APEC 2050 Search Results
APEC 2050 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 10118615-205004LF |
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BergStik®, Board to Board connector, Unshrouded vertical header ,Through Hole ,Single row , 5 Positions ,2.54mm (0.100in) Pitch. | |||
| 59202-F32-05-084LF |
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Minitek® 2.00mm, Board To Board, Unshrouded Vertical Header, Surface Mount, Double Row, 10 Positions. | |||
| 59202-T22-05-044LF |
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Minitek® 2.00mm, Board To Board, Unshrouded Vertical Header, Surface Mount, Double Row, 10 Positions. | |||
| 54111-409082050LF |
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BergStik® 2.54mm, Board To Board Connector, Unshrouded vertical stacked header, Through Hole, Single Row, 8 Positions, 2.54mm (0.100in) Pitch. | |||
| 20021832-05060C4LF |
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Minitek127®, Board to Board Stacking Header , Surface Mount, Double Row, 60 positions, 1.27mm (0.500in) pitch. |
APEC 2050 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: AP9U18GH RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Low On-resistance Low Gate Voltage Drive ID G 20V 14m 37A S Description The Advanced Power MOSFETs from APEC provide the designer with |
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AP9U18GH O-252 O-252 9U18GH | |
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Contextual Info: AP9U18GH RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low On-resistance ▼ Low Gate Voltage Drive BVDSS 20V RDS ON 14mΩ ID G 37A S Description The Advanced Power MOSFETs from APEC provide the designer with |
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AP9U18GH O-252 O-252 9U18GH | |
Apec 2050Contextual Info: AP9410AGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching Characteristic BVDSS RDS ON ID D D D D 30V 5.5m 18A G RoHS Compliant & Halogen-Free SO-8 S |
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AP9410AGM-HF 100us Apec 2050 | |
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Contextual Info: AP9410AGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic BVDSS RDS ON ID D D D D 30V 5.5mΩ 18A G ▼ RoHS Compliant & Halogen-Free |
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AP9410AGM-HF 100us 100ms | |
EPC8004Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been |
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AN015 EPC8000 ATS-54150K-C2-R0 EPC8004 | |
PD432206
Abstract: powerex igbt six pack igbt module testing SCR 2000V 1000A CM400DU-24NFH ND411635 CM150DU-24NFH MIL-STD-1189 pwm INVERTER welder CM400DU-12NFH
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30kHz PD432206 powerex igbt six pack igbt module testing SCR 2000V 1000A CM400DU-24NFH ND411635 CM150DU-24NFH MIL-STD-1189 pwm INVERTER welder CM400DU-12NFH | |
SLOA103
Abstract: TPA200X bruce carsten d 7377 circuit diagram electronic choke for tube light d 7377 amplifier IC 7377 pin diagram Snubber circuits theory, design and application CISPR22 T-20
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SLOA103 TPA300x TPA200x bruce carsten d 7377 circuit diagram electronic choke for tube light d 7377 amplifier IC 7377 pin diagram Snubber circuits theory, design and application CISPR22 T-20 | |
V850E2
Abstract: TSG20 v850E2M architecture Users Manual v850e2/dx4
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V850E2/Px4 R01UH0098EJ0100 V850E2 TSG20 v850E2M architecture Users Manual v850e2/dx4 |