |
APT30M40Contextual Info: APT30M40LVR 76A 0.040Ω 300V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. |
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APT30M40LVR O-264 O-264 APT30M40LVR APT30M40 | |
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Contextual Info: APT30M40JVR 70A 0.040Ω 300V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT30M40JVR OT-227 E145592 | |
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Contextual Info: APT30M40B2VR APT30M40LVR 300V 76A 0.040W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® |
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APT30M40B2VR APT30M40LVR O-264 APT30M40 O-247 | |
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Contextual Info: APT25GP90BDQ1 G 900V TYPICAL PERFORMANCE CURVES APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching |
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APT25GP90BDQ1 APT25GP90BDQ1 APT25GP90BDQ1G* | |