AP9A102B Search Results

Contextual Info: Creation Date: July 29, 1998 Revision Date: October 6, 1998 Kptos _" s e m ic o n d u c t o r AP9A102B/AP9A102BL PRELIMINARY 5V, 256K x 4 Very High -Speed, Low-Power CMOS Static RAM with Optional 2V Data Retention highly reliable process, coupled with innovative circuit design

Contextual Info: Creation Date: April 9,1996 Revision Date: June 7,1996 ptos • semiconductor AP9A102B PRELIMINARY 256K x 4 High Speed CMOS Static RAM Features • • • • • • • • • Fast access times: 12, 15, 20 ns Fast output enable tpoE f°r cache applications

PIN CONFIGURATION IC RT 3060

Abstract: 06L09 32m25 Paver Components
Contextual Info: ^•îeauun u a ic. re u iu a iy i y y n Revision: June 6, 1996 K lptos AP32M256 I SEMICONDUCTOR 256K x 32 Static RAM Module Features • High-density, 8-megabit, asynchronous Static RAM • Low profile SIMM or ZIP package and 72-Pin Gold SIMM package • High-speed, -15, -20 and -25 ns