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    apm33

    Abstract: c245
    Contextual Info: APM3301QA Dual N-Channel Enhancement Mode MOSFET Features • Pin Description 6 (5) (7) (8) D1D2D2 D1 30V/7.5A, RDS(ON) =24mΩ(Typ.) @ VGS = 10V G2 (4) S2 G1 (3) S1 (2) (1) RDS(ON) =30mΩ(Typ.) @ VGS = 4.5V • Super High Dense Cell Design • Reliable and Rugged


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    APM3301QA APM3301 JESD-22, apm33 c245 PDF